Abstract: The present invention provides methods for the preparation of compounds of the formula (Formula I):L.sub.y M(CO).sub.zwherein M is Ru or Os, each L is independently a neutral ligand, y=1-4, and z=1-5. These methods involve the reaction of Ru.sub.3 (CO).sub.12 or Os.sub.3 (CO).sub.12 with a neutral ligand in a solvent system having a boiling point higher than that of benzene at atmospheric pressure.

Abstract: A method of forming on a substrate a metal film, comprising depositing said metal film on said substrate via chemical vapor deposition from a metalorganic complex of the formula:MA.sub.Y Xwherein:M is a y-valent metal;A is a monodentate or multidentate organic ligand coordinated to M which allows complexing of MA.sub.y with X;y is an integer having a value of 2, 3 or 4; each of the A ligands may be the same or different; andX is a monodentate or multidentate ligand coordinated to M and containing one or more atoms independently selected from the group consisting of atoms of the elements C, N, H, S, O and F.The metal M may be selected from the group consisting of Cu, Ba, Sr, La, Nd, Ce, Pr, Sm, Eu, Th, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Bi, Tl, Y, Pb, Ni, Pd, Pt, Al, Ga, In, Ag, Au, Co, Rh, Ir, Fe, Ru, Sn, Li, Na, K, Rb, Cs, Ca, Mg, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, and W. A may be selected from the group consisting of .beta.-diketonates, .beta.

Abstract: A composition for use in processing and cleaning substrates includes a compound of the formula (I): R.sup.1 --C(O)--NR.sup.2 --[(CR.sup.3 R.sup.4).sub.x --N--R.sup.5 ].sub.y --[C(O)].sub.z --R.sup.6, wherein each of R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5, and R.sup.6 is independently H or an organic group, x=1-10, y=0-10, and z=0-1. The compound of Formula I is preparable by a condensation reaction of a carboxylic acid and an amine. A method of processing a substrate includes, for example, planarizing the substrate surface with a processing composition comprising a compound of Formula I. A method of cleaning a substrate and processing equipment after, for example, planarizing a substrate surface with an abrasive material includes cleaning the substrate surface and processing equipment with the cleaning composition.

Abstract: The invention includes methods of patterning substrates. In one implementation, an electrically conductive etch mask layer is formed over a substrate. A resist layer, for example photoresist, is formed over the etch mask layer. The etch mask layer is etched into through an opening formed in the patterned resist. The etching preferably comprises dry etching within a dual source, high density plasma etcher using an oxygen containing gas. Substrate layers beneath the electrically conductive base layer are preferably etched through one or more openings formed in the conductive layer at least in part by the preferred dry etching. The etch mask layer and resist are ultimately removed from the substrate.

Abstract: The present invention provides methods for the preparation of ruthenium metal films from liquid ruthenium complexes of the formula (diene)Ru(CO).sub.3 wherein "diene" refers to linear, branched, or cyclic dienes, bicyclic dienes, tricyclic dienes, fluorinated derivatives thereof, derivatives thereof additionally containing heteroatoms such as halide, Si, S, Se, P, As, N, or 0, or combinations thereof.

Abstract: A method is provided for forming a film of ruthenium or ruthenium oxide on the surface of a substrate by employing the techniques of chemical vapor deposition to decompose precursors of ruthenium having the formula: L.sub.y RuX.sub.z where L is a neutral or monoanionic ligand selected from the group consisting essentially of linear hydrocarbyls, branched hydrocarbyls, cyclic hydrocarbyls, cyclic alkenes, dienes, cyclic dienes, trienes, cyclic trienes, bicyclic alkenes, bicyclic dienes, bicyclic trienes, tricyclic alkenes, tricyclic dienes, tricyclic trienes; fluorinated derivatives thereof; derivatives thereof additionally containing heteroatoms such as a halide, Si, S, Se, P, As, N or O; and combinations thereof; where X is a pi-bonding ligand selected from the group consisting of CO, NO, CN, CS, nitriles, isonitriles, trialkylphosphines, trialkylphosphites, trialkylamines, and isocyanide, and where subscripts y and z have a value of from one (1) to three (3); or L.sub.1 Ru(CO).sub.

Abstract: Compositions and methods for processing (e.g., cleaning) substrates, such as semiconductor-based substrates, as well as processing equipment, include one or more compounds of Formula (I): ##STR1## wherein each R.sup.1, R.sup.2, R.sup.3, and R.sup.4 is independently H or an organic group.

Abstract: A method of forming a film on a substrate using, Group III metal complexes, including Group IIIA metals and Group IIIB metals, which include the lanthanides. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems.

Abstract: A method of forming a film on a substrate using chemical vapor deposition techniques and carboxylate complexes. The complexes and method are particularly suitable for the preparation of semiconductor structures.

Abstract: The present invention provides methods for the preparation of compounds of the formula (Formula I):L.sub.y M(CO).sub.zwherein M is Ru or Os, each L is independently a neutral ligand, y=1-4, and z=1-5. These methods involve the reaction of Ru.sub.3 (CO).sub.12 or Os.sub.3 (CO).sub.12 with a neutral ligand in a solvent system having a boiling point higher than that of benzene at atmospheric pressure.

Abstract: An MOCVD precursor composition useful for MOCVD formation of a non-linear optically active metal borate thin film, comprising: (I) an organometallic source reagent for a metal reactively forming a non-linear optically active metal borate, and (II) an organoborate compound of the formula: B(OR).sub.3, wherein each R is independently selected from H, alkyl, aryl, alkaryl, arylalkyl, alkenyl, fluoroalkyl, fluoroaryl, fluoroaralkyl, fluoroalkaryl, trialkylsilyl, and C.sub.5 -C.sub.8 carbocylic groups, as the aforementioned borate source reagent. Such composition may be employed for forming a non-linear optically active metal borate thin film on a substrate, via depositing by CVD on said substrate a metal from the organometallic source reagent and a borate from the organoborate compound, to react the metal with the borate and yield the non-linear optically active metal borate on the substrate.

