Patents by Inventor Brendan Michael Cusack

Brendan Michael Cusack has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10910414
    Abstract: An integrated ultraviolet (UV) detector includes a silicon carbide (SiC) substrate, supporting metal oxide field effect transistors (MOSFETs), and PN Junction photodiodes. The MOSFET includes a first drain/source implant in the SiC substrate and a second drain/source implant in the SiC substrate. The P-N junction photodiodes include a blanket oxide over the silicon carbide substrate and the gate, an implant extending into the silicon carbide substrate, and an opening extending through the blanket oxide layer down to the silicon carbide substrate on one side of the gate of the P-N junction photodiode.
    Type: Grant
    Filed: August 11, 2020
    Date of Patent: February 2, 2021
    Assignee: CoolCAD Electronics, LLC
    Inventors: Neil Goldsman, Akin Akturk, Zeynep Dilli, Brendan Michael Cusack, Mitchell Adrian Gross
  • Patent number: 10763284
    Abstract: An integrated ultraviolet (UV) detector includes a silicon carbide (SiC) substrate, supporting metal oxide field effect transistors (MOSFETs), Schottky photodiodes, and PN Junction photodiodes. The MOSFET includes a first drain/source implant in the SiC substrate and a second drain/source implant in the SiC substrate. The Schottky photodiodes include another implant in the SiC substrate and a surface metal area configured to pass UV light.
    Type: Grant
    Filed: September 25, 2019
    Date of Patent: September 1, 2020
    Assignee: CoolCAD Electronics, LLC
    Inventors: Neil Goldsman, Akin Akturk, Zeynep Dilli, Brendan Michael Cusack, Mitchell Adrian Gross
  • Patent number: 10446592
    Abstract: An integrated ultraviolet (UV) detector includes a silicon carbide (SiC) substrate, supporting metal oxide field effect transistors (MOSFETs), Schottky photodiodes, and PN Junction photodiodes. The MOSFET includes a first drain/source implant in the SiC substrate and a second drain/source implant in the SiC substrate. The Schottky photodiodes include another implant in the SiC substrate and a surface metal area configured to pass UV light.
    Type: Grant
    Filed: November 6, 2017
    Date of Patent: October 15, 2019
    Assignee: CoolCAD Electronics, LLC
    Inventors: Neil Goldsman, Akin Akturk, Zeynep Dilli, Brendan Michael Cusack, Mitchell Adrian Gross