Patents by Inventor Bret J. Elkind

Bret J. Elkind has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12170154
    Abstract: A device for producing electricity. The device includes a substrate having spaced apart first and second surfaces and doped a first dopant type, first semiconductor material layers disposed atop the first substrate surface and doped the first dopant type, and second semiconductor material layers disposed atop the first semiconductor material layers and doped a second dopant type. A first contact is in electrical contact with the second substrate surface or in electrical contact with one of the first semiconductor material layers. A beta particle source emits beta particles that penetrate into the semiconductor material layers; the beta particle source is proximate the uppermost layer of the second plurality of semiconductor material layers. A second contact is in electrical contact with one of the second plurality of semiconductor material layers. In one embodiment, bi-polar contacts (the first and second contacts) are co-located on each major face of the device.
    Type: Grant
    Filed: January 15, 2024
    Date of Patent: December 17, 2024
    Assignee: CITY LABS, INC.
    Inventors: Peter Cabauy, Larry C. Olsen, Bret J. Elkind, Jesse Grant
  • Publication number: 20240242853
    Abstract: A device for producing electricity. The device includes a substrate having spaced apart first and second surfaces and doped a first dopant type, first semiconductor material layers disposed atop the first substrate surface and doped the first dopant type, and second semiconductor material layers disposed atop the first semiconductor material layers and doped a second dopant type. A first contact is in electrical contact with the second substrate surface or in electrical contact with one of the first semiconductor material layers. A beta particle source emits beta particles that penetrate into the semiconductor material layers; the beta particle source is proximate the uppermost layer of the second plurality of semiconductor material layers. A second contact is in electrical contact with one of the second plurality of semiconductor material layers. In one embodiment, bi-polar contacts (the first and second contacts) are co-located on each major face of the device.
    Type: Application
    Filed: January 15, 2024
    Publication date: July 18, 2024
    Inventors: Peter CABAUY, Larry C. OLSEN, Bret J. ELKIND, Jesse GRANT
  • Patent number: 11875907
    Abstract: A device for producing electricity. The device includes a substrate having spaced apart first and second surfaces and doped a first dopant type, first semiconductor material layers disposed atop the first substrate surface and doped the first dopant type, and second semiconductor material layers disposed atop the first semiconductor material layers and doped a second dopant type. A first contact is in electrical contact with the second substrate surface or in electrical contact with one of the first semiconductor material layers. A beta particle source emits beta particles that penetrate into the semiconductor material layers; the beta particle source is proximate the uppermost layer of the second plurality of semiconductor material layers. A second contact is in electrical contact with one of the second plurality of semiconductor material layers. In one embodiment, bi-polar contacts (the first and second contacts) are co-located on each major face of the device.
    Type: Grant
    Filed: October 3, 2022
    Date of Patent: January 16, 2024
    Assignee: CITY LABS, INC.
    Inventors: Peter Cabauy, Larry C. Olsen, Bret J. Elkind, Jesse Grant
  • Publication number: 20230091756
    Abstract: A device for producing electricity. The device includes a substrate having spaced apart first and second surfaces and doped a first dopant type, first semiconductor material layers disposed atop the first substrate surface and doped the first dopant type, and second semiconductor material layers disposed atop the first semiconductor material layers and doped a second dopant type. A first contact is in electrical contact with the second substrate surface or in electrical contact with one of the first semiconductor material layers. A beta particle source emits beta particles that penetrate into the semiconductor material layers; the beta particle source is proximate the uppermost layer of the second plurality of semiconductor material layers. A second contact is in electrical contact with one of the second plurality of semiconductor material layers. In one embodiment, bi-polar contacts (the first and second contacts) are co-located on each major face of the device.
    Type: Application
    Filed: October 3, 2022
    Publication date: March 23, 2023
    Inventors: PETER CABAUY, LARRY OLSEN, BRET J. ELKIND, JESSE GRANT
  • Patent number: 11462337
    Abstract: A device for producing electricity. The device includes a substrate having spaced apart first and second surfaces and doped a first dopant type, first semiconductor material layers disposed atop the first substrate surface and doped the first dopant type, and second semiconductor material layers disposed atop the first semiconductor material layers and doped a second dopant type. A first contact is in electrical contact with the second substrate surface or in electrical contact with one of the first semiconductor material layers. A beta particle source emits beta particles that penetrate into the semiconductor material layers; the beta particle source is proximate the uppermost layer of the second plurality of semiconductor material layers. A second contact is in electrical contact with one of the second plurality of semiconductor material layers. In one embodiment, bi-polar contacts (the first and second contacts) are co-located on each major face of the device.
