Patents by Inventor Brendan Lafferty

Brendan Lafferty has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11588302
    Abstract: Exemplary methods and apparatus may provide optical gates and optical switches using such optical gates. Each optical gate may include a semiconductor optical amplifier that is placed in a substrate. The semiconductor optical amplifier may be coupled to input and output couplers to receive and selectively output optical signals into and out of the substrate.
    Type: Grant
    Filed: June 21, 2019
    Date of Patent: February 21, 2023
    Assignee: Seagate Technology LLC
    Inventors: Mark A. Gubbins, Marcus B. Mooney, Aidan D. Goggin, Paula F. McElhinney, Debra A. McNeill, Fadi El Hallak, Brendan Lafferty
  • Patent number: 10895684
    Abstract: A method, and apparatus provided thereby, includes providing a substrate and placing an integrated laser on the substrate. A first cladding layer surrounds the integrated laser and includes a laser optical coupler aligned with an output of the laser. The laser optical coupler includes silicon and the laser includes a III-V compound semiconductor. The output of the laser is spaced apart from the laser optical coupler by a gap of less than or equal to 500 nanometers. An optical waveguide is positioned on the first cladding layer and in optical communication with the laser optical coupler.
    Type: Grant
    Filed: June 21, 2019
    Date of Patent: January 19, 2021
    Assignee: Seagate Technology LLC
    Inventors: Mark A. Gubbins, Richard C. A. Pitwon, Aidan D. Goggin, Marcus B. Mooney, Reyad Mehfuz, Fadi El Hallak, Paula F. McElhinney, Brendan Lafferty, Kelly E. Callan
  • Publication number: 20200400884
    Abstract: A method, and apparatus provided thereby, includes providing a substrate and placing an integrated laser on the substrate. A first cladding layer surrounds the integrated laser and includes a laser optical coupler aligned with an output of the laser. The laser optical coupler includes silicon and the laser includes a III-V compound semiconductor. The output of the laser is spaced apart from the laser optical coupler by a gap of less than or equal to 500 nanometers. An optical waveguide is positioned on the first cladding layer and in optical communication with the laser optical coupler.
    Type: Application
    Filed: June 21, 2019
    Publication date: December 24, 2020
    Inventors: Mark A. Gubbins, Richard C.A. Pitwon, Aidan D. Goggin, Marcus B. Mooney, Reyad Mehfuz, Fadi El Hallak, Paula F. McElhinney, Brendan Lafferty, Kelly E. Callan
  • Publication number: 20200403384
    Abstract: Exemplary methods and apparatus may provide optical gates and optical switches using such optical gates. Each optical gate may include a semiconductor optical amplifier that is placed in a substrate. The semiconductor optical amplifier may be coupled to input and output couplers to receive and selectively output optical signals into and out of the substrate.
    Type: Application
    Filed: June 21, 2019
    Publication date: December 24, 2020
    Inventors: Mark A. Gubbins, Marcus B. Mooney, Aidan D. Goggin, Paula F. McElhinney, Debra A. McNeill, Fadi El Hallak, Brendan Lafferty
  • Publication number: 20110243176
    Abstract: A method of producing a slider wafer populated with electromagnetic components optically aligned with photonic elements for HAMR applications. Laser chips are transferred from a laser substrate wafer to the slider wafer by a massively parallel printing transfer process. After wafer bonding the laser chips to the slider wafer, the shape and optical alignment of the photonic elements are precisely aligned en masse by lithographic processing.
    Type: Application
    Filed: March 31, 2010
    Publication date: October 6, 2011
    Applicant: SEAGATE TECHNOLOGY LLC
    Inventors: Marcus B. Mooney, Mark Gubbins, Brendan Lafferty, Alin Fecioru
  • Patent number: 8029659
    Abstract: A modification rate at a surface of an anode formed on a substrate is controlled. The anode is connected to a cathode comprised of a material having a higher nobility than the anode. An electrically conductive path is established between the anode and the cathode through an electrolyte to induce formation of an oxide layer at the anode surface that is more resistive to modification than the anode.
    Type: Grant
    Filed: July 19, 2007
    Date of Patent: October 4, 2011
    Assignee: Seagate Techology LLC
    Inventors: Peter K. McGeehin, GE Yi, Andrew B. McInroy, Brendan Lafferty
  • Publication number: 20090020432
    Abstract: A modification rate at a surface of an anode formed on a substrate is controlled. The anode is connected to a cathode comprised of a material having a higher nobility than the anode. An electrically conductive path is established between the anode and the cathode through an electrolyte to induce formation of an oxide layer at the anode surface that is more resistive to modification than the anode.
    Type: Application
    Filed: July 19, 2007
    Publication date: January 22, 2009
    Applicant: Seagate Technology LLC
    Inventors: Peter K. McGeehin, Ge Yi, Andrew B. McInroy, Brendan Lafferty