Abstract: A screed assembly includes a screed and a screed extension, with the screed coupled to the screed extension. The screed further includes an upper frame and a lower frame. The lower frame is adapted to move in a substantially vertical direction and movement in a substantially vertical direction of the lower frame results in corresponding substantially vertical movement of the screed extension.

Abstract: A screed assembly includes a screed and a screed extension, with the screed coupled to the screed extension. The screed further includes an upper frame and a lower frame. The lower frame is adapted to move in a substantially vertical direction and movement in a substantially vertical direction of the lower frame results in corresponding substantially vertical movement of the screed extension.

Abstract: A screed assembly includes a screed and a screed extension, with the screed coupled to the screed extension. The screed further includes an upper frame and a lower frame. The lower frame is adapted to move in a substantially vertical direction and movement in a substantially vertical direction of the lower frame results in corresponding substantially vertical movement of the screed extension.

Abstract: A screed assembly includes a screed and a screed extension, with the screed coupled to the screed extension. The screed further includes an upper frame and a lower frame. The lower frame is adapted to move in a substantially vertical direction and movement in a substantially vertical direction of the lower frame results in corresponding substantially vertical movement of the screed extension.

Abstract: Methods and resulting structure of forming a gas dielectric structure in an interconnect structure are disclosed. In one embodiment, the method includes providing the interconnect structure including at least one interconnect layer having a dielectric, at least one conductor and a first cap layer; and causing the dielectric to contract to form the gas dielectric structure by exposing the interconnect structure to radiation. The radiation can be electron beam radiation or UV radiation. In one embodiment, an interface-breaking enhancing film can be used to selectively locate the gas dielectric structures formed.

Abstract: The present invention provides a semiconducting device including a gate dielectric atop a semiconducting substrate, the semiconducting substrate containing source and drain regions adjacent the gate dielectric; a gate conductor atop the gate dielectric; a conformal dielectric passivation stack positioned on at least the gate conductor sidewalls, the conformal dielectric passivation stack comprising a plurality of conformal dielectric layers, wherein no electrical path extends entirely through the stack; and a contact to the source and drain regions, wherein the discontinuous seam through the conformal dielectric passivation stack substantially eliminates shorting between the contact and the gate conductor. The present invention also provides a method for forming the above-described semiconducting device.

Abstract: A multilevel semiconductor integrated circuit (IC) structure including a first interconnect level including a layer of dielectric material over a semiconductor substrate, the layer of dielectric material comprising a dense material for passivating semiconductor devices and local interconnects underneath; multiple interconnect layers of dielectric material formed above the layer of dense dielectric material, each layer of dielectric material including at least a layer of low-k dielectric material; and, a set of stacked via-studs in the low-k dielectric material layers, each of said set of stacked via studs interconnecting one or more patterned conductive structures, a conductive structure including a cantilever formed in the low-k dielectric material.

Abstract: Methods of etching a semiconductor structure using ion milling with a variable-position endpoint detector to unlayer multiple interconnect layers, including low-k dielectric films. The ion milling process is controlled for each material type to maintain a planar surface with minimal damage to the exposed materials. In so doing, an ion beam mills a first layer and detects an endpoint thereof using an optical detector positioned within the ion beam adjacent the first layer to expose a second layer of low-k dielectric film. Once the low-k dielectric film is exposed, a portion of the low-k dielectric film may be removed to provide spaces therein, which are backfilled with a material and polished to remove the backfill material and a layer of the multiple interconnect metal layers. Still further, the exposed low-k dielectric film may then be removed, and the exposed metal vias polished.