Patents by Inventor Brent E. Burns

Brent E. Burns has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6556737
    Abstract: A fiber-optic microswitch is disclosed that includes a flexible mirror positioning structure including an outer fixed frame, a movable platform upon which a mirror is formed, and two or more resilient support members (e.g., monocrystalline silicon springs or torsion beams) connecting the movable platform to the fixed frame. Stationary fibers are mounted over the mirror. An electromagnetic drive mechanism is provided for positioning the movable platform relative to the fixed frame. The electromagnetic drive mechanism includes one or more coils formed on a drive substrate mounted under the monocrystalline structure, and one or more pole pieces that are mounted on the movable platform. Currents are selectively applied to the coils to generate attractive electromagnetic forces that pull the pole pieces, thereby causing the movable platform to move (e.g., tilt) relative to the fixed frame, thereby selectively directing light from one fiber to another. Various monocrystalline structures are disclosed.
    Type: Grant
    Filed: November 2, 2000
    Date of Patent: April 29, 2003
    Assignee: Integrated Micromachines, Inc.
    Inventors: Denny K. Miu, Weilong Tang, Viktoria Temesvary, Brent E. Burns
  • Patent number: 6542653
    Abstract: The present invention is directed to a micro-switch assembly involving a magnetic latching mechanism. In one aspect of the present invention, it involves a micromachined structure that comprises an outer frame, an inner frame pivotally connected to the outer frame and rotates when an external electromagnetic force is applied, and a mechanism for latching the inner frame at a given angle of inclination relative to the outer frame. One embodiment of the present invention involves the use of a magnetic material, such as Permalloy, and permanent magnets to achieve the latching result. A Permalloy piece is attached to the inner frame of the micro-switch assembly and a magnet layer is attached to the outer frame. The magnetic force attracting the Permalloy piece and the magnet layer allows the latching of the two frames to occur in the absence of the external applied electromagnetic force.
    Type: Grant
    Filed: March 12, 2001
    Date of Patent: April 1, 2003
    Assignee: Integrated Micromachines, Inc.
    Inventors: Shuyun Wu, Brent E. Burns
  • Publication number: 20020126947
    Abstract: This invention relates to a micro-switch assembly involving a novel magnetic latching mechanism. In one aspect of the present invention, it involves a micromachined structure that comprises an outer frame, an inner frame pivotally connected to the outer frame and rotates when an external electromagnetic force is applied, and a means for latching the inner frame at a given angle of inclination relative to the outer frame. One embodiment of the present invention involves the use of a magnetic material, such as Permalloy, and permanent magnets to achieve the latching result. A Permalloy piece is attached to the inner frame of the micro-switch assembly and a magnet layer is attached to the outer frame. The magnetic force attracting the Permalloy piece and the magnet layer allows the latching of the two frames to occur in the absence of the external applied electromagnetic force.
    Type: Application
    Filed: March 12, 2001
    Publication date: September 12, 2002
    Inventors: Shuyun Wu, Brent E. Burns
  • Patent number: 6343178
    Abstract: This invention provides a very sensitive optical attenuator, which can be used to couple and attenuate optical signals between optical fibers with a wide range of attenuation level. Such an optical attenuator includes a flexible conductive membrane to be moved by an external force, such as electrostatic force, to achieve deformation of the conductive membrane. The conductive membrane can be formed, for example, by a vacuum deposited silicon nitride film. A thin metallic, conductive layer is then deposited on the flexible membrane to form a reflective mirror to receive and reflect incident optical signals. The semiconductor structure includes one or more spacing posts, with which the first structural member is to be joined and bonded. Electrodes are placed on the semiconductor structure in close proximity to the flexible membrane.
    Type: Grant
    Filed: November 7, 2000
    Date of Patent: January 29, 2002
    Assignee: Integrated Micromachines, Inc.
