Abstract: A portable auto-injector configured to store a liquid component in a first chamber separately from a dry medication in a second chamber, wherein a first actuation mechanism opens a valve allowing for the initiation of a mixing step prior to injection. An extendable needle guard is provided over the delivery assembly which prevents premature injection as well as inadvertent sticks or other cross contamination of a needle. The needle guard can also form part of a secondary trigger mechanism which injects the mixed components after the mixing stage is complete.

Abstract: A portable auto-injector configured to store a dry medication separately from a liquid component, wherein removal of a cap operates a first actuation mechanism which opens a valve between a first and second chamber that are slidably movable relative to each other and thus allows for the initiation of a mixing step prior to injection. An extendable needle guard is provided over the delivery assembly which prevents premature injection as well as inadvertent sticks or other cross contamination of a needle. The needle guard can also form part of a secondary trigger mechanism which injects the mixed components after the mixing stage is complete.

Abstract: A process is provided for etching a silicon-containing substrate to form nanowire arrays. In this process, one deposits nanoparticles and a metal film onto the substrate in such a way that the metal is present and touches silicon where etching is desired and is blocked from touching silicon or not present elsewhere. One submerges the metallized substrate into an etchant aqueous solution comprising HF and an oxidizing agent. In this way arrays of nanowires with controlled diameter and length are produced.

Abstract: The present disclosure provides methods of preparing a medical solution. In some aspects, the medical solution can be prepared from mixing a first liquid with a second liquid or mixing a solid component with a liquid in an autoinjector. In some aspects, the heat released from the mixing can promote solubility of a dry medicament in the solution.

Abstract: A portable auto-injector is capable of moving from a compact state where the auto-injector is in a shape easier to transport than in an activation state wherein the auto-injector has been extended. A safety limits movement of the needle assembly and prevents premature needle sticks. The drug is stored in one or more dry and wet medicament states until need.

Abstract: A process is provided for etching a silicon-containing substrate. In the process, the surface of the substrate is cleaned. A film of alumina is deposited on the cleaned substrate surface. A silver film is deposited above the film of alumina. An etchant comprising HF is contacted with the silver film.

Abstract: A process is provided for etching a silicon-containing substrate to form nanowire arrays. In this process, one deposits nanoparticles and a metal film onto the substrate in such a way that the metal is present and touches silicon where etching is desired and is blocked from touching silicon or not present elsewhere. One submerges the metallized substrate into an etchant aqueous solution comprising HF and an oxidizing agent. In this way arrays of nanowires with controlled diameter and length are produced.

Abstract: A process for etching a silicon-containing substrate to form structures is provided. In the process, a metal is deposited and patterned onto a silicon-containing substrate (commonly one with a resistivity above 1-10 ohm-cm) in such a way that the metal is present and touches silicon where etching is desired and is blocked from touching silicon or not present elsewhere. The metallized substrate is submerged into an etchant aqueous solution comprising about 4 to about 49 weight percent HF and an oxidizing agent such as about 0.5 to about 30 weight percent H2O2, thus producing a metallized substrate with one or more trenches. A second silicon etch is optionally employed to remove nanowires inside the one or more trenches.

Abstract: A process is provided for etching a silicon-containing substrate to form nanowire arrays. In this process, one deposits nanoparticles and a metal film onto the substrate in such a way that the metal is present and touches silicon where etching is desired and is blocked from touching silicon or not present elsewhere. One submerges the metallized substrate into an etchant aqueous solution comprising HF and an oxidizing agent. In this way arrays of nanowires with controlled diameter and length are produced.

Abstract: A process for etching a silicon-containing substrate to form structures is provided. In the process, a metal is deposited and patterned onto a silicon-containing substrate (commonly one with a resistivity above 1-10 ohm-cm) in such a way that the metal is present and touches silicon where etching is desired and is blocked from touching silicon or not present elsewhere. The metallized substrate is submerged into an etchant aqueous solution comprising about 4 to about 49 weight percent HF and an oxidizing agent such as about 0.5 to about 30 weight percent H2O2, thus producing a metallized substrate with one or more trenches. A second silicon etch is optionally employed to remove nanowires inside the one or more trenches.

