Patents by Inventor Brant S. Binns

Brant S. Binns has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210296146
    Abstract: A cassette with embedded temperature sensors that is disposed within a load lock is disclosed. The temperature sensors may be disposed in a plurality of shelves of the load lock cassette to monitor the temperature of each of a plurality of workpieces disposed in the load lock. The output of these temperature sensors may be provided to a controller, which controls when the load lock is opened. The load lock cassette may also include cooling channels to accelerate the cooling of the workpieces to improve throughput. The cooling may be controlled using closed loop control, where a controller monitors the temperature of the workpieces during the cooling operation.
    Type: Application
    Filed: March 23, 2020
    Publication date: September 23, 2021
    Inventors: Michael Blanchard, Steven M. Anella, Brant S. Binns, Jordan B. Tye, D. Jeffrey Lischer
  • Patent number: 10410844
    Abstract: Provided herein are approaches for in-situ plasma cleaning of one or more components of an ion implantation system. In one approach, the component may include a beam-line component, such as an energy purity module, having a plurality of conductive beam optics contained therein. The system further includes a power supply system for supplying a voltage and a current to the beam-line component during a cleaning mode, wherein the power supply system may include a first power plug coupled to a first subset of the plurality of conductive beam optics and a second power plug coupled to a second subset of the plurality of conductive beam optics. During a cleaning mode, the voltage and current may be simultaneously supplied and split between each of the first and second power plugs.
    Type: Grant
    Filed: February 8, 2017
    Date of Patent: September 10, 2019
    Assignee: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Kevin Anglin, Brant S. Binns, Peter F. Kurunczi, Jay T. Scheuer, Eric Hermanson, Alexandre Likhanskii
  • Patent number: 10262833
    Abstract: An ion source with improved temperature control is disclosed. A portion of the ion source is nestled within a recessed cavity in a heat sink, where the portion of the ion source and the recessed cavity are each shaped so that expansion of the ion source causes high pressure thermal contact with the heat sink. For example, the ion source may have a tapered cylindrical end, which fits within a recessed cavity in the heat sink. Thermal expansion of the ion source causes the tapered cylindrical end to press against the recessed cavity in the heat sink. By proper selection of the temperature of the heat sink, the temperature and flow of coolant fluid through the heat sink, and the size of the gap between the heat sink and the ion source, the temperature of the ion source can be controlled.
    Type: Grant
    Filed: November 27, 2017
    Date of Patent: April 16, 2019
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Scott C. Holden, Bon-Woong Koo, Brant S. Binns, Richard M. White, Kenneth L. Starks, Eric R. Cobb
  • Publication number: 20180166261
    Abstract: Provided herein are approaches for in-situ plasma cleaning of one or more components of an ion implantation system. In one approach, the component may include a beam-line component, such as an energy purity module, having a plurality of conductive beam optics contained therein. The system further includes a power supply system for supplying a voltage and a current to the beam-line component during a cleaning mode, wherein the power supply system may include a first power plug coupled to a first subset of the plurality of conductive beam optics and a second power plug coupled to a second subset of the plurality of conductive beam optics. During a cleaning mode, the voltage and current may be simultaneously supplied and split between each of the first and second power plugs.
    Type: Application
    Filed: February 8, 2017
    Publication date: June 14, 2018
    Inventors: Kevin Anglin, Brant S. Binns, Peter F. Kurunczi, Jay T. Scheuer, Eric Hermanson, Alexandre Likhanskii
  • Publication number: 20180090297
    Abstract: An ion source with improved temperature control is disclosed. A portion of the ion source is nestled within a recessed cavity in a heat sink, where the portion of the ion source and the recessed cavity are each shaped so that expansion of the ion source causes high pressure thermal contact with the heat sink. For example, the ion source may have a tapered cylindrical end, which fits within a recessed cavity in the heat sink. Thermal expansion of the ion source causes the tapered cylindrical end to press against the recessed cavity in the heat sink. By proper selection of the temperature of the heat sink, the temperature and flow of coolant fluid through the heat sink, and the size of the gap between the heat sink and the ion source, the temperature of the ion source can be controlled.
    Type: Application
    Filed: November 27, 2017
    Publication date: March 29, 2018
    Inventors: Scott C. Holden, Bon-Woong Koo, Brant S. Binns, Richard M. White, Kenneth L. Starks, Eric R. Cobb
  • Patent number: 9859098
    Abstract: An ion source with improved temperature control is disclosed. A portion of the ion source is nestled within a recessed cavity in a heat sink, where the portion of the ion source and the recessed cavity are each shaped so that expansion of the ion source causes high pressure thermal contact with the heat sink. For example, the ion source may have a tapered cylindrical end, which fits within a recessed cavity in the heat sink. Thermal expansion of the ion source causes the tapered cylindrical end to press against the recessed cavity in the heat sink. By proper selection of the temperature of the heat sink, the temperature and flow of coolant fluid through the heat sink, and the size of the gap between the heat sink and the ion source, the temperature of the ion source can be controlled.
