Abstract: Methods for designing, fabricating, and using attenuated phase shift reticles, or photomasks are disclosed. Methods are also disclosed for subdividing the radiation blocking regions of previously fabricated reticles of previously existing designs. The methods may include forming radiation blocking regions that are subdivided, by cut lines, into discrete, spaced apart sections with dimensions (e.g., surface area, etc.) configured to minimize or eliminate the buildup of electrostatic energy by the radiation blocking regions and/or the discharge of electrostatic energy from the radiation blocking regions and the damage that may be caused by such electrostatic discharge. The methods may include configuring the reticle to prevent radiation from passing through the cut lines between adjacent sections of a subdivided radiation blocking region.

Abstract: Methods for designing, fabricating, and using attenuated phase shift reticles, or photomasks are disclosed. Methods are also disclosed for subdividing the radiation blocking regions of previously fabricated reticles of previously existing designs. The methods may include forming radiation blocking regions that are subdivided, by cut lines, into discrete, spaced apart sections with dimensions (e.g., surface area, etc.) configured to minimize or eliminate the buildup of electrostatic energy by the radiation blocking regions and/or the discharge of electrostatic energy from the radiation blocking regions and the damage that may be caused by such electrostatic discharge. The methods may include configuring the reticle to prevent radiation from passing through the cut lines between adjacent sections of a subdivided radiation blocking region.

Abstract: Methods for designing, fabricating, and using attenuated phase shift reticles, or photomasks are disclosed. Methods are also disclosed for subdividing the radiation blocking regions of previously fabricated reticles of previously existing designs. The methods may include forming radiation blocking regions that are subdivided, by cut lines, into discrete, spaced apart sections with dimensions (e.g., surface area, etc.) configured to minimize or eliminate the buildup of electrostatic energy by the radiation blocking regions and/or the discharge of electrostatic energy from the radiation blocking regions and the damage that may be caused by such electrostatic discharge. The methods may include configuring the reticle to prevent radiation from passing through the cut lines between adjacent sections of a subdivided radiation blocking region.

Abstract: An attenuated phase shift reticle, or photomask, includes radiation blocking regions that are subdivided, by cut lines, into discrete, spaced apart sections with dimensions (e.g., surface area, etc.) that are configured to minimize or eliminate the buildup of electrostatic energy by the radiation blocking regions and/or the discharge of electrostatic energy from the radiation blocking regions and the damage that may be caused by such electrostatic discharge. The reticle may be configured to prevent radiation from passing through the cut lines between adjacent sections of a subdivided radiation blocking region. Methods for designing, fabricating, and using such masks are also disclosed, as are methods for subdividing the radiation blocking regions of previously fabricated reticles of previously existing designs.

Abstract: The present invention provides an attenuated phase shift mask (“APSM”) that, in each embodiment, includes completely transmissive regions sized and shaped to define desired semiconductor device features, slightly attenuated regions at the edges of the completely transmissive regions corresponding to isolated device features, highly attenuated regions at the edges of completely transmissive regions corresponding to closely spaced or nested device features, and completely opaque areas where it is desirable to block transmission of all radiation through the APSM. The present invention further provides methods for fabricating the APSMs according to the present invention.

Abstract: A method for removing impurities (e.g., atomic sulfur) from a reticle for use in photolithography is provided. In one embodiment, a reticle (or photomask) comprising a plate, a first layer over the plate, and a photoresist layer over the first layer is provided. The photoresist layer is removed with a first chemistry comprising a sulfur-containing compound. At least a portion of the first layer is removed with a second chemistry comprising a sulfur-containing etchant, thereby exposing portions of the plate. Removing the photoresist layer and/or at least a portion of the first layer leaves sulfur on at least portions of the reticle. In a cleaning step, the reticle is contacted with one or more excited species of oxygen to remove residual sulfur and other contaminants, such as carbon, sulfur and oxygen-containing species. Methods of embodiments can be used to clean, e.g., binary photomasks, attenuated phase shift masks (APSMs) and high transmission attenuated photomasks.

