Patents by Inventor Brendan METZNER
Brendan METZNER has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12176866Abstract: Described are circuits and techniques to increase the efficiency of radio-frequency (rf) amplifiers including rf power amplifiers (PAs) through “supply modulation” (also referred to as “drain modulation” or “collector modulation”), in which supply voltages provided to rf amplifiers is adjusted dynamically (“modulated”) over time depending upon the rf signal being synthesized. For the largest efficiency improvements, a supply voltage can be adjusted among discrete voltage levels or continuously on a short time scale. The supply voltages (or voltage levels) provided to an rf amplifier may also be adapted to accommodate longer-term changes in desired rf envelope such as associated with adapting transmitter output strength to minimize errors in data transfer, for rf “traffic” variations.Type: GrantFiled: July 17, 2023Date of Patent: December 24, 2024Assignee: Murata Manufacturing Co., Ltd.Inventors: James Garrett, Sri Harsh Pakala, Brendan Metzner, Ivan Duzevik, David J. Perreault, John R. Hoversten, Yevgeniy A. Tkachenko
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Patent number: 12176867Abstract: Described are circuits and techniques to increase the efficiency of radio-frequency (rf) amplifiers including rf power amplifiers (PAs) through “supply modulation” (also referred to as “drain modulation” or “collector modulation”), in which supply voltages provided to rf amplifiers is adjusted dynamically (“modulated”) over time depending upon the rf signal being synthesized. For the largest efficiency improvements, a supply voltage can be adjusted among discrete voltage levels or continuously on a short time scale. The supply voltages (or voltage levels) provided to an rf amplifier may also be adapted to accommodate longer-term changes in desired rf envelope such as associated with adapting transmitter output strength to minimize errors in data transfer, for rf “traffic” variations.Type: GrantFiled: July 17, 2023Date of Patent: December 24, 2024Assignee: Murata Manufacturing Co., Ltd.Inventors: James Garrett, Sri Harsh Pakala, Brendan Metzner, Ivan Duzevik, David J. Perreault, John R. Hoversten, Yevgeniy A. Tkachenko
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Patent number: 12160208Abstract: Described are circuits and techniques to increase the efficiency of radio-frequency (rf) amplifiers including rf power amplifiers (PAs) through “supply modulation” (also referred to as “drain modulation” or “collector modulation”), in which supply voltages provided to rf amplifiers is adjusted dynamically (“modulated”) over time depending upon the rf signal being synthesized. For the largest efficiency improvements, a supply voltage can be adjusted among discrete voltage levels or continuously on a short time scale. The supply voltages (or voltage levels) provided to an rf amplifier may also be adapted to accommodate longer-term changes in desired rf envelope such as associated with adapting transmitter output strength to minimize errors in data transfer, for rf “traffic” variations.Type: GrantFiled: January 10, 2022Date of Patent: December 3, 2024Assignee: Murata Manufacturing Co., Ltd.Inventors: James Garrett, Sri Harsh Pakala, Brendan Metzner, Ivan Duzevik, David J. Perreault, John R. Hoversten, Yevgeniy A. Tkachenko
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Patent number: 11949383Abstract: Described are concepts, circuits, systems and techniques directed toward N-phase control techniques useful in the design and control of supply generators configured for use in a wide variety of power management applications including, but not limited to mobile applications.Type: GrantFiled: March 9, 2023Date of Patent: April 2, 2024Assignee: Murata Manufacturing Co., Ltd.Inventors: David J. Perreault, James Garrett, Sri Harsh Pakala, Brendan Metzner, Ivan Duzevik, John R. Hoversten, Yevgeniy A. Tkachenko
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Publication number: 20240080004Abstract: Described are circuits and techniques to increase the efficiency of radio-frequency (rf) amplifiers including rf power amplifiers (PAs) through “supply modulation” (also referred to as “drain modulation” or “collector modulation”), in which supply voltages provided to rf amplifiers is adjusted dynamically (“modulated”) over time depending upon the rf signal being synthesized. For the largest efficiency improvements, a supply voltage can be adjusted among discrete voltage levels or continuously on a short time scale. The supply voltages (or voltage levels) provided to an rf amplifier may also be adapted to accommodate longer-term changes in desired rf envelope such as associated with adapting transmitter output strength to minimize errors in data transfer, for rf “traffic” variations.Type: ApplicationFiled: July 17, 2023Publication date: March 7, 2024Applicant: Murata Manufacturing Co., Ltd.Inventors: James Garrett, Sri Harsh Pakala, Brendan Metzner, Ivan Duzevik, David J. Perreault, John R. Hoversten, Yevgeniy A. Tkachenko
