Abstract: A protection device is provided that exhibits a turn on time of order of one nanosecond or less. Such a device provides enhanced protection for integrated circuits against electrostatic discharge events. This in turn reduces the risk of device failure in use. The protection device can include a bipolar transistor structure connected between a node to be protected and a discharge path.

Abstract: A protection device is provided that exhibits a turn on time of order of one nanosecond or less. Such a device provides enhanced protection for integrated circuits against electrostatic discharge events. This in turn reduces the risk of device failure in use. The protection device can include a bipolar transistor structure connected between a node to be protected and a discharge path.

Abstract: A voltage regulator receives an unregulated DC input voltage supply and provides a regulated DC output voltage. A primary pass element and an external resistor are located in a primary current path through which a load current flows from the input terminal to the output terminal. The voltage regulator includes two control circuits that control the impedances of two pass elements. Power dissipation can be improved and the dropout voltage can be reduced by maintaining the voltage on an internal node of the voltage regulator.

Abstract: Bi-directional blocking voltage protection devices and methods of forming the same are disclosed. In one embodiment, a protection device includes an n-well and first and second p-wells disposed on opposite sides of the n-well. The first p-well includes a first P+ region and a first N+ region and the second p-well includes a second P+ region and second N+ region. The device further includes a third P+ region disposed along a boundary of the n-well and the first p-well and a fourth P+ region disposed along a boundary of the n-well and the second p-well. A first gate is disposed between the first N+ region and the third P+ region and a second gate is disposed between the second N+ region and the fourth P+ region. The device provides bi-directional blocking voltage protection during high energy stress events, including in applications operating at very low to medium swing voltages.

Abstract: Bi-directional blocking voltage protection devices and methods of forming the same are disclosed. In one embodiment, a protection device includes an n-well and first and second p-wells disposed on opposite sides of the n-well. The first p-well includes a first P+ region and a first N+ region and the second p-well includes a second P+ region and second N+ region. The device further includes a third P+ region disposed along a boundary of the n-well and the first p-well and a fourth P+ region disposed along a boundary of the n-well and the second p-well. A first gate is disposed between the first N+ region and the third P+ region and a second gate is disposed between the second N+ region and the fourth P+ region. The device provides bi-directional blocking voltage protection during high energy stress events, including in applications operating at very low to medium swing voltages.

Abstract: A voltage regulator receives an unregulated DC input voltage supply and provides a regulated DC output voltage. A primary pass element and an external resistor are located in a primary current path through which a load current flows from the input terminal to the output terminal. The voltage regulator includes two control circuits that control the impedances of two pass elements. Power dissipation can be improved and the dropout voltage can be reduced by maintaining the voltage on an internal node of the voltage regulator.

Abstract: An output stage interface circuit (50) implemented on a P-substrate comprises a first substrate diffusion isolated main NMOS transistor (MN1) coupling a data output terminal (5) to a first rail (2) which is held at ground, and a second main PMOS transistor MP2 coupling the data output terminal (5) to a second rail (3) to which the power supply voltage VDD is applied. First and second data control signals on first and second data control lines (8) and (9) through first and second primary and secondary buffer circuits (11, 14, 12, 15) selectively operate the first main transistor MN1 and the second main transistor MP2 for determining the logic high and low states of the data output terminal (5).

Abstract: An input protection device is provided for protecting a circuit structure which is coupled to a first node, the device comprising a first lightly-doped region of P-type material with a lightly doped well of N-type material formed in it. Two regions of heavily doped N-type and P-type material, which are electrically connected to the first node, are formed in the well of N-type material. A third heavily doped region of N type material is formed in the first lightly-doped region of P-type material and is electrically connected to a reference node. In a first aspect of this invention, the third heavily doped region of N type material is formed in a second well of N-type material, which in turn is formed in the first lightly-doped region of P-type material. In this first aspect of the invention a further region of heavily doped P-type material is formed in the second well of N-type material, this further region of heavily doped P-type material being electrically connected to the reference node.