Abstract: Techniques to provide haptic feedback to a patient to help the patient align a medical device to a location on their anatomy. In some examples, the patient may align a recharging device to a medical device that is implanted at the location on their anatomy. In some examples, the electrical stimulation can be delivered in such a way that the patient may or may not be able to feel the electrical stimulation, e.g., experience a paresthesia sensation. The system of this disclosure may intentionally adjust the stimulation intensity to provide patient feedback for alignment, such as alignment of the recharging device with the implanted device. Alignment of the recharging device with the implanted device may improve energy transfer, which may, for example, recharge the implanted device more efficiently.

Abstract: A neurostimulation device, external programmer, or remote programming device may receive blood flow information relating to blood flow values from one or more blood flow sensing devices, either directly or via network connections, and perform, direct or control, based on the blood flow information, generation of neurostimulation efficacy information, information to assist in programming of one or more neurostimulation parameter, and/or automatic control of one or more neurostimulation stimulation parameters.

Abstract: Disclosed is a bone compression plate system comprising a substantially elongated first plate having a bone attachment portion and a anchoring portion, the bone attachment portion comprising one or more holes adapted to receive screws for attachment to a bone, the anchoring portion comprising a compression anchor; a substantially elongated second plate having a bone attachment portion and a anchoring portion, the bone attachment portion comprising one or more holes adapted to receive screws for attachment to a bone, the anchoring portion comprising a compression anchor; and a compression screw comprising a male component and a female component, each of the male and female components comprising a head, a shaft, and a tip, the tip of the male component adapted for threaded engagement with the tip of the female component, the head of the male component adapted to engage into, and be retained by the compression anchor in the first plate, and the head of the component adapted to engage into, and be retained by the

Abstract: An orthopedic implant device and system support the fusion of bones in the medial column of the human foot. An exemplary implant uses an improved lag screw and supplemental components, including a washer plate and transverse screws which penetrate transverse through holes in the shaft of the lag screw. Additionally, a surgical procedure is described which may employ such an implant. The improved lag screw may be inserted at the plantar surface of the first metatarsal and support the fusion of, for example, the transverse tarsal joint, the cuneonavicular joint, and the tarsometatarsal joint.

Abstract: An orthopedic implant device and system support the fusion of bones in the medial column of the human foot. An exemplary implant uses an improved lag screw and supplemental components, including a washer plate and transverse screws which penetrate transverse through holes in the shaft of the lag screw. Additionally, a surgical procedure is described which may employ such an implant. The improved lag screw may be inserted at the plantar surface of the first metatarsal and support the fusion of, for example, the transverse tarsal joint, the cuneonavicular joint, and the tarsometatarsal joint.

Abstract: Methods of forming microelectronic structures using multilayer processes are disclosed. The methods comprise the use of a developer-soluble protective layer adjacent the substrate surface in a multilayer stack to protect the substrate during pattern transfer. After etching, the pattern is transferred into the developer-soluble protective layer using a developer instead of etching required by previous methods. Conventional developer-soluble anti-reflective coatings and gap-fill materials can be used to form the protective layer. Custom layers with developer solubility can also be prepared. Microelectronic structures formed by the above processes are also disclosed.

Abstract: Methods of forming microelectronic structures using multilayer processes are disclosed. The methods comprise the use of a developer-soluble protective layer adjacent the substrate surface in a multilayer stack to protect the substrate during pattern transfer. After etching, the pattern is transferred into the developer-soluble protective layer using a developer instead of etching required by previous methods. Conventional developer-soluble anti-reflective coatings and gap-fill materials can be used to form the protective layer. Custom layers with developer solubility can also be prepared. Microelectronic structures formed by the above processes are also disclosed.

Abstract: Exemplary embodiments provide IC CMOS devices having dual stress layers and methods for their manufacture using a buffer layer stack between the two types of the stress layers. The buffer layer stack can include multiple buffer layers formed between a first type stress layer (e.g., a tensile stress layer) and a second type stress layer (e.g., a compressive stress layer) during the CMOS fabrication. Specifically, the buffer layer stack can be formed after the etching process of the first type stress layer but prior to the etching process of the second type stress layer, and thus to protect the etched first type stress layer during the subsequent etching process of the overlaid second type stress layer. In addition, a portion of the buffer layer stack can be formed between, for example, the compressive stress layer and the underlying PMOS device to enhance their adhesion.

