Abstract: A method includes identifying a recipe for depositing layers on a substrate in a processing chamber of a substrate processing system. The recipe comprises iterations of a set of one or more processes, and wherein each iteration of the iterations is for depositing at least one layer of the layers. The method further includes determining changes to parameters for depositing the at least one layer on the substrate. Each of the changes corresponds to a respective iteration of the iterations and is associated with a relative position of a corresponding layer. The layers are to be deposited on one or more substrates based on the recipe and the changes.

Abstract: A method includes identifying a recipe for depositing layers on a substrate in a processing chamber of a substrate processing system. The recipe comprises iterations of a set of one or more processes, and wherein each iteration of the iterations is for depositing at least one layer of the layers. The method further includes determining changes to parameters for depositing the at least one layer on the substrate. Each of the changes corresponds to a respective iteration of the iterations and is associated with a relative position of a corresponding layer. The layers are to be deposited on one or more substrates based on the recipe and the changes.

Abstract: A method includes identifying a recipe for depositing a plurality of layers on a substrate in a processing chamber of a substrate processing system. The recipe includes iterations of a set of processes. Each iteration is for depositing at least one layer. The method further includes determining iteration adjustments to cause uniformity of the layers. Each iteration adjustment corresponds to a respective iteration. The method further includes determining multipliers to cause an adjustment in thickness of one or more layers of the layers. Each multiplier of the multipliers corresponds to a corresponding iteration. The method further includes storing the iteration adjustments and the multipliers as stored iteration adjustments and stored multipliers. The layers are deposited on substrates based on the recipe and the stored iteration adjustments and the stored multipliers.

Abstract: A method includes identifying a recipe for depositing a plurality of layers on a substrate in a processing chamber of a substrate processing system. The recipe includes iterations of a set of processes. Each iteration is for depositing at least one layer. The method further includes determining iteration adjustments to cause uniformity of the layers. Each iteration adjustment corresponds to a respective iteration. The method further includes determining multipliers to cause an adjustment in thickness of one or more layers of the layers. Each multiplier of the multipliers corresponds to a corresponding iteration. The method further includes storing the iteration adjustments and the multipliers as stored iteration adjustments and stored multipliers. The layers are deposited on substrates based on the recipe and the stored iteration adjustments and the stored multipliers.

Abstract: Implementations disclosed herein describe a bevel etch apparatus within a loadlock bevel etch chamber and methods of using the same. The bevel etch apparatus has a mask assembly within the loadlock bevel etch chamber. During an etch process, the mask assembly delivers a gas flow to control bevel etch without the use of a shadow frame. As such, the edge exclusion at the bevel edge can be reduced, thus increasing product yield.

Abstract: Implementations disclosed herein describe a bevel etch apparatus within a loadlock bevel etch chamber and methods of using the same. The bevel etch apparatus has a mask assembly within the loadlock bevel etch chamber. During an etch process, the mask assembly delivers a gas flow to control bevel etch without the use of a shadow frame. As such, the edge exclusion at the bevel edge can be reduced, thus increasing product yield.

Abstract: Implementations disclosed herein describe a bevel etch apparatus within a loadlock bevel etch chamber and methods of using the same. The bevel etch apparatus has a mask assembly within the loadlock bevel etch chamber. During an etch process, the mask assembly delivers a gas flow to control bevel etch without the use of a shadow frame. As such, the edge exclusion at the bevel edge can be reduced, thus increasing product yield.

Abstract: Implementations disclosed herein describe a bevel etch apparatus within a loadlock bevel etch chamber and methods of using the same. The bevel etch apparatus has a mask assembly within the loadlock bevel etch chamber. During an etch process, the mask assembly delivers a gas flow to control bevel etch without the use of a shadow frame. As such, the edge exclusion at the bevel edge can be reduced, thus increasing product yield.

Abstract: Implementations disclosed herein describe a bevel etch apparatus within a loadlock bevel etch chamber and methods of using the same. The bevel etch apparatus has a mask assembly within the loadlock bevel etch chamber. During an etch process, the mask assembly delivers a gas flow to control bevel etch without the use of a shadow frame. As such, the edge exclusion at the bevel edge can be reduced, thus increasing product yield.

Abstract: Implementations disclosed herein describe a bevel etch apparatus within a loadlock bevel etch chamber and methods of using the same. The bevel etch apparatus has a mask assembly within the loadlock bevel etch chamber. During an etch process, the mask assembly delivers a gas flow to control bevel etch without the use of a shadow frame. As such, the edge exclusion at the bevel edge can be reduced, thus increasing product yield.