    Type: Grant
    Filed: April 12, 2021
    Date of Patent: October 4, 2022
    Assignee: CITY LABS, INC.
    Inventors: Peter Cabauy, Larry Olsen, Bret J. Elkind, Jesse Grant
  • Publication number: 20210233675
    Abstract: A device for producing electricity. The device includes a substrate having spaced apart first and second surfaces and doped a first dopant type, first semiconductor material layers disposed atop the first substrate surface and doped the first dopant type, and second semiconductor material layers disposed atop the first semiconductor material layers and doped a second dopant type. A first contact is in electrical contact with the second substrate surface or in electrical contact with one of the first semiconductor material layers. A beta particle source emits beta particles that penetrate into the semiconductor material layers; the beta particle source is proximate the uppermost layer of the second plurality of semiconductor material layers. A second contact is in electrical contact with one of the second plurality of semiconductor material layers. In one embodiment, bi-polar contacts (the first and second contacts) are co-located on each major face of the device.
    Type: Application
    Filed: April 12, 2021
    Publication date: July 29, 2021
    Inventors: PETER CABAUY, LARRY OLSEN, BRET J. ELKIND, JESSE GRANT
  • Patent number: 10978215
    Abstract: A device for producing electricity. The device includes a substrate having spaced apart first and second surfaces and doped a first dopant type, first semiconductor material layers disposed atop the first substrate surface and doped the first dopant type, and second semiconductor material layers disposed atop the first semiconductor material layers and doped a second dopant type. A first contact is in electrical contact with the second substrate surface or in electrical contact with one of the first semiconductor material layers. A beta particle source emits beta particles that penetrate into the semiconductor material layers; the beta particle source is proximate the uppermost layer of the second plurality of semiconductor material layers. A second contact is in electrical contact with one of the second plurality of semiconductor material layers. In one embodiment, bi-polar contacts (the first and second contacts) are co-located on each major face of the device.
    Type: Grant
    Filed: May 22, 2017
    Date of Patent: April 13, 2021
    Inventors: Peter Cabauy, Larry C. Olsen, Bret J. Elkind, Jesse Grant
  • Patent number: 10431345
    Abstract: A betavoltaic power source. The power source comprises a source of beta particles and a plurality of regions each for collecting the beta particles and for generating electron hole pairs responsive to the beta particle flux. A first set of the plurality of regions is disposed proximate a first surface of the source and a second set of the plurality of regions is disposed proximate a second surface. The first and second surface in opposing relation. A secondary power source is charged by a current developed by the electron hole pairs.
    Type: Grant
    Filed: May 8, 2017
    Date of Patent: October 1, 2019
    Assignee: CITY LABS, INC.
    Inventors: Peter Cabauy, Bret J. Elkind, Jesse Grant
  • Publication number: 20170358377
    Abstract: A device for producing electricity. The device includes a substrate having spaced apart first and second surfaces and doped a first dopant type, first semiconductor material layers disposed atop the first substrate surface and doped the first dopant type, and second semiconductor material layers disposed atop the first semiconductor material layers and doped a second dopant type. A first contact is in electrical contact with the second substrate surface or in electrical contact with one of the first semiconductor material layers. A beta particle source emits beta particles that penetrate into the semiconductor material layers; the beta particle source is proximate the uppermost layer of the second plurality of semiconductor material layers. A second contact is in electrical contact with one of the second plurality of semiconductor material layers. In one embodiment, bi-polar contacts (the first and second contacts) are co-located on each major face of the device.
    Type: Application
    Filed: May 22, 2017
    Publication date: December 14, 2017
    Inventors: Peter Cabauy, Larry C. Olsen, Bret J. Elkind, Jesse Grant
  • Patent number: 8634201
    Abstract: An assembly carrying a radioisotope power source for attaching to a printed circuit board.
    Type: Grant
    Filed: December 1, 2010
    Date of Patent: January 21, 2014
    Assignee: City Labs, Inc.
    Inventors: Peter Cabauy, Bret J. Elkind, Denset Serralta, Jesse Grant