Patents by Inventor Brennan Milligan
Brennan Milligan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20170025280Abstract: A method for forming a Boron doped metallic film, such as Titanium Boron Nitride, is disclosed. The method allows for creation of the metallic film with a high work function and low resistivity, while limiting the increase in effective oxide thickness. The method comprises a thin metallic layer deposition step as well as a Boron-based gas pulse step. The Boron-based gas pulse deposits Boron and allows for the removal of excess halogens within the metallic film. The steps may be repeated in order to achieve a desired thickness of the metallic film.Type: ApplicationFiled: July 24, 2015Publication date: January 26, 2017Inventor: Robert Brennan Milligan
-
Patent number: 9412564Abstract: A processing chamber including a reaction chamber having a processing area, a processing gas inlet in communication with the processing area, a first excited species generation zone in communication with the processing gas inlet and a second exited species generation zone in communication with the processing gas inlet. A method of processing a substrate including the steps of loading a substrate within a processing area, activating a first excited species generation zone to provide a first excited species precursor to the processing area during a first pulse and, activating a second excited species generation zone to provide a second excited species precursor different from the first excited species precursor to the processing area during a second pulse.Type: GrantFiled: March 16, 2015Date of Patent: August 9, 2016Assignee: ASM IP Holding B.V.Inventors: Robert Brennan Milligan, Fred Alokozai
-
Publication number: 20160196977Abstract: Methods of treating metal-containing thin films, such as films comprising titanium carbide, with a silane/borane agent are provided. In some embodiments a film comprising titanium carbide is deposited on a substrate by an atomic layer deposition (ALD) process. The process may include a plurality of deposition cycles involving alternating and sequential pulses of a first source chemical that comprises titanium and at least one halide ligand, a second source chemical comprising metal and carbon, wherein the metal and the carbon from the second source chemical are incorporated into the thin film, and a third source chemical, wherein the third source chemical is a silane or borane that at least partially reduces oxidized portions of the titanium carbide layer formed by the first and second source chemicals. In some embodiments treatment forms a capping layer on the metal carbide film.Type: ApplicationFiled: January 4, 2016Publication date: July 7, 2016Inventors: Jerry Chen, Vladimir Machkaoutsan, Brennan Milligan, Jan Maes, Suvi Haukka, Eric Shero, Tom Blomberg, Dong Li
-
Publication number: 20160013024Abstract: A processing chamber including a reaction chamber having a processing area, a processing gas inlet in communication with the processing area, a first excited species generation zone in communication with the processing gas inlet and a second exited species generation zone in communication with the processing gas inlet. A method of processing a substrate including the steps of loading a substrate within a processing area, activating a first excited species generation zone to provide a first excited species precursor to the processing area during a first pulse and, activating a second excited species generation zone to provide a second excited species precursor different from the first excited species precursor to the processing area during a second pulse.Type: ApplicationFiled: March 16, 2015Publication date: January 14, 2016Inventors: Robert Brennan Milligan, Fred Alokozai
-
Patent number: 9236247Abstract: Methods of treating metal-containing thin films, such as films comprising titanium carbide, with a silane or a borane agent are provided. In some embodiments a film comprising titanium carbide is deposited on a substrate by an atomic layer deposition (ALD) process. The process may include a plurality of deposition cycles involving alternating and sequential pulses of a first source chemical that comprises titanium and at least one halide ligand, a second source chemical comprising metal and carbon, wherein the metal and the carbon from the second source chemical are incorporated into the thin film, and a third source chemical, wherein the third source chemical is a silane or borane that at least partially reduces oxidized portions of the titanium carbide layer formed by the first and second source chemicals. In some embodiments treatment forms a capping layer on the metal carbide film.Type: GrantFiled: August 18, 2014Date of Patent: January 12, 2016Assignee: ASM IP HOLDING B.V.Inventors: Jerry Chen, Vladimir Machkaoutsan, Brennan Milligan, Jan Maes, Suvi Haukka, Eric Shero, Tom Blomberg, Dong Li
-
Publication number: 20150184291Abstract: Embodiments related to hardware and methods for processing a semiconductor substrate are disclosed. One example film deposition reactor includes a process gas distributor including a plasma gas-feed inlet located to supply plasma gas to a plasma generation region within the film deposition reactor and a precursor gas-feed inlet located to supply film precursor gas downstream of the plasma generation region; an insulating confinement vessel configured to maintain a plasma generation region at a reduced pressure within the film deposition reactor and an inductively-coupled plasma (ICP) coil arranged around a portion of a sidewall of the insulating confinement vessel and positioned so that the sidewall separates the plasma generation region from the ICP coil; and a susceptor configured to support the semiconductor substrate so that a film deposition surface of the semiconductor substrate is exposed to a reaction region formed downstream of the process gas distributor.Type: ApplicationFiled: March 16, 2015Publication date: July 2, 2015Inventors: Fred Alokozai, Robert Brennan Milligan
