Abstract: The present disclosure relates to medicament injection devices. An injection device includes: a movable dosage programming component comprising a rotary encoder system having a predefined angular periodicity, a sensor arrangement including a first optical sensor configured to detect movement of the movable dosage programming component relative to the sensor arrangement during dosing of a medicament, wherein the first optical sensor is configured to operate in a strobe-sampling mode at a first frequency, a second optical sensor configured to detect movement of the rotary encoder system relative to the second optical sensor wherein the second optical sensor is configured to operate in a strobe-sampling mode at a second frequency lower than the first frequency, and a processor arrangement configured to, based on the detected movement, determine a medicament dosage administered by the injection device.

Abstract: A method of forming a feature on a multi-layer semiconductor is disclosed. A pattern feature is formed in an uppermost layer of the multi-layer semiconductor. The multilayer semiconductor is etched with a SO2 based chemistry to extend the pattern feature to a lower layer of the multi-layer semiconductor. Use of the SO2 based chemistry for etch eliminates features roughness associated with conventional CO, SiCL4 or CO2-based chemistries.

Abstract: The present invention pertains to formation of a transistor in a manner that mitigates overlap capacitances, thereby facilitating, among other things, enhanced switching speeds. More particularly, a gate stack of the transistor is formed to include an optional layer of poly-SiGe and a layer of poly-Si, where at least one or the layers comprises carbon. The stack may also include a polysilicon seed layer that can also comprise carbon. The carbon changes the components of sidewall passivation materials and affects etch rates during an etching process, thereby facilitating isotropic etching. The changed passivation materials coupled with an enhanced sensitivity of the poly-SiGe and carbon-doped poly-SiGe layer to an etchant utilized in the etching process causes the stack to have a notched appearance.