Abstract: The embodiments described herein provide a semiconductor device layout and method that can be utilized in a wide variety of semiconductor devices. In one embodiment a semiconductor device is provided that includes a plurality of deep trench isolation structures that define and surround a first plurality of first trench-isolated regions in the substrate, and further define a second plurality of second trench-isolated regions in the substrate. The first plurality of first trench-isolated regions is arranged in a plurality of first columns, with each of the first columns including at least two of the first plurality of first trench-isolated regions. Likewise, the plurality of first columns are interleaved with the second trench-isolated regions to alternate in an array such that a second trench-isolated region is between consecutive first columns in the array and such that at least two first trench-isolated regions are between consecutive second trench-isolated regions in the array.

Abstract: The embodiments described herein provide a semiconductor device layout and method that can be utilized in a wide variety of semiconductor devices. In one embodiment a semiconductor device is provided that includes a plurality of deep trench isolation structures that define and surround a first plurality of first trench-isolated regions in the substrate, and further define a second plurality of second trench-isolated regions in the substrate. The first plurality of first trench-isolated regions is arranged in a plurality of first columns, with each of the first columns including at least two of the first plurality of first trench-isolated regions. Likewise, the plurality of first columns are interleaved with the second trench-isolated regions to alternate in an array such that a second trench-isolated region is between consecutive first columns in the array and such that at least two first trench-isolated regions are between consecutive second trench-isolated regions in the array.