Abstract: An active temperature control system for a DUT utilizes a heat sink containing HFE7100 liquid and an electric heater. The liquid is cooled below the set point and the heater is used to bring the DUT up to the set point. Set points in the range of ?10 degrees C. to +110 degrees C. can be achieved. The heat sink utilizes only a single coolant for all of the set points, allowing set points to be changed within a few minutes. At a given set point, the heater provides a quick response to offset the effect of self-heating and keep the set point deviation to within a few degrees C. Power following techniques can be utilized to achieve the quick response.

Abstract: An active temperature control system for a DUT utilizes a heat sink containing HFE7100 liquid and an electric heater. The liquid is cooled below the set point and the heater is used to bring the DUT up to the set point. Set points in the range of −10 degrees C. to +110 degrees C. can be achieved. The heat sink utilizes only a single coolant for all of the set points, allowing set points to be changed within a few minutes. At a given set point, the heater provides a quick response to offset the effect of self-heating and keep the set point deviation to within a few degrees C. Power following techniques can be utilized to achieve the quick response.

Abstract: A method of controlling a temperature of a semiconductor device during testing is used with a system including a heater and a heat sink and a temperature control system. The semiconductor device is thermally coupled to the heater, which is thermally coupled to a heat sink. The heat sink defines a chamber, and the chamber is adapted to have a liquid flowing through the chamber. The temperature control system is coupled to the heater and the heat sink. In the method, the temperature of the semiconductor device is moved to approximately a first set point temperature. The temperature of the semiconductor device is moved to approximately a second set point temperature, from approximately the first set point temperature, by changing a temperature of the heater and maintaining the liquid flowing into the chamber at a substantially constant temperature.

Abstract: An active temperature control system for a DUT utilizes a heat sink containing HFE7100 liquid and an electric heater. The liquid is cooled below the set point and the heater is used to bring the DUT up to the set point. Set points in the range of −10 degrees C. to +110 degrees C. can be achieved. The heat sink utilizes only a single coolant for all of the set points, allowing set points to be changed within a few minutes. At a given set point, the heater provides a quick response to offset the effect of self-heating and keep the set point deviation to within a few degrees C. Power following techniques can be utilized to achieve the quick response.

Abstract: A method of controlling a temperature of a semiconductor device during testing is used with a system including a heater and a heat sink and a temperature control system. The semiconductor device is thermally coupled to the heater, which is thermally coupled to a heat sink. The heat sink defines a chamber, and the chamber is adapted to have a liquid flowing through the chamber. The temperature control system is coupled to the heater and the heat sink. In the method, the temperature of the semiconductor device is moved to approximately a first set point temperature. The temperature of the semiconductor device is moved to approximately a second set point temperature, from approximately the first set point temperature, by changing a temperature of the heater and maintaining the liquid flowing into the chamber at a substantially constant temperature.