Abstract: An apparatus, system, and method are disclosed for data block usage information synchronization for a non-volatile storage volume. The method includes referencing first data block usage information for data blocks of a non-volatile storage volume managed by a storage manager. The first data block usage information is maintained by the storage manager. The method also includes synchronizing second data block usage information managed by a storage controller with the first data block usage information maintained by the storage manager. The storage manager maintains the first data block usage information separate from second data block usage information managed by the storage controller.

Abstract: An apparatus, system, and method are disclosed for data block usage information synchronization for a non-volatile storage volume. The method includes referencing first data block usage information for data blocks of a non-volatile storage volume managed by a storage manager. The first data block usage information is maintained by the storage manager. The method also includes synchronizing second data block usage information managed by a storage controller with the first data block usage information maintained by the storage manager. The storage manager maintains the first data block usage information separate from second data block usage information managed by the storage controller.

Abstract: An apparatus, system, and method are disclosed for data block usage information synchronization for a non-volatile storage volume. The method includes referencing first data block usage information for data blocks of a non-volatile storage volume managed by a storage manager. The first data block usage information is maintained by the storage manager. The method also includes synchronizing second data block usage information managed by a storage controller with the first data block usage information maintained by the storage manager. The storage manager maintains the first data block usage information separate from second data block usage information managed by the storage controller.

Abstract: An apparatus, system, and method are disclosed for data block usage information synchronization for a non-volatile storage volume. The method includes referencing first data block usage information for data blocks of a non-volatile storage volume managed by a storage manager. The first data block usage information is maintained by the storage manager. The method also includes synchronizing second data block usage information managed by a storage controller with the first data block usage information maintained by the storage manager. The storage manager maintains the first data block usage information separate from second data block usage information managed by the storage controller.

Abstract: An apparatus, system, and method are disclosed for data block usage information synchronization for a non-volatile storage volume. The method includes referencing first data block usage information for data blocks of a non-volatile storage volume managed by a storage manager. The first data block usage information is maintained by the storage manager. The method also includes synchronizing second data block usage information managed by a storage controller with the first data block usage information maintained by the storage manager. The storage manager maintains the first data block usage information separate from second data block usage information managed by the storage controller.

Abstract: A method and system for treating a dielectric film includes exposing at least one surface of the dielectric film to an alkyl silane, an alkoxysilane, an alkyl siloxane, an alkoxysiloxane, an aryl silane, an acyl silane, a cyclo siloxane, a polysilsesquioxane (PSS), an aryl siloxane, an acyl siloxane, or a halo siloxane, or any combination thereof. The dielectric film can include a low dielectric constant film with or without pores having an etch feature formed therein following dry etch processing. As a result of the etch processing or ashing, exposed surfaces in the feature formed in the dielectric film can become damaged, or activated, leading to retention of contaminants, absorption of moisture, increase in dielectric constant, etc. Damaged surfaces, such as these, are treated by performing at least one of healing these surfaces to, for example, restore the dielectric constant (i.e., decrease the dielectric constant) and cleaning these surfaces to remove contaminants, moisture, or residue.

Abstract: A method and system for treating a dielectric film includes exposing at least one surface of the dielectric film to an alkyl silane, an alkoxysilane, an alkyl siloxane, an alkoxysiloxane, an aryl silane, an acyl silane, a cyclo siloxane, a polysilsesquioxane (PSS), an aryl siloxane, an acyl siloxane, or a halo siloxane, or any combination thereof. The dielectric film can include a low dielectric constant film with or without pores having an etch feature formed therein following dry etch processing. As a result of the etch processing or ashing, exposed surfaces in the feature formed in the dielectric film can become damaged, or activated, leading to retention of contaminants, absorption of moisture, increase in dielectric constant, etc. Damaged surfaces, such as these, are treated by performing at least one of healing these surfaces to, for example, restore the dielectric constant (i.e., decrease the dielectric constant) and cleaning these surfaces to remove contaminants, moisture, or residue.

Abstract: A method and system is described for treating a substrate with a high pressure fluid, such as carbon dioxide in a supercritical state. A process chemistry is introduced to the high pressure fluid for treating the substrate surface. The process chemistry comprises fluorosilicic acid.

Abstract: A method and system is described for treating a substrate with a high pressure fluid, such as carbon dioxide in a supercritical state. A process chemistry is introduced to the high pressure fluid for treating the substrate surface. The process chemistry comprises fluorosilicic acid.

Abstract: A method and system is described for treating a substrate with a high pressure fluid, such as carbon dioxide in a supercritical state. A process chemistry is introduced to the high pressure fluid for treating the substrate surface. The process chemistry includes a peroxide-based chemistry.

Abstract: A method and system is described for treating a substrate with a supercritical fluid using a high temperature process. For example, when the supercritical fluid includes carbon dioxide in a supercritical state, the high temperature process is performed at temperature approximately equal to and exceeding 80° C., which is greater than the critical temperature of approximately 31 ° C.

Abstract: A method and system for treating a dielectric film includes exposing at least one surface of the dielectric film to an alkyl silane, an alkoxysilane, an alkyl siloxane, an alkoxysiloxane, an aryl silane, an acyl silane, a cyclo siloxane, a polysilsesquioxane (PSS), an aryl siloxane, an acyl siloxane, or a halo siloxane, or any combination thereof. The dielectric film can include a low dielectric constant film with or without pores having an etch feature formed therein following dry etch processing. As a result of the etch processing or ashing, exposed surfaces in the feature formed in the dielectric film can become damaged, or activated, leading to retention of contaminants, absorption of moisture, increase in dielectric constant, etc. Damaged surfaces, such as these, are treated by performing at least one of healing these surfaces to, for example, restore the dielectric constant (i.e., decrease the dielectric constant) and cleaning these surfaces to remove contaminants, moisture, or residue.