Abstract: A container including vertical side walls and a horizontal bottom wall coupled with the vertical side walls to define an interior volume. At least one vertical side wall includes an inner wall, a spaced apart outer wall, a top rail coupled with the inner wall, a bottom sill coupled with the inner wall, and a plurality of vertical supports coupled with the inner wall and extending between the top rail and the bottom sill. The inner wall has a first surface area and the outer wall portion has a second surface area that is less than the first surface area. A frame is coupled with the inner wall and supports the outer wall and extends between two of the plurality of vertical supports, the top rail, and the bottom sill. A panel is supported by the frame and disposed on the outer wall.

Abstract: A container including vertical side walls and a horizontal bottom wall coupled with the vertical side walls, the vertical side walls and bottom wall together defining an interior volume. At least one vertical side wall includes an inner wall portion, an outer wall portion spaced apart from the inner wall portion, a top rail coupled with the inner wall portion, a bottom sill coupled with the inner wall portion, and a plurality of vertical supports coupled with the inner wall portion and extending between the top rail and the bottom sill. The inner wall portion has a first surface area and the outer wall portion has a second surface area that is less than the first surface area. A frame is coupled with the inner wall portion and supports the outer wall portion, and the frame extends between two spaced apart vertical supports of the plurality of vertical supports, the top rail, and the bottom sill. A panel is supported by the frame and disposed on the outer wall portion.

Abstract: A folding assembly having first and second members that are pivotally attached to one another. A locking pin is disposed through the first member and second member and selectively actuatable to unlock the pivoting and opening or closing of the first and second members relative to one another. A spring-assist mechanism includes a primary spring element and a secondary spring element which act in conjunction to successively apply an opening force to the first or second member as it is opened. The assembly also includes a close-assist mechanism for partially closing the first and second members relative to one another.

Abstract: A knife sheath assembly that secures and protects a knife when subjected to harsh or rigorous conditions. The knife sheath assembly includes shims which add durability to the sheath assembly. The components of the sheath assembly are connected in such a way so as to allow broken or damaged parts to be replaced.

Abstract: A folding assembly includes a tool pivotally connected to a handle and movable between a closed position in which the tool extends along the handle and an open position in which a free end of the tool extends away from the handle. A manually actuated locking mechanism includes a locking pin extending axially through an elongated slot of the tool and into a track of the handle. A spring is disposed within the elongated slot of the tool that biases the locking pin away from the free end of the tool. A portion of the locking pin travels a length of the track as the tool is moved between the closed and open positions.

Abstract: Ferro-electric capacitor modules, methods of manufacture and design structures. The method of manufacturing the ferro-electric capacitor includes forming a barrier layer on an insulator layer of a CMOS structure. The method further includes forming a top plate and a bottom plate over the barrier layer. The method further includes forming a ferro-electric material between the top plate and the bottom plate. The method further includes encapsulating the barrier layer, top plate, bottom plate and ferro-electric material with an encapsulating material. The method further includes forming contacts to the top plate and bottom plate, through the encapsulating material. At least the contact to the top plate and a contact to a diffusion of the CMOS structure are in electrical connection through a common wire.

Abstract: Ferro-electric capacitor modules, methods of manufacture and design structures. The method of manufacturing the ferro-electric capacitor includes forming a barrier layer on an insulator layer of a CMOS structure. The method further includes forming a top plate and a bottom plate over the barrier layer. The method further includes forming a ferro-electric material between the top plate and the bottom plate. The method further includes encapsulating the barrier layer, top plate, bottom plate and ferro-electric material with an encapsulating material. The method further includes forming contacts to the top plate and bottom plate, through the encapsulating material. At least the contact to the top plate and a contact to a diffusion of the CMOS structure are in electrical connection through a common wire.

Abstract: A SiGe bipolar transistor including a semiconductor substrate having a collector and sub-collector region formed therein, wherein the collector and sub-collector are formed between isolation regions that are also present in the substrate is provided. Each isolation region includes a recessed surface and a non-recessed surface which are formed utilizing lithography and etching. A SiGe layer is formed on the substrate as well as the recessed non-recessed surfaces of each isolation region, the SiGe layer includes polycrystalline Si regions and a SiGe base region. A patterned insulator layer is formed on the SiGe base region; and an emitter is formed on the patterned insulator layer and in contact with the SiGe base region through an emitter window opening.

Abstract: A SiGe bipolar transistor including a semiconductor substrate having a collector and sub-collector region formed therein, wherein the collector and sub-collector are formed between isolation regions that are also present in the substrate is provided. Each isolation region includes a recessed surface and a non-recessed surface which are formed utilizing lithography and etching. A SiGe layer is formed on the substrate as well as the recessed non-recessed surfaces of each isolation region, the SiGe layer includes polycrystalline Si regions and a SiGe base region. A patterned insulator layer is formed on the SiGe base region; and an emitter is formed on the patterned insulator layer and in contact with the SiGe base region through an emitter window opening.

Abstract: A SiGe bipolar transistor including a semiconductor substrate having a collector and sub-collector region formed therein, wherein the collector and sub-collector are formed between isolation regions that are also present in the substrate is provided. Each isolation region includes a recessed surface and a non-recessed surface which are formed utilizing lithography and etching. A SiGe layer is formed on the substrate as well as the recessed non-recessed surfaces of each isolation region, the SiGe layer includes polycrystalline Si regions and a SiGe base region. A patterned insulator layer is formed on the SiGe base region; and an emitter is formed on the patterned insulator layer and in contact with the SiGe base region through an emitter window opening.

Abstract: A SiGe bipolar transistor including a semiconductor substrate having a collector and sub-collector region formed therein, wherein the collector and sub-collector are formed between isolation regions that are also present in the substrate is provided. Each isolation region includes a recessed surface and a non-recessed surface which are formed utilizing lithography and etching. A SiGe layer is formed on the substrate as well as the recessed non-recessed surfaces of each isolation region, the SiGe layer includes polycrystalline Si regions and a SiGe base region. A patterned insulator layer is formed on the SiGe base region; and an emitter is formed on the patterned insulator layer and in contact with the SiGe base region through an emitter window opening.