Abstract: A system and method for treating a substrate is described. In particular, the system and method for treating a substrate include techniques for removing particles from the surface of a microelectronic substrate. The system includes: a vacuum process chamber; a substrate stage for supporting a microelectronic substrate within the vacuum process chamber; a cryogenic fluid supply system that can provide a fluid or fluid mixture through one or more nozzles arranged within the vacuum process chamber to inject a fluid spray into the process chamber in a direction towards an upper surface of the microelectronic substrate; and a process monitoring system coupled to the vacuum process chamber, and arranged to collect fluid spray data corresponding to at least one measured attribute of the injected fluid spray downstream of an exit of the one or more nozzles.

Abstract: A method for wet chemical processing of high-aspect-ratio microstructures and exiting the wet chemical processing while avoiding stiction between the high-aspect-ratio microstructures is provided. The method includes providing a substrate containing etched microstructures, removing etch residue from the substrate using wet chemical processing, rinsing the substrate with an aqueous hydrogen fluoride solution after the wet chemical processing, and drying the substrate using an inert gas.

Abstract: A system and method for treating a substrate is described. In particular, the system and method for treating a substrate include techniques for removing particles from the surface of a microelectronic substrate. The system includes: a vacuum process chamber; a substrate stage for supporting a microelectronic substrate within the vacuum process chamber; a cryogenic fluid supply system that can provide a fluid or fluid mixture through one or more nozzles arranged within the vacuum process chamber to inject a fluid spray into the process chamber in a direction towards an upper surface of the microelectronic substrate; and a process monitoring system coupled to the vacuum process chamber, and arranged to collect fluid spray data corresponding to at least one measured attribute of the injected fluid spray downstream of an exit of the one or more nozzles.

Abstract: The present invention provides improvements to the use of silyating agents in semiconductor processing. More particularly, the silyating agents may be provided in combination with a substantially non-flammable ether, so that the combination is substantially non-flammable. Additionally, the silyating agent may be utilized in vapor form, or applied in conjunction with the electromagnetic radiation. Each of these embodiments can enhance the usability of the silyating agent, i.e., by rendering the silyating agent more safe, more easily utilized in a variety of processing equipment and/or by enhancing the passivation efficacy/efficiency of the silyating agent.

Abstract: A process for etching high dielectric constant (high-k) films (e.g., ZrzSiyOx, HfzSiyOx, ZrzHfyOx, HfzAlyOx, and ZrzAlyOx) more rapidly than coexisting SiO2, polysilicon, silicon and/or other films is disclosed. The process comprises contacting the films with an aqueous solution comprising a fluoride containing species at a concentration sufficiently dilute to achieve a desired selective etch of the high-k film. The etching solution is preferably used above ambient temperature to further increase the etch selectivity of the high-k films relative to coexisting SiO2 and/or other films. The etch rate of the solution can also be adjusted by controlling the pH of the etching solution, e.g., by the addition of other acids or bases to the solution (for example, HCl or NH4OH).

Abstract: A process for etching high dielectric constant (high-k) films (e.g., ZrzSiyOx, HfzSiyOx, ZrzHfyOx, HfzAlyOx, and ZrzAlyOx) more rapidly than coexisting SiO2, polysilicon, silicon and/or other films is disclosed. The process comprises contacting the films with an aqueous solution comprising a fluoride containing species at a concentration sufficiently dilute to achieve a desired selective etch of the high-k film. The etching solution is preferably used above ambient temperature to further increase the etch selectivity of the high-k films relative to coexisting SiO2 and/or other films. The etch rate of the solution can also be adjusted by controlling the pH of the etching solution, e.g., by the addition of other acids or bases to the solution (for example, HCl or NH4OH).

Abstract: Silicon oxide on a substrate may be etched by providing the substrate in a process chamber, evacuating the chamber to a pressure of less than about 1 torr; providing a gaseous mixture comprising an inert gas, alcohol and water to the process chamber and substrate and, subsequently further providing a gaseous anhydrous halogen containing species to the gaseous mixture provided to the process chamber and substrate.

Abstract: The uniformity of SiO.sub.2 etching over the surface area of a substrate using a conventional SiO.sub.2 etching reaction, such as a HF/ROH reaction where R is H or alkyl, is improved when the substrate is pretreated before the etch reaction. In the pretreatment the substrate within a process chamber is exposed to UV illuminated halogen gas. Suitable halogen gases are fluorine and chlorine. Oxygen may optionally also be included with the halogen gas. The pretreatment renders the etching uniformity results substantially independent of the storage history of the wafer.