-
Publication number: 20150179440Abstract: Methods of treating metal-containing thin films, such as films comprising titanium carbide, with a silane/borane agent are provided. In some embodiments a film comprising titanium carbide is deposited on a substrate by an atomic layer deposition (ALD) process. The process may include a plurality of deposition cycles involving alternating and sequential pulses of a first source chemical that comprises titanium and at least one halide ligand, a second source chemical comprising metal and carbon, wherein the metal and the carbon from the second source chemical are incorporated into the thin film, and a third source chemical, wherein the third source chemical is a silane or borane that at least partially reduces oxidized portions of the titanium carbide layer formed by the first and second source chemicals. In some embodiments treatment forms a capping layer on the metal carbide film.Type: ApplicationFiled: August 18, 2014Publication date: June 25, 2015Inventors: Jerry Chen, Vladimir Machkaoutsan, Brennan Milligan, Jan Maes, Suvi Haukka, Eric Shero, Tom Blomberg, Dong Li
-
Patent number: 9029253Abstract: Nitrogen-containing phase-stabilized films, methods of forming phase-stabilized films, and structures and devices including the phase-stabilized films are disclosed. The phase-stabilized films include a matrix material and a phase stabilizer, which provides a morphologically stabilizing effect to a matrix material within the films. The phase-stabilized films may be used as, for example, gate electrodes and similar films in microelectronic devices.Type: GrantFiled: May 1, 2013Date of Patent: May 12, 2015Assignee: ASM IP Holding B.V.Inventors: Robert Brennan Milligan, Fred Alokozai
-
Patent number: 9021985Abstract: Embodiments related to hardware and methods for processing a semiconductor substrate are disclosed. One example film deposition reactor includes a process gas distributor including a plasma gas-feed inlet located to supply plasma gas to a plasma generation region within the film deposition reactor and a precursor gas-feed inlet located to supply film precursor gas downstream of the plasma generation region; an insulating confinement vessel configured to maintain a plasma generation region at a reduced pressure within the film deposition reactor and an inductively-coupled plasma (ICP) coil arranged around a portion of a sidewall of the insulating confinement vessel and positioned so that the sidewall separates the plasma generation region from the ICP coil; and a susceptor configured to support the semiconductor substrate so that a film deposition surface of the semiconductor substrate is exposed to a reaction region formed downstream of the process gas distributor.Type: GrantFiled: September 12, 2012Date of Patent: May 5, 2015Assignee: ASM IP Holdings B.V.Inventors: Fred Alokozai, Robert Brennan Milligan
-
Patent number: 9018111Abstract: A processing chamber including a reaction chamber having a processing area, a processing gas inlet in communication with the processing area, a first excited species generation zone in communication with the processing gas inlet and a second exited species generation zone in communication with the processing gas inlet. A method of processing a substrate including the steps of loading a substrate within a processing area, activating a first excited species generation zone to provide a first excited species precursor to the processing area during a first pulse and, activating a second excited species generation zone to provide a second excited species precursor different from the first excited species precursor to the processing area during a second pulse.Type: GrantFiled: July 22, 2013Date of Patent: April 28, 2015Assignee: ASM IP Holding B.V.Inventors: Robert Brennan Milligan, Fred Alokozai
-
Publication number: 20150024609Abstract: A processing chamber including a reaction chamber having a processing area, a processing gas inlet in communication with the processing area, a first excited species generation zone in communication with the processing gas inlet and a second exited species generation zone in communication with the processing gas inlet. A method of processing a substrate including the steps of loading a substrate within a processing area, activating a first excited species generation zone to provide a first excited species precursor to the processing area during a first pulse and, activating a second excited species generation zone to provide a second excited species precursor different from the first excited species precursor to the processing area during a second pulse.Type: ApplicationFiled: July 22, 2013Publication date: January 22, 2015Applicant: ASM IP Holding B.V.Inventors: Robert Brennan Milligan, Fred Alokozai
-
