Abstract: A real time additive processing system for crude oil or refined fuel products is coupled to a fuel transport line that transfers fuel from one storage tank to another storage tank. The fuel additive processing system includes a fuel additive storage tank coupled to a liquid conduit having a liquid pump with a speed/stroke controller that regulates the liquid pump. The liquid conduit is coupled to the fuel transport line at a fuel additive injection nozzle. The fuel additive processing system also includes a flow rate transmitter and a chemical or physical property analyzer coupled to the fuel transport line downstream of the additive injection nozzle. The fuel additive processing system includes a flow controller that communicates with the liquid pump speed/stroke controller, flow rate transmitter and chemical or physical property analyzer. A remote system allows selective control of the flow controller.

Abstract: A real time additive processing system for crude oil or refined fuel products is coupled to a fuel transport line that transfers fuel from one storage tank to another storage tank. The fuel additive processing system includes a fuel additive storage tank coupled to a liquid conduit having a liquid pump with a speed/stroke controller that regulates the liquid pump. The liquid conduit is coupled to the fuel transport line at a fuel additive injection nozzle. The fuel additive processing system also includes a flow rate transmitter and a chemical or physical property analyzer coupled to the fuel transport line downstream of the additive injection nozzle. The fuel additive processing system includes a flow controller that communicates with the liquid pump speed/stroke controller, flow rate transmitter and chemical or physical property analyzer. A remote system allows selective control of the flow controller.

Abstract: A real time additive processing system for crude oil or refined fuel products is coupled to a fuel transport line that transfers fuel from one storage tank to another storage tank. The fuel additive processing system includes a fuel additive storage tank coupled to a liquid conduit having a liquid pump with a speed/stroke controller that regulates the liquid pump. The liquid conduit is coupled to the fuel transport line at a fuel additive injection nozzle. The fuel additive processing system also includes a flow rate transmitter and a chemical or physical property analyzer coupled to the fuel transport line downstream of the additive injection nozzle. The flow rate transmitter transmits the flow rate of the fuel passing through the fuel transport line. The fuel additive processing system includes a flow controller that communicates with the liquid pump speed/stroke controller, flow rate transmitter and chemical or physical property analyzer.

Abstract: According to one exemplary embodiment, a group III-V semiconductor device includes at least one transition layer situated over a substrate. The group III-V semiconductor device further includes a first strain-relieving interlayer situated over the at least one transition layer and a second strain-relieving interlayer situated over the first strain-relieving interlayer. The group III-V semiconductor device further includes a first group III-V semiconductor body situated over the second strain-relieving interlayer. The first and second strain-relieving interlayers comprise different semiconductor materials so as to reduce a strain in the first group III-V semiconductor body. The second strain-relieving interlayer can be substantially thinner than the first strain-relieving interlayer.

Abstract: Substrates may be bonded according to a method comprising contacting a first bonding surface of a first substrate with a second bonding surface of a second substrate to form an assembly, and compressing the assembly in the presence of an oxidizing atmosphere under suitable conditions to form a bonding layer between the first and second surfaces, wherein the first bonding surface comprises a polarized surface layer; the second bonding surface comprises a hydrophilic surface layer; the first and second bonding surfaces are different.

Abstract: According to one exemplary embodiment, a group III-V semiconductor device includes at least one transition layer situated over a substrate. The group III-V semiconductor device further includes a first strain-relieving interlayer situated over the at least one transition layer and a second strain-relieving interlayer situated over the first strain-relieving interlayer. The group III-V semiconductor device further includes a first group III-V semiconductor body situated over the second strain-relieving interlayer. The first and second strain-relieving interlayers comprise different semiconductor materials so as to reduce a strain in the first group III-V semiconductor body. The second strain-relieving interlayer can be substantially thinner than the first strain-relieving interlayer.

Abstract: According to one exemplary embodiment, a group III-V semiconductor device includes at least one transition layer situated over a substrate. The group III-V semiconductor device further includes a first strain-relieving interlayer situated over the at least one transition layer and a second strain-relieving interlayer situated over the first strain-relieving interlayer. The group III-V semiconductor device further includes a first group III-V semiconductor body situated over the second strain-relieving interlayer. The first and second strain-relieving interlayers comprise different semiconductor materials so as to reduce a strain in the first group III-V semiconductor body. The second strain-relieving interlayer can be substantially thinner than the first strain-relieving interlayer.