    Type: Grant
    Filed: December 22, 2015
    Date of Patent: January 2, 2018
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Scott C. Holden, Bon-Woong Koo, Brant S. Binns, Richard M. White, Kenneth L. Starks, Eric R. Cobb
  • Publication number: 20170178857
    Abstract: An ion source with improved temperature control is disclosed. A portion of the ion source is nestled within a recessed cavity in a heat sink, where the portion of the ion source and the recessed cavity are each shaped so that expansion of the ion source causes high pressure thermal contact with the heat sink. For example, the ion source may have a tapered cylindrical end, which fits within a recessed cavity in the heat sink. Thermal expansion of the ion source causes the tapered cylindrical end to press against the recessed cavity in the heat sink. By proper selection of the temperature of the heat sink, the temperature and flow of coolant fluid through the heat sink, and the size of the gap between the heat sink and the ion source, the temperature of the ion source can be controlled.
    Type: Application
    Filed: December 22, 2015
    Publication date: June 22, 2017
    Inventors: Scott C. Holden, Bon-Woong Koo, Brant S. Binns, Richard M. White, Kenneth L. Starks, Eric R. Cobb
  • Patent number: 9062377
    Abstract: Methods of reducing glitch rates within an ion implanter are described. In one embodiment, a plasma-assisted conditioning is performed, wherein the bias voltage to the extraction electrodes is modified so as to inhibit the formation of an ion beam. The power supplied to the plasma generator in the ion source is increased, thereby creating a high density plasma, which is not extracted by the extraction electrodes. This plasma extends from the ion source chamber through the extraction aperture. Energetic ions then condition the extraction electrodes. In another embodiment, a plasma-assisted cleaning is performed. In this mode, the extraction electrodes are moved further from the ion source chamber, and a different source gas is used to create the plasma. In some embodiments, a combination of these modes is used to reduce glitches in the ion implanter.
    Type: Grant
    Filed: September 23, 2013
    Date of Patent: June 23, 2015
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: William T. Levay, George M. Gammel, Bon-Woong Koo, Brant S. Binns, Richard M. White
  • Publication number: 20140127394
    Abstract: Methods of reducing glitch rates within an ion implanter are described. In one embodiment, a plasma-assisted conditioning is performed, wherein the bias voltage to the extraction electrodes is modified so as to inhibit the formation of an ion beam. The power supplied to the plasma generator in the ion source is increased, thereby creating a high density plasma, which is not extracted by the extraction electrodes. This plasma extends from the arc chamber through the extraction aperture. Energetic ions then condition the extraction electrodes. In another embodiment, a plasma-assisted cleaning is performed. In this mode, the extraction voltage applied to the arc chamber body is modulated between two voltages so as to clean both the extraction electrodes and the faceplate of the arc chamber body.
    Type: Application
    Filed: October 25, 2013
    Publication date: May 8, 2014
    Inventors: George M. Gammel, Brant S. Binns, Piotr R. Lubicki, Bon-Woong Koo, Richard M. White, Kevin M. Daniels
  • Publication number: 20140099430
    Abstract: Methods of reducing glitch rates within an ion implanter are described. In one embodiment, a plasma-assisted conditioning is performed, wherein the bias voltage to the extraction electrodes is modified so as to inhibit the formation of an ion beam. The power supplied to the plasma generator in the ion source is increased, thereby creating a high density plasma, which is not extracted by the extraction electrodes. This plasma extends from the ion source chamber through the extraction aperture. Energetic ions then condition the extraction electrodes. In another embodiment, a plasma-assisted cleaning is performed. In this mode, the extraction electrodes are moved further from the ion source chamber, and a different source gas is used to create the plasma. In some embodiments, a combination of these modes is used to reduce glitches in the ion implanter.
    Type: Application
    Filed: September 23, 2013
    Publication date: April 10, 2014
    Inventors: William T. Levay, George M. Gammel, Bon-Woong Koo, Brant S. Binns, Richard M. White
  • Patent number: 7675048
    Abstract: A wafer handling robot, ion implanter system including a wafer handling robot and a related method are disclosed. An ion implanter system may include an ion implanting station including a load lock coupled thereto; a wafer handling robot located at least partially within the load lock, the wafer handling robot including an end effecter for handling at least one wafer, and a motor for moving the end effecter vertically; and a sensor positioned within the load lock to determine a vertical position of the end effecter.
    Type: Grant
    Filed: March 6, 2007
    Date of Patent: March 9, 2010
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Brant S. Binns, Kevin Daniels, Robert A. Poltras
  • Publication number: 20080218772
    Abstract: A wafer handling robot, ion implanter system including a wafer handling robot and a related method are disclosed. An ion implanter system may include an ion implanting station including a load lock coupled thereto; a wafer handling robot located at least partially within the load lock, the wafer handling robot including an end effecter for handling at least one wafer, and a motor for moving the end effecter vertically; and a sensor positioned within the load lock to determine a vertical position of the end effecter.
    Type: Application
    Filed: March 6, 2007
    Publication date: September 11, 2008
    Inventors: Brant S. Binns, Kevin Daniels, Robert A. Poltras