Abstract: An attenuated phase shift reticle, or photomask, includes radiation blocking regions that are subdivided, by cut lines, into discrete, spaced apart sections with dimensions (e.g., surface area, etc.) that are configured to minimize or eliminate the buildup of electrostatic energy by the radiation blocking regions and/or the discharge of electrostatic energy from the radiation blocking regions and the damage that may be caused by such electrostatic discharge. The reticle may be configured to prevent radiation from passing through the cut lines between adjacent sections of a subdivided radiation blocking region. Methods for designing, fabricating, and using such masks are also disclosed, as are methods for subdividing the radiation blocking regions of previously fabricated reticles of previously existing designs.

Abstract: The present invention provides an attenuated phase shift mask (“APSM”) that, in each embodiment, includes completely transmissive regions sized and shaped to define desired semiconductor device features, slightly attenuated regions at the edges of the completely transmissive regions corresponding to isolated device features, highly attenuated regions at the edges of completely transmissive regions corresponding to closely spaced or nested device features, and completely opaque areas where it is desirable to block transmission of all radiation through the APSM. The present invention further provides methods for fabricating the APSMs according to the present invention.

Abstract: The present invention provides an attenuated phase shift mask (“APSM”) that, in each embodiment, includes completely transmissive regions sized and shaped to define desired semiconductor device features, slightly attenuated regions at the edges of the completely transmissive regions corresponding to isolated device features, highly attenuated regions at the edges of completely transmissive regions corresponding to closely spaced or nested device features, and completely opaque areas where it is desirable to block transmission of all radiation through the APSM. The present invention further provides methods for fabricating the APSMs according to the present invention.

Abstract: The invention includes methods of converting reticles from configurations suitable for utilization with later generation (shorter wavelength) stepper radiations to configurations suitable for utilization with earlier generation (longer wavelength) stepper radiations. The invention can be utilized for converting a reticle from a configuration suitable for 193 nanometer wavelength radiation to a configuration suitable for 248 nanometer wavelength radiation. In such aspect, a quartz-containing material of a substrate can be protected with a patterned layer consisting essentially of molybdenum and silicon while the quartz-containing material is subjected to a dry etch.

Abstract: The invention includes a semiconductor construction having a wire bonding region associated with a metal-containing layer, and having radiation-imageable material over the metal-containing layer. The radiation-imageable material can be configured as a multi-level pattern having a first topographical region with a first elevational height and a second topographical region with a second elevational height above the first elevational height. The second topographical region can be laterally displaced from the bonding region by at least a lateral width of the first topographical region, with said lateral width being at least about 10 microns. Additionally, or alternatively, the elevational height of the second topographical region can be at least about 2 microns above the elevational height of the first topographical region.

Abstract: The invention includes reticles and methods of forming reticles. In one aspect, a reticle can include a quartz-containing substrate, an attenuating layer, and an antireflective structure between the attenuating layer and the quartz-containing substrate. The invention can also include a reticle having a relatively transparent region between first and second surfaces, a relatively opaque region proximate the first surface, and a layer comprising one or both of metal fluoride and hafnium oxide proximate the first or second surface. The invention can also include methods of forming reticles in which an antireflective structure is formed over a surface of a quartz-containing substrate. The antireflective structure can comprise a Fabry-Perot pair, and in some aspects can comprise a layer containing one or both of metal fluoride and hafnium oxide.

Abstract: The invention includes reticles and methods of forming reticles. In one aspect, a reticle can include a quartz-containing substrate, an attenuating layer, and an antireflective structure between the attenuating layer and the quartz-containing substrate. The invention can also include a reticle having a relatively transparent region between first and second surfaces, a relatively opaque region proximate the first surface, and a layer comprising one or both of metal fluoride and hafnium oxide proximate the first or second surface. The invention can also include methods of forming reticles in which an antireflective structure is formed over a surface of a quartz-containing substrate. The antireflective structure can comprise a Fabry-Perot pair, and in some aspects can comprise a layer containing one or both of metal fluoride and hafnium oxide.

