Patents by Inventor Brett R. Schroeder

Brett R. Schroeder has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Treating surface of low-dielectric constant material to achieve good mechanical strength
    Patent number: 6930033
    Abstract: The present invention discloses a method including providing a substrate; forming a dielectric material over the substrate; forming an opening in the dielectric material; treating a surface of the dielectric material; forming a conductor in the opening; and planarizing the conductor. The present invention further discloses a structure including a substrate; a dielectric material located over the substrate, the dielectric material having a low dielectric constant; an opening located in the dielectric material; a treated layer located over a sidewall of the opening; and a conductor located in the opening and over the treated layer.
    Type: Grant
    Filed: December 17, 2003
    Date of Patent: August 16, 2005
    Assignee: Intel Corporation
    Inventors: Douglas B. Ingerly, Brett R. Schroeder
  • Treatment of low-k dielectric materials for CMP
    Publication number: 20040132281
    Abstract: The present invention discloses a method including providing a substrate; forming a dielectric material over the substrate; forming an opening in the dielectric material; treating a surface of the dielectric material; forming a conductor in the opening; and planarizing the conductor.
    Type: Application
    Filed: December 17, 2003
    Publication date: July 8, 2004
    Inventors: Douglas B. Ingerly, Brett R. Schroeder
  • Treatment of low-k dielectric material for CMP
    Patent number: 6717265
    Abstract: The present invention discloses a method including providing a substrate; forming a dielectric material over the substrate; forming an opening in the dielectric material; treating a surface of the dielectric material; forming a conductor in the opening; and planarizing the conductor. The present invention further discloses a structure including a substrate; a dielectric material located over the substrate, the dielectric material having a low dielectric constant; an opening located in the dielectric material; a treated layer located over a sidewall of the opening; and a conductor located in the opening and over the treated layer.
    Type: Grant
    Filed: November 8, 2002
    Date of Patent: April 6, 2004
    Assignee: Intel Corporation
    Inventors: Douglas B. Ingerly, Brett R. Schroeder