Patents by Inventor Bret Halpern

Bret Halpern has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for hydrogen atom assisted jet vapor deposition for parylene N and other polymeric thin films
    Patent number: 6165554
    Abstract: A method is presented for the vapor deposition of a material film upon a substrate. The method comprises the use of a Jet Vapor Deposition process with a vaporized polymer gas flowing at supersonic velocity. The vaporized polymer gas consists of a carrier gas and a vaporized polymer, such as Parylene. The vaporized polymer gas impinges upon the substrate through a port and forms the material film.
    Type: Grant
    Filed: November 12, 1998
    Date of Patent: December 26, 2000
    Assignee: Jet Process Corporation
    Inventors: Bret Halpern, Raymond F. Graves
  • Multiple micro inlet silane injection system for the jet vapor deposition of silicon nitride with a microwave discharge jet source
    Patent number: 6148764
    Abstract: Introducing a silane reactant gas into a Jet Vapor Deposition microwave discharge source for deposition of silicon nitride films at increased rate. An array of regularly spaced micro-inlets in a JVD microwave discharge source delivers the silane reactant gas and act as non-interfering silane injectors to give a rate increase proportional to the number of micro-inlets while preserving deposited film quality.
    Type: Grant
    Filed: December 29, 1998
    Date of Patent: November 21, 2000
    Assignee: Jet Process Corporation
    Inventors: Guang-Ji Cui, Takashi Tamagawa, Bret Halpern
  • Jet vapor deposition of organic molecule guest-inorganic host thin films
    Patent number: 5720821
    Abstract: A host-guest jet vapor deposition system uses sonic jets and moving substrates to produce host-guest films in which complex organic molecules are trapped in hard, inorganic hosts. The system is capable of film fabrication at high rate and room temperature. Guest molecule concentrations are large and film quality is excellent. Films made in accordance with the present invention have applications in optics and electronics.
    Type: Grant
    Filed: November 15, 1995
    Date of Patent: February 24, 1998
    Assignee: Jet Process Corpo
    Inventor: Bret Halpern
  • Jet vapor deposition of organic molecule guest-inorganic host thin films
    Patent number: 5650197
    Abstract: A host-guest jet vapor deposition system uses sonic jets and moving substrates to produce host-guest films in which complex organic molecules are trapped in hard, inorganic hosts. The system is capable of film fabrication at high rate and room temperature. Guest molecule concentrations are large and film quality is excellent. Films made in accordance with the present invention have applications in optics and electronics.
    Type: Grant
    Filed: October 5, 1995
    Date of Patent: July 22, 1997
    Assignee: Jet Process Corporation
    Inventor: Bret Halpern
  • Electron jet vapor deposition system
    Patent number: 5571332
    Abstract: A gas jet film deposition system includes a source of thermionically emitted electrons which are accelerated through carrier gas and generate He ions by impact ionization. The resultant electron avalanching and multiplication generates an extremely dense plasma, and produces large electron currents. The electron current is collected at a free, high electric field end of a crucible. The present system can generate vaporized evaporant which is entrained in the gas jet and thereby provide a high density source of ions. The ions may be presented to a substrate together with or without the evaporant.
    Type: Grant
    Filed: February 10, 1995
    Date of Patent: November 5, 1996
    Assignee: Jet Process Corporation
    Inventor: Bret Halpern