Abstract: A monolithically integrated system of silicon solar cells. A system having a silicon substrate and a plurality of solar cells formed on the silicon substrate. Each solar cell can have an emitter portion and a base portion. The system can also have a plurality of intermediate regions, each intermediate region having a polarity and electrically separating at least two portions of adjacent solar cells from one another such that the polarity of the intermediate region is opposite to a polarity of at least one of the separated portions of the adjacent solar cells.

Abstract: A method of hydrogenation of a silicon photovoltaic junction device is provided, the silicon photovoltaic junction device comprising p-type silicon semiconductor material and n-type silicon semiconductor material forming at least one p-n junction. The method comprises: i) ensuring that any silicon surface phosphorus diffused layers through which hydrogen must diffuse have peak doping concentrations of 1×1020 atoms/cm3 or less and silicon surface boron diffused layers through which hydrogen must diffuse have peak doping concentrations of 1×1019 atoms/cm3 or less; ii) Providing one or more hydrogen sources accessible by each surface of the device; and iii) Heating the device, or a local region of the device to at least 40° C.

Abstract: A method for creating an inwardly extending impurity distribution profile in a substrate comprising crystalline silicon material having a background doping of a first impurity type, comprising: a) providing one or more additional impurity sources with at least two different types of impurity atoms within the substrate or in proximity to the surface of the substrate, with each of these impurity atoms having different diffusion coefficients or segregation coefficients; b) locally melting a point on the surface of the substrate with a laser, whereby the at least two different types of impurity atoms are incorporated into the melted silicon material; c) removing the laser to allow the silicon material to recrystallize; d) controlling a rate of application and/or removal of the laser to control the creation of the impurity distribution profile, with different distribution profiles for each of the at least two types of impurity atoms in the recrystallized material.

Abstract: A method of hydrogenation of a silicon photovoltaic junction device is provided, the silicon photovoltaic junction device comprising p-type silicon semiconductor material and n-type silicon semiconductor material forming at least one p-n junction. The method comprises: i) ensuring that any silicon surface phosphorus diffused layers through which hydrogen must diffuse have peak doping concentrations of 1×1020 atoms/cm3 or less and silicon surface boron diffused layers through which hydrogen must diffuse have peak doping concentrations of 1×1019 atoms/cm3 or less; ii) Providing one or more hydrogen sources accessible by each surface of the device; and iii) Heating the device, or a local region of the device to at least 40° C.

Abstract: A method of hydrogenation of a silicon photovoltaic junction device is provided, the silicon photovoltaic junction device comprising p-type silicon semiconductor material and n-type silicon semiconductor material forming at least one p-n junction. The method comprises: i) ensuring that any silicon surface phosphorus diffused layers through which hydrogen must diffuse have peak doping concentrations of 1×1020 atoms/cm3 or less and silicon surface boron diffused layers through which hydrogen must diffuse have peak doping concentrations of 1×1019 atoms/cm3 or less; ii) Providing one or more hydrogen sources accessible by each surface of the device; and iii) Heating the device, or a local region of the device to at least 40° C.

Abstract: A method for creating an inwardly extending impurity distribution profile in a substrate comprising crystalline silicon material having a background doping of a first impurity type, comprising: a) providing one or more additional impurity sources with at least two different types of impurity atoms within the substrate or in proximity to the surface of the substrate, with each of these impurity atoms having different diffusion coefficients or segregation coefficients; b) locally melting a point on the surface of the substrate with a laser, whereby the at least two different types of impurity atoms are incorporated into the melted silicon material; c) removing the laser to allow the silicon material to recrystallise; d) controlling a rate of application and/or removal of the laser to control the creation of the impurity distribution profile, with different distribution profiles for each of the at least two types of impurity atoms in the recrystallised material.