Abstract: A method for removing impurities (e.g., atomic sulfur) from a reticle for use in photolithography is provided. In one embodiment, a reticle (or photomask) comprising a plate, a first layer over the plate, and a photoresist layer over the first layer is provided. The photoresist layer is removed with a first chemistry comprising a sulfur-containing compound. At least a portion of the first layer is removed with a second chemistry comprising a sulfur-containing etchant, thereby exposing portions of the plate. Removing the photoresist layer and/or at least a portion of the first layer leaves sulfur on at least portions of the reticle. In a cleaning step, the reticle is contacted with one or more excited species of oxygen to remove residual sulfur and other contaminants, such as carbon, sulfur and oxygen-containing species. Methods of embodiments can be used to clean, e.g., binary photomasks, attenuated phase shift masks (APSMs) and high transmission attenuated photomasks.

Abstract: A method to provide a ground point for second, or subsequent, e-beam mask-writing steps by selectively removing the photoresist edge bead of a photomask substrate to expose the underlying chrome layer. The selective removal leaves at least one tab of photoresist edge bead over the chrome layer. After the first e-beam mask writing step and subsequent etch, the tab can be removed to expose a portion of the chromium layer that can act as a new ground point for a second e-beam etch. Also, a nozzle for use in selectively removing the edge bead to leave a tab of photoresist edge bead.

Abstract: The invention includes a semiconductor construction having a wire bonding region associated with a metal-containing layer, and having radiation-imageable material over the metal-containing layer. The radiation-imageable material can be configured as a multi-level pattern having a first topographical region with a first elevational height and a second topographical region with a second elevational height above the first elevational height. The second topographical region can be laterally displaced from the bonding region by at least a lateral width of the first topographical region, with said lateral width being at least about 10 microns. Additionally, or alternatively, the elevational height of the second topographical region can be at least about 2 microns above the elevational height of the first topographical region.

Abstract: The present invention provides an attenuated phase shift mask (“APSM”) that, in each embodiment, includes completely transmissive regions sized and shaped to define desired semiconductor device features, slightly attenuated regions at the edges of the completely transmissive regions corresponding to isolated device features, highly attenuated regions at the edges of completely transmissive regions corresponding to closely spaced or nested device features, and completely opaque areas where it is desirable to block transmission of all radiation through the APSM. The present invention further provides methods for fabricating the APSMs according to the present invention.

Abstract: The invention includes methods of converting reticles from configurations suitable for utilization with later generation (shorter wavelength) stepper radiations to configurations suitable for utilization with earlier generation (longer wavelength) stepper radiations. The invention can be utilized for converting a reticle from a configuration suitable for 193 nanometer wavelength radiation to a configuration suitable for 248 nanometer wavelength radiation. In such aspect, a quartz-containing material of a substrate can be protected with a patterned layer consisting essentially of molybdenum and silicon while the quartz-containing material is subjected to a dry etch.

Abstract: In one aspect, the invention includes a semiconductor processing method, comprising: a) providing a silicon nitride material having a surface; b) forming a barrier layer over the surface of the material, the barrier layer comprising silicon and nitrogen; and c) forming a photoresist over and against the barrier layer.

Abstract: A method of masking and etching a semiconductor substrate includes forming a layer to be etched over a semiconductor substrate. An imaging layer is formed over the layer to be etched. Selected regions of the imaging layer are removed to leave a pattern of openings extending only partially into the imaging layer. After the removing, the layer to be etched is etched using the imaging layer as an etch mask. In one implementation, an ion implant lithography method of processing a semiconductor includes forming a layer to be etched over a semiconductor substrate. An imaging layer of a selected thickness is formed over the layer to be etched. Selected regions of the imaging layer are ion implanted to change solvent solubility of implanted regions versus non-implanted regions of the imaging layer, with the selected regions not extending entirely through the imaging layer thickness.