Abstract: A computer-implemented method for process control in chemical mechanical polishing in which an initial pre-polishing thickness of a substrate is measured at a metrology station, a parameter of an endpoint algorithm is determined from the initial thickness of the substrate, a substrates is polished at a polishing station, and polishing stops when an endpoint criterion is detected using the endpoint algorithm.

Abstract: A computer-implemented method for process control in chemical mechanical polishing in which an initial pre-polishing thickness of a substrate is measured at a metrology station, a parameter of an endpoint algorithm is determined from the initial thickness of the substrate, a substrates is polished at a polishing station, and polishing stops when an endpoint criterion is detected using the endpoint algorithm.

Abstract: A computer-implemented method for process control in chemical mechanical polishing in which an initial pre-polishing thickness of a substrate is measured at a metrology station, a parameter of an endpoint algorithm is determined from the initial thickness of the substrate, a substrates is polished at a polishing station, and polishing stops when an endpoint criterion is detected using the endpoint algorithm.

Abstract: A computer-implemented method for process control in chemical mechanical polishing in which an initial pre-polishing thickness of a substrate is measured at a metrology station, a parameter of an endpoint algorithm is determined from the initial thickness of the substrate, a substrates is polished at a polishing station, and polishing stops when an endpoint criterion is detected using the endpoint algorithm.

Abstract: A technique for matching performance of ion implantation devices using an in-situ mask. In one particular exemplary embodiment, ion implantation is performed on a portion of a substrate while the remainder is masked off. The substrate is then moved to a second implanter tool. Implantation is then performed on another portion of the same substrate using the second tool while a mask covers the remainder of the substrate, including the first portion. After the second implantation process, parametric testing may be performed on semiconductor devices manufactured on the first and second portions to determine if there is variation in one or more performance characteristics of these semiconductor devices. If variations are found, changes may be suggested to one or more operating parameters of one of the implantation tools to reduce performance variation of implanters within the fabrication facility.

Abstract: A computer-implemented method for process control in chemical mechanical polishing in which an initial pre-polishing thickness of a substrate is measured at a metrology station, a parameter of an endpoint algorithm is determined from the initial thickness of the substrate, a substrates is polished at a polishing station, and polishing stops when an endpoint criterion is detected using the endpoint algorithm.

Abstract: A technique for matching performance of ion implantation devices using an in-situ mask. In one particular exemplary embodiment, ion implantation is performed on a portion of a substrate while the remainder is masked off. The substrate is then moved to a second implanter tool. Implantation is then performed on another portion of the same substrate using the second tool while a mask covers the remainder of the substrate, including the first portion. After the second implantation process, parametric testing may be performed on semiconductor devices manufactured on the first and second portions to determine if there is variation in one or more performance characteristics of these semiconductor devices. If variations are found, changes may be suggested to one or more operating parameters of one of the implantation tools to reduce performance variation of implanters within the fabrication facility.

Abstract: A computer-implemented method for process control in chemical mechanical polishing in which an initial pre-polishing thickness of a substrate is measured at a metrology station, a parameter of an endpoint algorithm is determined from the initial thickness of the substrate, a substrates is polished at a polishing station, and polishing stops when an endpoint criterion is detected using the endpoint algorithm.

Abstract: A computer program product for process control in chemical mechanical polishing is described. The product includes instructions to cause a processor to receive a measurement of an initial pre-polishing thickness of a layer of a substrate from a metrology station, determine a value for a parameter of an endpoint algorithm from the initial thickness of the substrate, receive a monitoring signal generated from monitoring in-situ polishing of the substrate, process the monitoring signal to detect a signal feature indicating a final or intermediate endpoint and send instructions to stop polishing when an endpoint criterion is detected using the endpoint algorithm with the determined value for the parameter.

Abstract: A computer-implemented method for process control in chemical mechanical polishing in which an initial pre-polishing thickness of a substrate is measured at a metrology station, a parameter of an endpoint algorithm is determined from the initial thickness of the substrate, a substrates is polished at a polishing station, and polishing stops when an endpoint criterion is detected using the endpoint algorithm.

