Abstract: A polarization splitter-rotator (PSR) is described. The PSR having a silicon nitride based waveguide including a first silicon nitride segment comprising a tapered width in a longitudinal direction and a ridge extending in a transverse direction and an adiabatic coupler coupled with the first silicon nitride segment.

Abstract: A polarization splitter-rotator (PSR) is described. The PSR having a silicon nitride based waveguide to split and rotate an optical beam. The silicon nitride based waveguide having a first silicon nitride segment including a first layer and a second layer coupled with the first layer.

Abstract: A method of testing a photonics die at the wafer level includes providing a sacrificial waveguide and a grating coupler at least partially in a scribe line between dies of a wafer, performing one or more tests on the dies of the wafer via the sacrificial waveguide and grating coupler in the scribe line, and removing the sacrificial waveguide during separation of the dies of the wafer.

Abstract: A polarization splitter-rotator (PSR) is described. The PSR having a silicon nitride based waveguide to split and rotate an optical beam. The silicon nitride based waveguide having a first silicon nitride segment including a first layer and a second layer coupled with the first layer.

Abstract: A LiDAR system includes an optical source to emit an optical beam and a PSR a silicon nitride based waveguide to split and rotate an optical beam. The silicon nitride based waveguide includes a first silicon nitride segment including a first layer and a second layer, the first silicon nitride segment having tapered widths along a longitudinal direction. The second layer includes a first section extending from a first end of the first silicon nitride segment to a converging plane with increasing widths and a second section extending from the converging plane to a second end of the first silicon nitride segment with decreasing widths. The LIDAR system further includes an optical element to generate a local oscillator (LO) signal and an optical detector to mix the target return signal with the LO signal to generate a heterodyne signal to extract range and velocity information of the target.

Abstract: A light detection and ranging (LiDAR) system according to the present disclosure comprises an optical source to emit an optical beam. The LiDAR system comprises a PSR comprising a silicon nitride based waveguide to split and rotate a target return signal of the optical beam from a target. The silicon nitride based waveguide includes a first silicon nitride segment and a second silicon nitride segment. The first silicon nitride segment includes a first layer and a second layer. The first silicon nitride segment has tapered widths along a longitudinal direction. The second silicon nitride segment includes a silicon nitride adiabatic coupler. The LiDAR system further comprises an optical element to generate a local oscillator (LO) signal and a PD to mix the target return signal with the LO signal to generate a heterodyne signal to extract information of the target.

Abstract: Electron emission structures formed using standard semiconductor processes on a substrate first prepared with a topographical feature are disclosed. At least one layer of a first material is concurrently deposited on the substrate and etched from the substrate to form an atomically sharp feature. An at least one layer of a second material is deposited over the atomically sharp feature. A conductive layer is deposited over the at least one layer of the second material. A selected area of material is removed from the conductive layer and the at least one layer of second material to expose the atomically sharp feature. Finally, electrical connectivity is provided to elements of the electron emission structure.

Abstract: A sputter etch system and a method of conducting a sputter etch. The sputter etch system includes an etch chamber with a wafer pedestal having a top surface to support a wafer and a magnet configured to provide a continuous magnetic field directed at the top surface of the wafer pedestal.

Abstract: Electron emission structures formed using standard semiconductor processes on a substrate first prepared with a topographical feature are disclosed. At least one layer of a first material is concurrently deposited on the substrate and etched from the substrate to form an atomically sharp feature. An at least one layer of a second material is deposited over the atomically sharp feature. A conductive layer is deposited over the at least one layer of the second material. A selected area of material is removed from the conductive layer and the at least one layer of second material to expose the atomically sharp feature. Finally, electrical connectivity is provided to elements of the electron emission structure.

Abstract: A sputter etch system and a method of conducting a sputter etch. The sputter etch system includes an etch chamber with a wafer pedestal having a top surface to support a wafer and a magnet configured to provide a continuous magnetic field directed at the top surface of the wafer pedestal.

Abstract: Electron emission structures formed using standard semiconductor processes on a substrate first prepared with a topographical feature are disclosed. At least one layer of a first material is concurrently deposited on the substrate and etched from the substrate to form an atomically sharp feature. An at least one layer of a second material is deposited over the atomically sharp feature. A conductive layer is deposited over the at least one layer of the second material. A selected area of material is removed from the conductive layer and the at least one layer of second material to expose the atomically sharp feature. Finally, electrical connectivity is provided to elements of the electron emission structure.

Abstract: Electron emission structures formed using standard semiconductor processes on a substrate first prepared with a topographical feature are disclosed. At least one layer of a first material is concurrently deposited on the substrate and etched from the substrate to form an atomically sharp feature. An at least one layer of a second material is deposited over the atomically sharp feature. A conductive layer is deposited over the at least one layer of the second material. A selected area of material is removed from the conductive layer and the at least one layer of second material to expose the atomically sharp feature. Finally, electrical connectivity is provided to elements of the electron emission structure.

Abstract: A method for improving interlayer dielectric to metal layer adhesion including an in-situ plasma treatment process. A metal layer which is formed on a substrate is treated with plasma prior to the deposition of the interlayer dielectric. The interlayer dielectric is deposited above the metal layer and contacts are formed through the interlayer dielectric which electrically connect the underlying metal layer to a subsequently formed metal layer. The plasma treatment step creates open molecular bonds on the surface of the metal layer which cause the interface between the metal layer and the interlayer dielectric to become more adhesive. Thus, decreasing the likelihood of delamination that degrades the electrical reliability of the device.

Abstract: A method of depositing an inter layer dielectric. A first layer using plasma enhanced chemical vapor deposition (CVD) is deposited. It is followed by a second layer, deposited using sub atmospheric CVD. The second layer is argon sputter etched.

Abstract: A method of depositing an inter layer dielectric. A first layer using plasma enhanced chemical vapor deposition (CVD) is deposited. It is followed by a second layer, deposited using sub atmospheric CVD. The second layer is argon sputter etched.

Abstract: The present invention provides a discontinuous metal/polymer composite, with a metal layer, formed from a plurality of fine metal strands, which may be used, for example, in static or EMI shielding. The metal layer comprises a plurality of fine metal strands provided on the substrate, the metal strands individually having a cross-section with an area of about 100 to 100,000 .mu.m.sup.2 and the cross-section of the individual metal strands having a flat portion and an arcuate portion. The metal and polymer may be selected so that the composite is capable of being thermoformed without loss of electrical conductivity or transparency.