Patents by Inventor Brett Z. Nosho
Brett Z. Nosho has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11749705Abstract: A simultaneous dual-band image sensor having a plurality of pixels includes a substrate, a common ground on the substrate, wherein each pixel includes a Band 1 absorber layer on the common ground layer, a barrier layer on the Band 1 absorber layer, a Band 2 absorber layer on the barrier layer, a ring opening in the pixel formed by a removed portion of the Band 2 absorber layer, a removed portion of the barrier layer and a removed portion of the Band 1 absorber layer, wherein the ring opening does not extend through the Band 1 absorber layer, a first contact on a portion of the Band 2 absorber layer inside the ring, and a second contact on a portion of the Band 2 absorber layer outside the ring. The Band 1 absorber layer and the Band 2 absorber layer are n-type, or the Band 1 absorber layer and the Band 2 absorber layer are p-type.Type: GrantFiled: January 24, 2022Date of Patent: September 5, 2023Assignee: HRL LABORATORIES, LLCInventors: Minh B. Nguyen, Brett Z. Nosho
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Patent number: 11604095Abstract: A hyperspectral imager (HSI) includes a first thin film filter, the first thin film filter including a first quarter wave mirror, a second quarter wave mirror, and a low-refractive-index wedge between the first quarter wave mirror and the second quarter wave mirror. The low-refractive-index wedge has a height dimension such that a distance between the first quarter wave mirror and the second quarter wave mirror increases linearly along a length of the low-refractive-index wedge.Type: GrantFiled: May 13, 2020Date of Patent: March 14, 2023Assignee: HRL LABORATORIES, LLCInventors: Shuoqin Wang, Joseph Nedy, Brett Z. Nosho, Minh B. Nguyen
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Publication number: 20220149107Abstract: A simultaneous dual-band image sensor having a plurality of pixels includes a substrate, a common ground on the substrate, wherein each pixel includes a Band 1 absorber layer on the common ground layer, a barrier layer on the Band 1 absorber layer, a Band 2 absorber layer on the barrier layer, a ring opening in the pixel formed by a removed portion of the Band 2 absorber layer, a removed portion of the barrier layer and a removed portion of the Band 1 absorber layer, wherein the ring opening does not extend through the Band 1 absorber layer, a first contact on a portion of the Band 2 absorber layer inside the ring, and a second contact on a portion of the Band 2 absorber layer outside the ring. The Band 1 absorber layer and the Band 2 absorber layer are n-type, or the Band 1 absorber layer and the Band 2 absorber layer are p-type.Type: ApplicationFiled: January 24, 2022Publication date: May 12, 2022Applicant: HRL Laboratories, LLCInventors: Minh B. NGUYEN, Brett Z. NOSHO
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Patent number: 11282887Abstract: A simultaneous dual-band image sensor having a plurality of pixels includes a substrate, a common ground on the substrate, wherein each pixel includes a Band 1 absorber layer on the common ground layer, a barrier layer on the Band 1 absorber layer, a Band 2 absorber layer on the barrier layer, a ring opening in the pixel formed by a removed portion of the Band 2 absorber layer, a removed portion of the barrier layer and a removed portion of the Band 1 absorber layer, wherein the ring opening does not extend through the Band 1 absorber layer, a first contact on a portion of the Band 2 absorber layer inside the ring, and a second contact on a portion of the Band 2 absorber layer outside the ring. The Band 1 absorber layer and the Band 2 absorber layer are n-type, or the Band 1 absorber layer and the Band 2 absorber layer are p-type.Type: GrantFiled: January 30, 2020Date of Patent: March 22, 2022Assignee: HRL Laboratories, LLCInventors: Minh B. Nguyen, Brett Z. Nosho
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Patent number: 11158754Abstract: A structure is disclosed. The structure contains a second detector disposed above a first detector, wherein the first detector contains a first absorber layer, a first barrier layer disposed above the first absorber layer, a first contact layer disposed above the first barrier layer, and wherein the second detector contains a second contact layer disposed above the first contact layer, a second barrier layer disposed above the second contact layer, a second absorber layer disposed above the second barrier layer.Type: GrantFiled: August 8, 2014Date of Patent: October 26, 2021Assignee: HRL Laboratories, LLCInventors: Pierre-Yves Delaunay, Brett Z. Nosho, Hasan Sharifi