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Publication number: 20230378921Abstract: Described are circuits and techniques to increase the efficiency of radio-frequency (rf) amplifiers including rf power amplifiers (PAs) through “supply modulation” (also referred to as “drain modulation” or “collector modulation”), in which supply voltages provided to rf amplifiers is adjusted dynamically (“modulated”) over time depending upon the rf signal being synthesized. For the largest efficiency improvements, a supply voltage can be adjusted among discrete voltage levels or continuously on a short time scale. The supply voltages (or voltage levels) provided to an rf amplifier may also be adapted to accommodate longer-term changes in desired rf envelope such as associated with adapting transmitter output strength to minimize errors in data transfer, for rf “traffic” variations.Type: ApplicationFiled: July 17, 2023Publication date: November 23, 2023Applicant: Murata Manufacturing Co., Ltd.Inventors: James Garrett, Sri Harsh Pakala, Brendan Metzner, Ivan Duzevik, David J. Perreault, John R. Hoversten, Yevgeniy A. Tkachenko
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Publication number: 20230361730Abstract: Described are circuits and techniques to increase the efficiency of radio-frequency (rf) amplifiers including rf power amplifiers (PAs) through “supply modulation” (also referred to as “drain modulation” or “collector modulation”), in which supply voltages provided to rf amplifiers is adjusted dynamically (“modulated”) over time depending upon the rf signal being synthesized. For the largest efficiency improvements, a supply voltage can be adjusted among discrete voltage levels or continuously on a short time scale. The supply voltages (or voltage levels) provided to an rf amplifier may also be adapted to accommodate longer-term changes in desired rf envelope such as associated with adapting transmitter output strength to minimize errors in data transfer, for rf “traffic” variations.Type: ApplicationFiled: July 17, 2023Publication date: November 9, 2023Applicant: Murata Manufacturing Co., Ltd.Inventors: James Garrett, Sri Harsh Pakala, Brendan Metzner, Ivan Duzevik, David J. Perreault, John R. Hoversten, Yevgeniy A. Tkachenko
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Patent number: 11637531Abstract: Described are concepts, circuits, systems and techniques directed toward N-phase control techniques useful in the design and control of supply generators configured for use in a wide variety of power management applications including, but not limited to mobile applications.Type: GrantFiled: September 4, 2020Date of Patent: April 25, 2023Assignee: Murata Manufacturing Co., Ltd.Inventors: David J. Perreault, James Garrett, Sri Harsh Pakala, Brendan Metzner, Ivan Duzevik, John R. Hoversten, Yevgeniy A. Tkachenko
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Publication number: 20220149725Abstract: Described are circuits and techniques to increase the efficiency of radio-frequency (rf) amplifiers including rf power amplifiers (PAs) through “supply modulation” (also referred to as “drain modulation” or “collector modulation”), in which supply voltages provided to rf amplifiers is adjusted dynamically (“modulated”) over time depending upon the rf signal being synthesized. For the largest efficiency improvements, a supply voltage can be adjusted among discrete voltage levels or continuously on a short time scale. The supply voltages (or voltage levels) provided to an rf amplifier may also be adapted to accommodate longer-term changes in desired rf envelope such as associated with adapting transmitter output strength to minimize errors in data transfer, for rf “traffic” variations.Type: ApplicationFiled: January 10, 2022Publication date: May 12, 2022Applicant: Eta Wireless, Inc.Inventors: James Garrett, Sri Harsh Pakala, Brendan Metzner, Ivan Duzevik, David J. Perreault, John R. Hoversten, Yevgeniy A. Tkachenko
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Patent number: 11245367Abstract: Described are circuits and techniques to increase the efficiency of radio-frequency (rf) amplifiers including rf power amplifiers (PAs) through “supply modulation” (also referred to as “drain modulation” or “collector modulation”), in which supply voltages provided to rf amplifiers is adjusted dynamically (“modulated”) overtime depending upon the rf signal being synthesized. For the largest efficiency improvements, a supply voltage can be adjusted among discrete voltage levels or continuously on a short time scale. The supply voltages (or voltage levels) provided to an rf amplifier may also be adapted to accommodate longer-term changes in desired rf envelope such as associated with adapting transmitter output strength to minimize errors in data transfer, for rf “traffic” variations.Type: GrantFiled: July 8, 2020Date of Patent: February 8, 2022Assignee: ETA WIRELESS, INC.Inventors: James Garrett, Sri Harsh Pakala, Brendan Metzner, Ivan Duzevik, David J. Perreault, John R. Hoversten, Yevgeniy A. Tkachenko
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Publication number: 20210313936Abstract: Described are circuits and techniques to increase the efficiency of radio-frequency (rf) amplifiers including rf power amplifiers (PAs) through “supply modulation” (also referred to as “drain modulation” or “collector modulation”), in which supply voltages provided to rf amplifiers is adjusted dynamically (“modulated”) overtime depending upon the rf signal being synthesized. For the largest efficiency improvements, a supply voltage can be adjusted among discrete voltage levels or continuously on a short time scale. The supply voltages (or voltage levels) provided to an rf amplifier may also be adapted to accommodate longer-term changes in desired rf envelope such as associated with adapting transmitter output strength to minimize errors in data transfer, for rf “traffic” variations.Type: ApplicationFiled: July 8, 2020Publication date: October 7, 2021Inventors: James GARRETT, Sri Harsh PAKALA, Brendan METZNER, Ivan DUZEVIK, David J. PERREAULT, John R. HOVERSTEN, Yevgeniy A. TKACHENKO