Patent number: 8841182Abstract: Methods of treating metal-containing thin films, such as films comprising titanium carbide, with a silane/borane agent are provided. In some embodiments a film including titanium carbide is deposited on a substrate by an atomic layer deposition (ALD) process. The process may include a plurality of deposition cycles involving alternating and sequential pulses of a first source chemical that includes titanium and at least one halide ligand, a second source chemical that includes metal and carbon, where the metal and the carbon from the second source chemical are incorporated into the thin film, and a third source chemical, where the third source chemical is a silane or borane that at least partially reduces oxidized portions of the titanium carbide layer formed by the first and second source chemicals. The treatment can form a capping layer on the metal carbide film.Type: GrantFiled: March 14, 2013Date of Patent: September 23, 2014Assignee: ASM IP Holding B.V.Inventors: Jerry Chen, Vladimir Machkaoutsan, Brennan Milligan, Jan Willem Maes, Suvi Haukka, Eric Shero, Tom E. Blomberg, Dong Li
-
Publication number: 20140273510Abstract: Methods of treating metal-containing thin films, such as films comprising titanium carbide, with a silane/borane agent are provided. In some embodiments a film comprising titanium carbide is deposited on a substrate by an atomic layer deposition (ALD) process. The process may include a plurality of deposition cycles involving alternating and sequential pulses of a first source chemical that comprises titanium and at least one halide ligand, a second source chemical comprising metal and carbon, wherein the metal and the carbon from the second source chemical are incorporated into the thin film, and a third source chemical, wherein the third source chemical is a silane or borane that at least partially reduces oxidized portions of the titanium carbide layer formed by the first and second source chemicals. In some embodiments treatment forms a capping layer on the metal carbide film.Type: ApplicationFiled: March 14, 2013Publication date: September 18, 2014Inventors: Jerry Chen, Vladimir Machkaoutsan, Brennan Milligan, Jan Willem Maes, Suvi Haukka, Eric Shero, Tom E. Blomberg, Dong Li
-
Publication number: 20140073143Abstract: Embodiments related to hardware and methods for processing a semiconductor substrate are disclosed. One example film deposition reactor includes a process gas distributor including a plasma gas-feed inlet located to supply plasma gas to a plasma generation region within the film deposition reactor and a precursor gas-feed inlet located to supply film precursor gas downstream of the plasma generation region; an insulating confinement vessel configured to maintain a plasma generation region at a reduced pressure within the film deposition reactor and an inductively-coupled plasma (ICP) coil arranged around a portion of a sidewall of the insulating confinement vessel and positioned so that the sidewall separates the plasma generation region from the ICP coil; and a susceptor configured to support the semiconductor substrate so that a film deposition surface of the semiconductor substrate is exposed to a reaction region formed downstream of the process gas distributor.Type: ApplicationFiled: September 12, 2012Publication date: March 13, 2014Applicant: ASM IP HOLDINGS B.V.Inventors: Fred Alokozai, Robert Brennan Milligan
-
Publication number: 20130292676Abstract: Nitrogen-containing phase-stabilized films, methods of forming phase-stabilized films, and structures and devices including the phase-stabilized films are disclosed. The phase-stabilized films include a matrix material and a phase stabilizer, which provides a morphologically stabilizing effect to a matrix material within the films. The phase-stabilized films may be used as, for example, gate electrodes and similar films in microelectronic devices.Type: ApplicationFiled: May 1, 2013Publication date: November 7, 2013Applicant: ASM IP Holding B.V.Inventors: Robert Brennan Milligan, Fred Alokozai
-
Patent number: 7666474Abstract: Methods of forming a metal carbide film are provided. In some embodiments, a substrate is exposed to alternating pulses of a transition metal species and plasma-excited argon. The transition metal species is reacted with a carbon species to deposit a metal carbide film. The substrate is exposed to the carbon species simultaneously with the transition metal species, or the substrate is exposed to the carbon species in pulses temporally separated from the pulses of the transition metal species. In some embodiments, the carbon species and the transition metal species form parts of the same precursor compound, e.g., a metal organic compound.Type: GrantFiled: May 7, 2008Date of Patent: February 23, 2010Assignee: ASM America, Inc.Inventors: Dong Li, Steven Marcus, Glen Wilk, Brennan Milligan
-
Publication number: 20090280267Abstract: Methods of forming a metal carbide film are provided. In some embodiments, a substrate is exposed to alternating pulses of a transition metal species and plasma-excited argon. The transition metal species is reacted with a carbon species to deposit a metal carbide film. The substrate is exposed to the carbon species simultaneously with the transition metal species, or the substrate is exposed to the carbon species in pulses temporally separated from the pulses of the transition metal species. In some embodiments, the carbon species and the transition metal species form parts of the same precursor compound, e.g., a metal organic compound.Type: ApplicationFiled: May 7, 2008Publication date: November 12, 2009Applicant: ASM AMERICA, INC.Inventors: Dong Li, Steven Marcus, Glen Wilk, Brennan Milligan
-
Patent number: D698904Type: GrantFiled: February 8, 2012Date of Patent: February 4, 2014Assignee: ASM IP Holding B.V.Inventors: Robert Brennan Milligan, Michael Halpin