Patents by Inventor Brandon Chalifoux

Brandon Chalifoux has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Stress patterning systems and methods for manufacturing free-form deformations in thin substrates
    Patent number: 11879170
    Abstract: A device includes a substrate and a stressed layer disposed on a first surface of the substrate. The stressed layer includes: a first set of patterns having a predetermined geometry, size, and arrangement selected to control an equibiaxial stress field of the stressed layer, wherein the equibiaxial stress field varies in magnitude over the first surface of the substrate, and a second set of patterns etched into the first set of patterns and the substrate, the second set of patterns comprising a plurality of substantially parallel lines arranged to control at least a uniaxial stress field of the stressed layer, wherein the uniaxial stress field varies in magnitude over the first surface of the substrate.
    Type: Grant
    Filed: August 14, 2020
    Date of Patent: January 23, 2024
    Assignee: Massachusetts Institute of Technology
    Inventors: Youwei Yao, Brandon Chalifoux, Mark Schattenburg
  • STRESS PATTERNING SYSTEMS AND METHODS FOR MANUFACTURING FREE-FORM DEFORMATIONS IN THIN SUBSTRATES
    Publication number: 20210047729
    Abstract: A device includes a substrate and a stressed layer disposed on a first surface of the substrate. The stressed layer includes: a first set of patterns having a predetermined geometry, size, and arrangement selected to control an equibiaxial stress field of the stressed layer, wherein the equibiaxial stress field varies in magnitude over the first surface of the substrate, and a second set of patterns etched into the first set of patterns and the substrate, the second set of patterns comprising a plurality of substantially parallel lines arranged to control at least a uniaxial stress field of the stressed layer, wherein the uniaxial stress field varies in magnitude over the first surface of the substrate.
    Type: Application
    Filed: August 14, 2020
    Publication date: February 18, 2021
    Inventors: Youwei Yao, Brandon Chalifoux, Mark Schattenburg