Patents by Inventor Brian Bernstein

Brian Bernstein has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250099169
    Abstract: Methods, systems, and devices are described for mapping and treating tissue during a medical procedure. In some cases, a device includes a mesh of wires with sensors coupled thereto. The device can be coupled to an expandable treatment element. The expandable treatment element can include multiple segments. The sensors can be used to map a tissue area and monitor the tissue during a medical procedure.
    Type: Application
    Filed: May 1, 2024
    Publication date: March 27, 2025
    Inventors: Brian Schuler, David Bernstein, David G. Matsuura, Phillip J. Simpson
  • Patent number: 8586459
    Abstract: An ion implantation device and a method of manufacturing a semiconductor device is described, wherein ionized phosphorus-containing molecular clusters are implanted to form N-type transistor structures. The clusters are implanted to provide N-type doping for Source and Drain structures and Pocket or Halo formation, and for counter-doping Poly gates. These doping steps are critical to the formation of NMOS transistors. The molecular cluster ions have the chemical form AnHx+, or AnRHx+, where n and x are integers with 4<n and x?0, and A is either As or P, and R is a molecule not containing phosphorus or arsenic, which is not injurious to the implantation process.
    Type: Grant
    Filed: November 5, 2007
    Date of Patent: November 19, 2013
    Assignee: SemEquip, Inc.
    Inventors: Thomas N. Horsky, Erin Dyker, Brian Bernstein, Dennis Manning
  • Publication number: 20080122005
    Abstract: An ion implantation device and a method of manufacturing a semiconductor device is described, wherein ionized phosphorus-containing molecular clusters are implanted to form N-type transistor structures. For example, in the fabrication of Complementary Metal-Oxide Semiconductor (CMOS) devices, the clusters are implanted to provide N-type doping for Source and Drain structures and Pocket or Halo formation, and for counter-doping Poly gates. These doping steps are critical to the formation of NMOS transistors. The molecular cluster ions have the chemical form AnHx+, or AnRHx+, where n and x are integers with 4?n, and x?0, and A is either As or P, and R is a molecule not containing phosphorus or arsenic, which is not injurious to the implantation process.
    Type: Application
    Filed: November 5, 2007
    Publication date: May 29, 2008
    Inventors: Thomas N. Horsky, Erin Dyker, Brian Bernstein, Dennis Manning