    Inventors: Brent E. Burns, Tseng-Yang Hsu
  • Publication number: 20010046346
    Abstract: An opto-mechanical micro-switch has a micromachined structure fabricated from a single silicon substrate. The micromachined structure includes an inner frame connected by a pair of beams to an outer frame. The beams define an axis of rotation around which the inner frame rotates relative to the outer frame. Flat walls are formed on the inner frame by an anisotropic etching process. When the inner frame rotates relative to the outer frame, the flat wall pivots into a vertical position to reflect or impede light passing from a light source to a light receiver. During fabrication, etch-stop material is selectively deposited in predefined regions of the single silicon substrate, and then a masking layer is formed and patterned. The anisotropic etching process is then performed through openings in the masking layer to form the inner frame and the outer frame. The etch-stop material prevents etching in the predefined regions that are located between the inner and outer frames, thereby forming the beams.
    Type: Application
    Filed: August 2, 1999
    Publication date: November 29, 2001
    Inventor: BRENT E. BURNS
  • Patent number: 5738757
    Abstract: A planar masking process for multi-depth etching of a silicon wafer wherein more than one etch depth is photolithographically patterned prior to etching the wafer and while the wafer still has a planar surface. A plurality of layers of masking material are disposed on at least one of the top and bottom surfaces of the silicon wafer and various of these layers are patterned by selectively photolithographically patterning and removing regions of the layers to form masks for areas where different silicon etch depths are desired. After forming the masks, the wafer is etched to a first level and the outermost mask is removed by etching. The silicon wafer is then again etched to another level with the remaining masks in place. The uppermost mask of the remaining masks is removed and the silicon wafer is again etched to still another level. The process is repeated until the desired levels have been etched in the silicon wafer.
    Type: Grant
    Filed: November 22, 1995
    Date of Patent: April 14, 1998
    Assignee: Northrop Grumman Corporation
    Inventors: Brent E. Burns, Benedict B. O'Brien
  • Patent number: 5392650
    Abstract: An integrated rate and acceleration sensor includes at least one accelerometer formed from a substantially planar silicon body. The at least one micro-silicon accelerometer (MSA) includes a first frame and a proof mass suspended from the first frame by first flexures. The at least one accelerometer has an associated sensitive axis and an associated rate axis that is orthogonally disposed to the sensitive axis. The integrated sensor further includes structure for dithering or vibrating the proof mass along a dither axis that is disposed perpendicularly to both the rate and the sensitive axes. The dithering structure includes at least first and second interdigitated electrodes. Finger portions of the electrodes are disposed for exerting an electrostatic force upon a portion of the planar body in response to an oscillatory drive signal.
    Type: Grant
    Filed: April 22, 1993
    Date of Patent: February 28, 1995
    Assignee: Northrop Grumman Corporation
    Inventors: Benedict B. O'Brien, Brent E. Burns, John A. Geen
  • Patent number: 5205171
    Abstract: A miniature accelerometer is fabricated using integrated circuit manufacturing and silicon micromachining techniques to form a closed loop, force balance sensor utilizing a silicon proofmass formed from and connected to a layer of silicon by a split flexure etched therein. The sensor circuitry detects AC signals coupled from the proofmass to a pair of electrodes formed on glass surfaces anodically bonded to the silicon layer. A DC restorative force is applied to the electrodes in response to the detected AC signals to balance acceleration forces applied to the proofmass. The sensor design is highly symmetrical.
    Type: Grant
    Filed: January 11, 1991
    Date of Patent: April 27, 1993
    Assignee: Northrop Corporation
    Inventors: Benedict B. O'Brien, Brent E. Burns, John A. Geen
  • Patent number: 5170283
    Abstract: A spatial light modulator including a silicon backplate having an insulating layer and a standoff grid of insulating material deposited on the backplate to define an array of cells. An electrode is deposited in each cell on said backplate. A thin membrane of doped silicon is mounted to the standoff grid and over said array of cells and electrodes. Mirrors are laid on the membrane to create an array of reflective pixels over the array of cells. When an electrode is selectively charged the portion of the membrane overlying that cell is deflected by electrostatic attraction between the membrane and the electrode. Taken overall, a pattern is assumed by the array of pixels which corresponds to the state of the electrical signals placed on the electrodes.
    Type: Grant
    Filed: July 24, 1991
    Date of Patent: December 8, 1992
    Assignee: Northrop Corporation
    Inventors: Benedict B. O'Brien, Brent E. Burns, King L. Hu, Adrian C. Ionescu