Patents by Inventor Brett Robert Schroeder

Brett Robert Schroeder has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240427308
    Abstract: A method includes receiving data indicative of a range of processing conditions associated with a plurality of substrate processing operations. The data indicative of the range of processing conditions includes a first range of values of a first property and a second range of values of a second property of the processing conditions. The method further includes receiving data indicative of processing performance associated with the plurality of processed substrates. The data includes a first set of data associated with a first indication of substrate performance and a second set of data associated with a second indication of substrate performance. The method further includes performing analysis relating the processing conditions to the processing performance. The method further includes generating a visualization presenting results of the analysis including representations of the first indication of substrate performance and the second indication of substrate performance.
    Type: Application
    Filed: June 23, 2023
    Publication date: December 26, 2024
    Inventors: Rituraj Nandan, Ramachandran Subramanian, Brett Robert Schroeder, Pardeep Kumar, Zhenxing Han, Martha Inez Sanchez, Bharath Ram Sundar, Madhur Singh Sachan, Sundar Narayanan
  • Patent number: 7071129
    Abstract: Adhesion between silicon nitride etch-stop layers and carbon doped oxide films may be improved by using plasma argon densification treatments of the carbon doped oxide films. The resulting surface layer of the carbon doped oxide films may be carbon-depleted and may include a relatively rough interface to improve the adhesion of deposited silicon nitride films.
    Type: Grant
    Filed: September 12, 2002
    Date of Patent: July 4, 2006
    Assignee: Intel Corporation
    Inventors: Chia-Hong Jan, Tracey Scherban, Ying Zhou, Adam Schafer, Brett Robert Schroeder
  • Publication number: 20040051176
    Abstract: Adhesion between silicon nitride etch-stop layers and carbon doped oxide films may be improved by using plasma argon densification treatments of the carbon doped oxide films. The resulting surface layer of the carbon doped oxide films may be carbon-depleted and may include a relatively rough interface to improve the adhesion of deposited silicon nitride films.
    Type: Application
    Filed: September 12, 2002
    Publication date: March 18, 2004
    Inventors: Chia-Hong Jan, Tracey Scherban, Ying Zhou, Adam Schafer, Brett Robert Schroeder