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Patent number: 11094736Abstract: A device and method of manufacturing are disclosed. The device contains a buffer layer containing a first material, a detector structure disposed above the buffer layer, a readout integrated circuit coupled with the detector structure, a layer above the readout integrated circuit comprising a second material, and a silicon layer above the layer.Type: GrantFiled: November 5, 2015Date of Patent: August 17, 2021Assignee: HRL Laboratories, LLCInventors: Brett Z. Nosho, Pierre-Yves Delaunay
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Publication number: 20200328247Abstract: A simultaneous dual-band image sensor having a plurality of pixels includes a substrate, a common ground on the substrate, wherein each pixel includes a Band 1 absorber layer on the common ground layer, a barrier layer on the Band 1 absorber layer, a Band 2 absorber layer on the barrier layer, a ring opening in the pixel formed by a removed portion of the Band 2 absorber layer, a removed portion of the barrier layer and a removed portion of the Band 1 absorber layer, wherein the ring opening does not extend through the Band 1 absorber layer, a first contact on a portion of the Band 2 absorber layer inside the ring, and a second contact on a portion of the Band 2 absorber layer outside the ring. The Band 1 absorber layer and the Band 2 absorber layer are n-type, or the Band 1 absorber layer and the Band 2 absorber layer are p-type.Type: ApplicationFiled: January 30, 2020Publication date: October 15, 2020Applicant: HRL Laboratories, LLCInventors: Minh B. NGUYEN, Brett Z. NOSHO
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Patent number: 9748427Abstract: The invention describes a device which enables MWIR photodetectors to operate at zero bias and deliver low dark current performance. The performance is achieved by incorporating a p-n junction in the barrier. The device consists of a p-type contact layer, a p-n junction in the compound barrier (CB) with graded composition and/or doping profiles, and an n-type absorber (p-CB-n) device.Type: GrantFiled: October 31, 2013Date of Patent: August 29, 2017Assignee: HRL Laboratories, LLCInventors: Rajesh D Rajavel, Hasan Sharifi, Terence J De Lyon, Pierre-Yves Delaunay, Brett Z Nosho
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Patent number: 9064992Abstract: A dual-band infrared detector structure based on Type-II superlattices (T2SL) has been developed and experimentally validated. The structure according to the principles of the present invention is designed for a single Indium bump architecture and utilizes a T2SL barrier design that omits the traditional p-n junction region. The barrier design comprises multiple periods where each period comprises multiple monolayers doped P type. By selecting the composition, number of monolayers per period and number of periods, a transition region is created in the conduction band between a first absorber layer and a second absorber layer that allows operation at low biases (<100 mV for both bands) and exhibits a dark current density in the longer wavelength band comparable to that obtained with single-color detectors.Type: GrantFiled: August 14, 2014Date of Patent: June 23, 2015Assignee: HRL Laboratories, LLCInventors: Brett Z Nosho, Rajesh D Rajavel, Hasan Sharifi, Sevag Terterian
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Patent number: 8847202Abstract: A dual-band infrared detector structure based on Type-II superlattices (T2SL) has been developed and experimentally validated. The structure according to the principles of the present invention is designed for a single Indium bump architecture and utilizes a T2SL barrier design that omits the traditional p-n junction region. The barrier design comprises multiple periods where each period comprises multiple monolayers doped P type. By selecting the composition, number of monolayers per period and number of periods, a transition region is created in the conduction band between a first absorber layer and a second absorber layer that allows operation at low biases (<100 mV for both bands) and exhibits a dark current density in the longer wavelength band comparable to that obtained with single-color detectors.Type: GrantFiled: January 17, 2012Date of Patent: September 30, 2014Assignee: HRL Laboratories, LLCInventors: Brett Z. Nosho, Rajesh D. Rajavel, Hasan Sharifi, Sevag Terterian