Abstract: A method of manufacturing a micro-light-emitting diode display includes processing a wafer to form a plurality of functional chips integral with the wafer. A plurality of wafer tiles is defined in the wafer, wherein each wafer tile is composed of a cluster of functional chips. The wafer tiles are singulated by wafer dicing. A plurality of separate wafer tiles is bonded to a semiconductor wafer by hybrid bonding. The functional chips are singulated together with chips of the semiconductor wafer by dicing the bonded-together wafer tiles and semiconductor wafer.

Abstract: In an embodiment a semiconductor chip includes a semiconductor body having a first region, a second region, and an active region between the first region and the second region, indentations in the first region, a TCO material in the indentations and a carrier, wherein the indentations of the first region are arranged on a side of the first region facing away from the carrier, and wherein the TCO material is flush with a surface of the first region facing away from the active region.

Abstract: A method for producing a radiation emitting semiconductor chip may include providing a semiconductor layer sequence having an active region configured to generate electromagnetic radiation, applying a reflective layer sequence over the semiconductor layer sequence, generating a first recess through an opening of a mask where the first recess completely penetrates the reflective layer sequence and the active region, and applying a dielectric mirror layer in the first recess through the same opening of the same mask. Furthermore, a radiation emitting semiconductor chip is disclosed.

Abstract: A display apparatus includes a multiplicity of picture elements for emitting visible light in different colors in an adjustable manner by means of a plurality of semiconductor layer sequences. Each of the picture elements has a plurality of types of pixels and each type of pixels is configured for emitting light of a specific color. The pixels are each subdivided into a plurality of sub-pixel. All the sub-pixels are configured for emitting light of the same color out of the display apparatus without further color change. At least two sub-pixels within each pixel have emission areas of different sizes. An electrical control unit is assigned to each pixel. The control units are each configured to automatically control the sub-pixels of a relevant pixel depending on an energization intensity in such a way that a light-emitting area of the relevant pixel increases in stepped fashion with the energization intensity.

Abstract: In an embodiment a semiconductor chip includes a semiconductor body having a first region, a second region, and an active region between the first region and the second region, indentations in the first region, a TCO material in the indentations and a carrier, wherein the indentations of the first region are arranged on a side of the first region facing away from the carrier, and wherein the TCO material is flush with a surface of the first region facing away from the active region.

Abstract: A display apparatus includes a multiplicity of picture elements for emitting visible light in different colors in an adjustable manner by means of a plurality of semiconductor layer sequences. Each of the picture elements has a plurality of types of pixels and each type of pixels is configured for emitting light of a specific color. The pixels are each subdivided into a plurality of sub-pixel. All the sub-pixels are configured for emitting light of the same color out of the display apparatus without further color change. At least two sub-pixels within each pixel have emission areas of different sizes. An electrical control unit is assigned to each pixel. The control units are each configured to automatically control the sub-pixels of a relevant pixel depending on an energization intensity in such a way that a light-emitting area of the relevant pixel increases in stepped fashion with the energization intensity.

Abstract: An optoelectronic component is specified comprising: at least one radiation-emitting semiconductor chip (1) which during operation emits electromagnetic radiation of a first wavelength range, and an absorber, wherein the absorber is predominantly transmissive to the emitted electromagnetic radiation of the first wavelength range, and the absorber absorbs at least 70% of the total radiation intensity of the electromagnetic spectrum of the visible light of the ambient light.

Abstract: A method for producing a radiation emitting semiconductor chip may include providing a semiconductor layer sequence having an active region configured to generate electromagnetic radiation, applying a reflective layer sequence over the semiconductor layer sequence, generating a first recess through an opening of a mask where the first recess completely penetrates the reflective layer sequence and the active region, and applying a dielectric mirror layer in the first recess through the same opening of the same mask. Furthermore, a radiation emitting semiconductor chip is disclosed.

