Abstract: A bonded bubble memory device includes a non-magnetic first substrate, a thin film layer of magnetic material located on a planar surface of the first substrate, the layer being adapted to sustain cylindrical wall magnetic domains, a second substrate made of a non-magnetic and non-conductive material, a desired pattern of magnetic elements and electrically conductive elements deposited on a planar surface of the second substrate, the pattern including at least three spaced points, the heights of which are equal and predetermined, the thin film layer on the first substrate being in contact with the spaced points on the second substrate so that a controlled spacing is maintained between the thin film layer and the pattern of magnetic elements. A cement composition is applied to portions of the space between the substrates to hold the substrates in a juxtaposed orientation. Advantageous methods of producing the device are also described.