Patents by Inventor Brandon KWON

Brandon KWON has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9384854
    Abstract: A Complementary Metal-Oxide-Semiconductor (CMOS) analog switch has a circuit structure such that when a supply voltage is applied, the CMOS analog switch biases voltages at both ends of a Metal-Oxide-Semiconductor Field Effect Transistor (MOS) device, which switches on upon application of supply voltage, to a substrate node of MOS, or biases the substrate voltage of MOS device to a ground voltage state during a switching-off operation. The substrate voltage of MOS device in floating state is still biased to the ground voltage state even when abnormal, high voltages are applied to both ends of the MOS device. As a result, threshold voltage and conduction resistance decrease compared to related analog switches, and frequency bandwidth increases.
    Type: Grant
    Filed: May 14, 2014
    Date of Patent: July 5, 2016
    Assignee: Magnachip Semiconductor, Ltd.
    Inventors: Brandon Kwon, Jung Hoon Sul
  • Patent number: 9024675
    Abstract: There is provided a multi power supply type level shifter. The provided multi power supply type level shifter includes a first level shifter and a second level shifter in a two-stage architecture so as to selectively receive first to third power supplies and change a signal level, even when the first to third power supplies are applied in a different sequence from a normal power-on sequence. Output voltages are output without a change in level, and short-circuit currents are not generated in the first and second level shifters.
    Type: Grant
    Filed: March 24, 2014
    Date of Patent: May 5, 2015
    Assignee: MagnaChip Semiconductor, Ltd.
    Inventors: Jung Hoon Sul, Brandon Kwon
  • Publication number: 20150008978
    Abstract: A Complementary Metal-Oxide-Semiconductor (CMOS) analog switch has a circuit structure such that when a supply voltage is applied, the CMOS analog switch biases voltages at both ends of a Metal-Oxide-Semiconductor Field Effect Transistor (MOS) device, which switches on upon application of supply voltage, to a substrate node of MOS, or biases the substrate voltage of MOS device to a ground voltage state during a switching-off operation. The substrate voltage of MOS device in floating state is still biased to the ground voltage state even when abnormal, high voltages are applied to both ends of the MOS device. As a result, threshold voltage and conduction resistance decrease compared to related analog switches, and frequency bandwidth increases.
    Type: Application
    Filed: May 14, 2014
    Publication date: January 8, 2015
    Applicant: MagnaChip Semiconductor, Ltd.
    Inventors: Brandon KWON, Jung Hoon SUL
  • Publication number: 20140375373
    Abstract: There is provided a multi power supply type level shifter. The provided multi power supply type level shifter includes a first level shifter and a second level shifter in a two-stage architecture so as to selectively receive first to third power supplies and change a signal level, even when the first to third power supplies are applied in a different sequence from a normal power-on sequence. Output voltages are output without a change in level, and short-circuit currents are not generated in the first and second level shifters.
    Type: Application
    Filed: March 24, 2014
    Publication date: December 25, 2014
    Applicant: MAGNACHIP SEMICONDUCTOR, LTD.
    Inventors: Jung Hoon SUL, Brandon KWON