Abstract: An optical monitoring system for a two-step polishing process which generates a reflectance trace for each of plurality of radial zones. The CMP apparatus may switch from a high-selectivity slurry to a low-selectivity slurry when any of the reflectance traces indicate initial clearance of the metal layer, and polishing may halt when all of the reflectance traces indicate that oxide layer has been completely exposed.

Abstract: An optical monitoring system for a two-step polishing process which generates a reflectance trace for each of plurality of radial zones. The CMP apparatus may switch from a high-selectivity slurry to a low-selectivity slurry when any of the reflectance traces indicate initial clearance of the metal layer, and polishing may halt when all of the reflectance traces indicate that oxide layer has been completely exposed.

Abstract: An optical monitoring system for a two-step polishing process which generates a reflectance trace for each of plurality of radial zones. The CMP apparatus may switch from a high-selectivity slurry to a low-selectivity slurry when any of the reflectance traces indicate initial clearance of the metal layer, and polishing may halt when all of the reflectance traces indicate that oxide layer has been completely exposed.

Abstract: An optical monitoring system for a two-step polishing process which generates a reflectance trace for each of plurality of radial zones. The CMP apparatus may switch from a high-selectivity slurry to a low-selectivity slurry when any of the reflectance traces indicate initial clearance of the metal layer, and polishing may halt when all of the reflectance traces indicate that oxide layer has been completely exposed.

Abstract: Apparatus and methods of polishing substrates are disclosed. A retaining ring for a polishing apparatus includes an inner surface exposed to contact a peripheral edge of a substrate to be polished against a polishing surface, a bottom surface exposed to contact the polishing surface while the substrate is being polished, and a wear marker indicative of a preselected amount of wear of the bottom surface. The inner surface, bottom surface and wear marker may form part of a retaining ring used in chemical mechanical polishing operations. In one method, one or more substrates may be polished against a polishing surface using the retaining ring, and at least a portion of the retainer may be replaced when the bottom surface has been worn away by the preselected amount indicated by the wear marker.

Abstract: A fabrication tool integrates one or more electrodeposition stations with a CMP apparatus. The tool may transport substrates from the electroplating stations to the CMP apparatus without an intervening cleaning step. In addition, the thickness of an electrodeposited layer may be measured at a metrology station prior to polishing utilizing an instrument which physically contacts the surface of the substrate, and the measured thickness may be used to adjust the polishing parameters. Furthermore, the fabrication tool may have a single interface in which a dry and clean wafer is returned to the interface.

Abstract: A fabrication tool integrates one or more electrodeposition stations with a CMP apparatus. The tool may transport substrates from the electroplating stations to the CMP apparatus without an intervening cleaning step. In addition, the thickness of an electrodeposited layer may be measured at a metrology station prior to polishing utilizing an instrument which physically contacts the surface of the substrate, and the measured thickness may be used to adjust the polishing parameters. Furthermore, the fabrication tool may have a single interface in which a dry and clean wafer is returned to the interface.

Abstract: A plasma sputtering reactor in which a magnet is linearly scanned over the back of the sputtering target to enhance the sputtering. The magnet's linear scan is extended to beyond the wafer processing area. When the magnet reaches that point, conditions are changed within the reactor to cause particles otherwise trapped by the magnet to fall into an area of the reactor where they do not fall on the substrate being processed. The changed conditions may include extinguishing the plasma, reducing or reversing the target voltage, positively charging walls of the trap area, or pulsing gas through the plasma. Also, according to the invention, the plasma is ignited with the magnet positioned over the trap area so that particles generated in the ignition process are not immediately deposited on the wafer or the walls of the processing area, and they tend to stay in the trap area.

Abstract: Apparatus, positioned at an inlet port to a pump, for shielding the pump from a process chamber of a semiconductor wafer processing system, where the apparatus has a controllably variable effective throughput area, and method for electrically controlling the size of the effective throughput area. Specifically, the apparatus is a controllable restrictor shield supported by an actuator, having a first effective throughput area and a second effective throughput area, where the first effective throughput area is typically less than the second effective throughput area. The size of the effective throughput area is directly responsive to an electric signal that controls the actuator.