Abstract: A method of forming a film on a substrate using Group III metal complexes. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems.

Abstract: A method of forming a thin film of BaSrTiO.sub.3 on a substrate in a chemical vapor deposition zone, with transport of a metal precursor composition for the metal-containing film to the chemical vapor deposition zone via a liquid delivery apparatus including a vaporizer. A liquid precursor material is supplied to the liquid delivery apparatus for vaporization thereof to yield the vapor-phase metal precursor composition. The vapor-phase metal precursor composition is flowed to the chemical vapor deposition zone for deposition of metal on the substrate to form the metal-containing film. The liquid precursor material includes a metalorganic polyamine complex, the use of which permits the achievement of sustained operation of the liquid delivery chemical vapor deposition process between maintenance events, due to the low decomposition levels achieved in the vaporization of the polyamine-complexed precursor.

Abstract: A method of forming a metal-containing film on a substrate, such as a semiconductor wafer. The method involves depositing a Group VIII metal carboxylate complex on the substrate, wherein the Group VIII metal is selected from the group consisting of Ru, Os, Rh, Ir, Pd, and Pt, and thermally decomposing the Group VIII metal carboxylate complex to form the metal-containing film.

Abstract: Improved precursors for use in chemical vapor deposition of thin films of low-valent metals are provided, which are sterically saturated and protected from attack of the coreactant in the gas phase. Specific precursors have the formulae:(L).sub.x M.sup.n+ (N(R.sup.1)(C(R.sup.2 R.sup.3)).sub.y N(R.sup.4 R.sup.5)).sub.z (I)(L).sub.x M.sup.n+ (N(R.sup.1)(C(R.sup.2 R.sup.3)).sub.y O(R.sup.4)).sub.z(II)(L).sub.x M.sup.n+ (N(R.sup.1)(C(R.sup.2 R.sup.3)).sub.y S(R.sup.4)).sub.z(III)wherein L is an auxiliary ligand; x is 0-6; M is a metal of valence 1 to 5; n is the oxidation state of the metal; R.sup.1, R.sup.2, R.sup.3, R.sup.4 and R.sup.5 are hydrogen or (C.sub.1 -C.sub.12) alkyl groups; y is 1-5, z is 1-n.

Abstract: A method of forming a film on a substrate using Group III metal complexes, including Group IIIA metals and Group IIIB metals, which include the lanthanides. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems.

Abstract: A method is provided for forming films comprising TiN or Ti--Si--N employing the techniques of chemical vapor deposition to decompose a vapor comprising a compound of the formula Ti?N(R.sup.1)(R.sup.2)!.sub.x ?(R.sup.3)N--C(R.sup.4)(R.sup.5)--C(R.sup.6)(R.sup.7)--N(R.sup.8)(R.sup.9) !.sub.y wherein each of R.sup.1, R.sup.2, R.sup.3, R.sup.8 and R.sup.9 are (C.sub.1 -C.sub.4) alkyl, each of R.sup.4, R.sup.5, R.sup.6, and R.sup.7 are each H or (C.sub.1 -C.sub.4) alkyl and x and y are 1-3; so as to deposit a film comprising titanium on the surface of a substrate.

Abstract: A method of forming a conformal aluminum film on a refractory metal nitride layer is provided and includes positioning a substrate having the refractory metal nitride layer thereon within a chemical vapor deposition chamber; establishing a nominal temperature for the substrate; introducing a carrier gas containing a gaseous, metalorganic precursor into the chamber for a time sufficient to form a metallic seed layer; and introducing a carrier gas containing a gaseous aluminum metalorganic precursor into the chamber for a time sufficient to form a conformal aluminum metal film over the metal refractory nitride layer.

Abstract: A metal source reagent liquid solution, comprising: (i) at least one metal coordination complex including a metal to which is coordinatively bound at least one ligand in a stable complex, wherein the ligand is selected from the group consisting of: .beta.-diketonates, .beta.-ketoiminates, .beta.-diiminates, C.sub.1 -C.sub.8 alkyl, C.sub.2 -C.sub.10 alkenyl, C.sub.2 -C.sub.15 cycloalkenyl, C.sub.6 -C.sub.10 aryl, C.sub.1 -C.sub.8 alkoxy, and fluorinated derivatives thereof; and (ii) a solvent for the metal coordination complex. The solutions are usefully employed for chemical vapor deposition of metals from the metal coordination complexes, such as Mg, Ca, Sr, Ba, Sc, Y, La, Ce, Ti, Zr, Hf, Pr, V, Nb, Ta, Nd, Cr, W, Pm, Mn, Re, Sm, Fe, Ru, Eu, Co, Rh, Ir, Gd, Ni, Tb, Cu, Dy, Ho, Al, Tl, Er, Sn, Pb, Tm, Bi, and/or Yb. The solvent may comprise glyme solvents, alkanols, organic ethers, aliphatic hydrocarbons, and/or aromatic hydrocarbons.

Abstract: A method of forming a metal-containing film on a substrate, such as a semiconductor wafer. The method involves depositing a Group VIII metal carboxylate complex on the substrate, wherein the Group VIII metal is selected from the group consisting of Ru, Os, Rh, Ir, Pd, and Pt, and thermally decomposing the Group VIII metal carboxylate complex to form the metal-containing film.