Abstract: A terminal assembly includes an insulative body having a terminal cavity formed within; a first terminal disposed within the terminal cavity; and a second terminal having an interface configured to connect with the first terminal within the terminal cavity. The insulative body defines an opening extending from an outer surface of the insulative body to the terminal cavity. The opening is sized, shaped, and arranged to provide visual access to verify a connection between the first and second terminals. Several methods of assembling such a terminal assembly are also disclosed.

Abstract: Data values representing the (I2+Q2) values are converted to floating-point representations and a histogram of the floating-point numbers is generated. The count for each histogram bin in the histogram is stored in a memory. Each floating-point number acts as an address for a corresponding histogram bin in the memory. The accumulated counts in the histogram bins are then grouped into a desired number of CCDF bins, and the CCDF curve is derived from the histogram data. Grouping the histogram bins into the CCDF bins may include combining one or more histogram bins into a single CCDF bin. Linear interpolation is used to divide a count value in a histogram bin between two CCDF bins when the histogram bin does not align with a single CCDF bin.

Abstract: Data values representing the (I2+Q2) values are converted to floating-point representations and a histogram of the floating-point numbers is generated. The count for each histogram bin in the histogram is stored in a memory. Each floating-point number acts as an address for a corresponding histogram bin in the memory. The accumulated counts in the histogram bins are then grouped into a desired number of CCDF bins, and the CCDF curve is derived from the histogram data. Grouping the histogram bins into the CCDF bins may include combining one or more histogram bins into a single CCDF bin. Linear interpolation is used to divide a count value in a histogram bin between two CCDF bins when the histogram bin does not align with a single CCDF bin.

Abstract: Methods for forming die that have minimal edge and surface damage are provided. Die formed by these methods are less susceptible to cracking and breakage. Thus, yield and performance of devices fabricated with die formed by these methods are advantageously improved. To form the die, trenches are formed in a wafer around the peripheral edge of the die by processes that cause only minimal damage to the edges of the die. The wafer is cut through the trenches into sections containing the die without contacting the edge of the die. The sections are then mounted onto a holder and thinned to produce the die.

Abstract: A system and method for isothermally growing HgCdTe having improved material uniformity and run-to-run repeatability employs a growth solution vessel in which a substrate may be inserted. The growth solution is heated and maintained at a constant temperature while causing Hg to vaporize and rise within the growth solution vessel. A water-cooling jacket causes the Hg to condense and form on the walls of the growth solution vessel. The Hg condensate is directed into a calibrated reservoir. HgCdTe growth continues as the Hg is depleted from the growth solution and fills the reservoir. The reservoir is calibrated to hold the specific amount of Hg condensate corresponding to the desired layer of HgCdTe. The reservoir overflows when full and directs the overflow into the growth solution, causing HgCdTe formation to cease. The volume of the reservoir may be altered to capture more or less Hg condensate, as desired, in order to change the amount of HgCdTe formed on the CdTe substrate.