Abstract: Substrates may be bonded according to a method comprising contacting a first bonding surface of a first substrate with a second bonding surface of a second substrate to form an assembly, and compressing the assembly in the presence of an oxidizing atmosphere under suitable conditions to form a bonding layer between the first and second surfaces, wherein the first bonding surface comprises a polarized surface layer; the second bonding surface comprises a hydrophilic surface layer; the first and second bonding surfaces are different.

Abstract: According to one exemplary embodiment, a group III-V semiconductor device includes at least one transition layer situated over a substrate. The group III-V semiconductor device further includes a first strain-relieving interlayer situated over the at least one transition layer and a second strain-relieving interlayer situated over the first strain-relieving interlayer. The group III-V semiconductor device further includes a first group III-V semiconductor body situated over the second strain-relieving interlayer. The first and second strain-relieving interlayers comprise different semiconductor materials so as to reduce a strain in the first group III-V semiconductor body. The second strain-relieving interlayer can be substantially thinner than the first strain-relieving interlayer.

Abstract: According to one exemplary embodiment, a group III-V semiconductor device includes at least one transition layer situated over a substrate. The group III-V semiconductor device further includes a first strain-relieving interlayer situated over the at least one transition layer and a second strain-relieving interlayer situated over the first strain-relieving interlayer. The group III-V semiconductor device further includes a first group III-V semiconductor body situated over the second strain-relieving interlayer. The first and second strain-relieving interlayers comprise different semiconductor materials so as to reduce a strain in the first group III-V semiconductor body. The second strain-relieving interlayer can be substantially thinner than the first strain-relieving interlayer.

Abstract: According to one embodiment, a group III-V semiconductor device comprises a compositionally graded body disposed over a substrate and below a buffer layer supporting an active area of the group III-V semiconductor device. The compositionally graded body includes a first region applying compressive stress to the substrate. The compositionally graded body further includes a stress modulating region over the first region, where the stress modulating region applies tensile stress to the substrate. In one embodiment, a method for fabricating a group III-V semiconductor device comprises providing a substrate for the group III-V semiconductor device and forming a first region of a compositionally graded body over the substrate to apply compressive stress to the substrate. The method further comprises forming a stress modulating region of the compositionally graded body over the first region, where the stress modulating region applies tensile stress to the substrate.

Abstract: According to one exemplary embodiment, a group III-V semiconductor device includes at least one transition layer situated over a substrate. The group III-V semiconductor device further includes a first strain-relieving interlayer situated over the at least one transition layer and a second strain-relieving interlayer situated over the first strain-relieving interlayer. The group III-V semiconductor device further includes a first group III-V semiconductor body situated over the second strain-relieving interlayer. The first and second strain-relieving interlayers comprise different semiconductor materials so as to reduce a strain in the first group III-V semiconductor body. The second strain-relieving interlayer can be substantially thinner than the first strain-relieving interlayer.

Abstract: The invention pertains to the attachment of a wrenching nut to a metal conduit wherein torque forces can be applied to the conduit through the nut. An annular nut member is located upon a conduit and the conduit is radially deformed to force the conduit material into engagement with keying surfaces defined upon the nut. Conduit deformation occurs on both sides of the nut for axial positioning thereof, as well as establishing a torque transmitting relationship between the nut and conduit.

Abstract: The invention pertains to the attachment of a wrenching nut to a metal conduit wherein torque forces can be applied to the conduit through the nut. An annular nut member is located upon a conduit and the conduit is radially deformed to force the conduit material into engagement with keying surfaces defined upon the nut. Conduit deformation occurs on both sides of the nut for axial positioning thereof, as well as establishing a torque transmitting relationship between the nut and conduit.

Abstract: The invention pertains to a protective and decorative cap for the ends of hose lines, particularly for use with a worm gear type hose clamp. The cap includes a slot wherein the clamp enters the cap by axial displacement on the hose, and internally, the cap includes an annular hose cover retaining shoulder confining the hose cover against unraveling.