Abstract: A photovoltaic device is provided. It comprises at least two electrical contacts, p type dopants and n type dopants. It also comprises a bulk region and nanowires in an aligned array which contact the bulk region. All nanowires in the array have one predominant type of dopant, n or p, and at least a portion of the bulk region also comprises that predominant type of dopant. The portion of the bulk region comprising the predominant type of dopant typically contacts the nanowire array. The photovoltaic devices' p-n junction would then be found in the bulk region. The photovoltaic devices would commonly comprise silicon.

Abstract: A photovoltaic device is provided. It comprises at least two electrical contacts, p type dopants and n type dopants. It also comprises a bulk region and nanowires in an aligned array which contact the bulk region. All nanowires in the array have one predominant type of dopant, n or p, and at least a portion of the bulk region also comprises that predominant type of dopant. The portion of the bulk region comprising the predominant type of dopant typically contacts the nanowire array. The photovoltaic devices' p-n junction would then be found in the bulk region. The photovoltaic devices would commonly comprise silicon.

Abstract: A nanostructured optoelectronic device is provided which comprises a nanostructured material and a host material intermingled with the nanostructured material. The host material may have a higher index of refraction than the nanostructured material. The host material's index of refraction may be chosen to maximize the effective active area of the device. In an alternative embodiment, the host material comprises scattering centers or absorption/luminescence centers which absorb light and reemit the light at a different energy or both.

Abstract: A process is provided for etching a silicon-containing substrate to form nanowire arrays. In this process, one deposits nanoparticles and a metal film onto the substrate in such a way that the metal is present and touches silicon where etching is desired and is blocked from touching silicon or not present elsewhere. One submerges the metallized substrate into an etchant aqueous solution comprising HF and an oxidizing agent. In this way arrays of nanowires with controlled diameter and length are produced.

Abstract: A process is provided for etching a silicon-containing substrate. In the process, the surface of the substrate is cleaned. A film of alumina is deposited on the cleaned substrate surface. A silver film is deposited above the film of alumina. An etchant comprising HF is contacted with the silver film.

Abstract: A process is provided for etching a silicon-containing substrate to form nanowire arrays. In this process, one deposits nanoparticles and a metal film onto the substrate in such a way that the metal is present and touches silicon where etching is desired and is blocked from touching silicon or not present elsewhere. One submerges the metallized substrate into an etchant aqueous solution comprising HF and an oxidizing agent. In this way arrays of nanowires with controlled diameter and length are produced.

Abstract: A nanostructured optoelectronic device is provided which comprises a nanostructured material and a host material intermingled with the nanostructured material. The host material may have a higher index of refraction than the nanostructured material. The host material's index of refraction may be chosen to maximize the effective active area of the device. In an alternative embodiment, the host material comprises scattering centers or absorption/luminescence centers which absorb light and reemit the light at a different energy or both.

Abstract: A probe includes a substrate and a tetragonal structure disposed on the substrate that has four end points. Three of the end points are disposed adjacent to the substrate. A fourth of the end points extends outwardly and substantially normal to the substrate. In a method of making a probe tip, a plurality of tetrapods are grown and at least one of the tetrapods is placed on a substrate at a selected location. The tetrapod is affixed to the substrate at the selected location.

Abstract: A nanostructured optoelectronic device is provided which comprises a nanostructured material and a host material intermingled with the nanostructured material. The host material may have a higher index of refraction than the nanostructured material. The host material's index of refraction may be chosen to maximize the effective active area of the device. In an alternative embodiment, the host material comprises scattering centers or absorption/luminescence centers which absorb light and reemit the light at a different energy or both.

Abstract: In an aspect of the invention, a process to make a nanowire array is provided. In the process, silicon is deposited onto a conductive substrate comprising an organic material and optionally a conductive layer, thus forming a silicon-containing layer. Nanoparticles are deposited on top of the silicon-containing layer. Metal is deposited on top of the nanoparticles and silicon in such a way that the metal is present and touches silicon where etching is desired and is blocked from touching silicon or not present elsewhere. The metallized substrate is contacted with an etchant aqueous solution comprising about 2 to about 49 weight percent HF and an oxidizing agent.