Abstract: A method of manufacturing a micro-light-emitting diode display includes processing a wafer to form a plurality of functional chips integral with the wafer. A plurality of wafer tiles is defined in the wafer, wherein each wafer tile is composed of a cluster of functional chips. The wafer tiles are singulated by wafer dicing. A plurality of separate wafer tiles is bonded to a semiconductor wafer by hybrid bonding. The functional chips are singulated together with chips of the semiconductor wafer by dicing the bonded-together wafer tiles and semiconductor wafer.

Abstract: An optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor component are disclosed. In an embodiment an optoelectronic semiconductor component includes a semiconductor layer sequence having a first region of a first conductivity type, a reflection layer, a passivation layer arranged between the semiconductor layer sequence and the reflection layer, a first barrier layer arranged between the first region of the semiconductor layer sequence and the passivation layer and a second barrier layer arranged between the passivation layer and the reflection layer, wherein the first barrier layer is configured to reduce or prevent diffusion of contaminants from the passivation layer into the semiconductor layer sequence, and wherein the second barrier layer is configured to reduce or prevent diffusion of contaminants from the passivation layer into the reflection layer.

Abstract: An optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor component are disclosed. In an embodiment an optoelectronic semiconductor component includes a semiconductor layer sequence having a first region of a first conductivity type, a reflection layer, a passivation layer arranged between the semiconductor layer sequence and the reflection layer, a first barrier layer arranged between the first region of the semiconductor layer sequence and the passivation layer and a second barrier layer arranged between the passivation layer and the reflection layer, wherein the first barrier layer is configured to reduce or prevent diffusion of contaminants from the passivation layer into the semiconductor layer sequence, and wherein the second barrier layer is configured to reduce or prevent diffusion of contaminants from the passivation layer into the reflection layer.

Abstract: A method for producing an electrical contact on a semiconductor layer and a semiconductor component having an electrical contact are disclosed. In an embodiment a method includes providing a semiconductor layer, forming a plurality of contact rods on the semiconductor layer, wherein the contact rods are formed by a first material and a second material, wherein the first material is applied to the semiconductor layer and the second material is applied to the first material, and wherein a lateral structure of the first material is self-organized, forming a filling layer on the contact rods and in intermediate spaces between the contact rods and exposing the contact rods.

Abstract: A method for producing an electrical contact on a semiconductor layer and a semiconductor component having an electrical contact are disclosed. In an embodiment a method includes providing a semiconductor layer, forming a plurality of contact rods on the semiconductor layer, wherein the contact rods are formed by a first material and a second material, wherein the first material is applied to the semiconductor layer and the second material is applied to the first material, and wherein a lateral structure of the first material is self-organized, forming a filling layer on the contact rods and in intermediate spaces between the contact rods and exposing the contact rods.

Abstract: A method of processing a lead frame having at least one electrically conductive contact section includes forming a depression in the at least one electrically conductive contact section so that a first electrically conductive contact subsection and a second electrically conductive contact subsection are formed, which are delimited from one another by the depression, and forming a housing made of a housing material, which housing includes a housing frame that at least partially embeds the lead frame, formation of the housing including introduction of housing material into the depression so that a housing frame section formed by the housing material introduced into the depression is formed between the first and second electrically conductive contact subsections to mechanically stabilize the first and second electrical conductive contact subsections by the housing frame section.

Abstract: A method of processing a lead frame having at least one electrically conductive contact section includes forming a depression in the at least one electrically conductive contact section so that a first electrically conductive contact subsection and a second electrically conductive contact subsection are formed, which are delimited from one another by the depression, and forming a housing made of a housing material, which housing includes a housing frame that at least partially embeds the lead frame, formation of the housing including introduction of housing material into the depression so that a housing frame section formed by the housing material introduced into the depression is formed between the first and second electrically conductive contact subsections to mechanically stabilize the first and second electrical conductive contact subsections by the housing frame section.