Abstract: The present invention provides a process of manufacturing an isolation structure for use in a semiconductor device. The process includes forming an opening in a substrate through a patterned photoresist layer 225 and a hardmask layer 215 located over the substrate 205 with plasma, trimming the photoresist layer 225 with a plasma to create an exposed portion 215a of the hardmask layer 215, removing the exposed portion 215a with a plasma to create a trench guide opening 227, and creating a trench 230 through the trench guide opening 227 with a plasma.

Abstract: System for dynamically tracking a position of a target with an antenna in a communication system. The system includes an antenna system (410) configured for generating a sum and difference antenna pattern (201-1, 201-2). A sum RF channel (401) is coupled to a sum channel output of the antenna system. A difference RF channel (402) is coupled to a difference channel output of the antenna system. An RF coupler (422-1) is provided that has a first input coupled to the sum RF channel and a second input coupled to the RF difference channel. One or more coupling control devices (418-1, 418-2) selectively vary an effective coupling value as between the difference channel and the sum channel. An antenna tracking error signal is generated at an output of the coupler.

Abstract: A method of forming a gate electrode (24?) for a metal-oxide-semiconductor (MOS) integrated circuit is disclosed. A hardmask layer (26), for example formed of silicon-rich nitride, is deposited over a polysilicon layer (24) from which the gate electrode (24?) is to be formed. An anti-reflective coating, or bottom anti-reflective coating or BARC, layer (29) is then formed over the hardmask layer (26), and photoresist (30) is photolithographically patterned to define the pattern of the gate electrode (24?), although to a wider, photolithographic, width (LW). The pattern is transferred from the photoresist (30) to the BARC layer (29). The remaining elements of the BARC layer (29) are then trimmed, preferably by a timed isotropic etch, to a sub-lithographic width (SW). This pattern is then transferred to the hardmask layer (26) by an anisotropic etch of that layer, using the trimmed BARC elements (29) as a mask.

Abstract: A method (100) of forming a transistor includes forming a gate structure (106, 108) over a semiconductor body and forming recesses (112) substantially aligned to the gate structure in the semiconductor body. Silicon germanium is then epitaxially grown (114) in the recesses, followed by forming sidewall spacers (118) over lateral edges of the gate structure. The method continues by implanting source and drain regions in the semiconductor body (120) after forming the sidewall spacers. The silicon germanium formed in the recesses resides close to the transistor channel and serves to provide a compressive stress to the channel, thereby facilitating improved carrier mobility in PMOS type transistor devices.

Abstract: An apparatus and method for controlling the plasma potential of a plasma within a plasma chamber (50) is disclosed. The apparatus and method utilize a Faraday shielded inductive source antenna (60) to generate the plasma within the plasma chamber (50) and an electrically conductive probe (100) that is inserted into the plasma chamber (50) to regulate the plasma potential. By independent biasing of the conductive probe (100), which regulates the plasma potential, the ion energy distribution at a conductive substrate (150) within the plasma chamber (50) may be controlled.

Abstract: This invention relates to a new and distinct fall bearing red raspberry cultivar named `Caroline` which is capable of producing a large amount of larger, more flavorful and more cohesive fruit on primocanes 1-3 weeks earlier than standard cultivars. The cultivar is characterized by its moderate to high suckering ability, its conic, smooth and symmetrical fruit. Additionally, its thorn characteristics and its upright canes with fall fruit appearing on the upper half of the cane.

Abstract: This invention relates to a new and distinct spring bearing red raspberry cultivar named `Lauren` which is capable of producing large fruit of floricanes that ripen 1 to 3 weeks earlier than `Titan`, the only other large fruited cultivar grown in the eastern United States, and several days to weeks earlier than most standard cultivars currently in widespread use. The cultivar is characterized by its moderate suckering ability, its conic, smooth and symmetrical fruit. Additionally, its canes are upright and vigorous, and it does not normally produce a fall crop.