Abstract: The present disclosure describes techniques for fabricating a multi-level structure. For example, in accordance with some implementations, the disclosure describes techniques for fabricating a multi-level master from which optical elements can be replicated either directly or by way of a sub-master. The disclosure also describes multi-level optical elements and processes for making them.

Abstract: Methods of manufacturing an optical device can include, in some implementations, providing a substrate having a first polymeric layer on a surface of the substrate and a second polymeric layer on the first polymeric layer, forming first openings in the second polymeric layer to define an etch mask composed of material of the second polymeric layer, and etching to form second openings in the first polymeric layer, wherein locations of the second openings are defined by the etch mask. A material is deposited in the second openings to form meta-atoms of a first metastructure, wherein adjacent ones of the meta-atoms are separated from one another by polymeric material of the first polymeric layer. Optical devices including metastructures can be formed, where meta-atoms of the metastructure have a relatively high aspect ratio.

Abstract: The present disclosure describes metastructure optical elements (MOEs), methods for manufacturing the MOEs, and devices incorporating the MOEs. The MOEs include meta-atoms that have outwardly sloping sidewalls. A meta-atom can have sidewalls that are substantially vertical along an upper section of the meta-atoms, and that slope outwardly along a lower section of the meta-atom.

Abstract: In an example implementation, an apparatus includes an electrically insulating substrate, optical elements in or on the substrate, and electrically conductive material on a surface of the substrate and laterally surrounding at least some of the optical elements. The electrically conductive material facilitates clamping of the electrically insulating substrate to an electrostatic chuck.

Abstract: The present disclosure describes anti-reflective structuring of optical elements that include a metasurface. In some implementations, the anti-reflective structuring includes applying one or more anti-reflective coatings over a surface of the metasurface. In some implementations, the anti-reflective structuring includes modifying the shape of the meta-atoms or providing textured features on the meta-atoms so as to reduce reflections.

Abstract: Metastructures composed of a plurality of sublayers each of which has a respective index of refraction that differs from the index of refraction of at least one of the other sublayers are described, as are methods for manufacturing the metastructures. Intermediate wafers that can be produced during the methods also are described.

Abstract: Methods of manufacturing an optical device can include, in some implementations, providing a substrate having a first polymeric layer on a surface of the substrate and a second polymeric layer on the first polymeric layer, forming first openings in the second polymeric layer to define an etch mask composed of material of the second polymeric layer, and etching to form second openings in the first polymeric layer, wherein locations of the second openings are defined by the etch mask. A material is deposited in the second openings to form meta-atoms of a first metastructure, wherein adjacent ones of the meta-atoms are separated from one another by polymeric material of the first polymeric layer. Optical devices including metastructures can be formed, where meta-atoms of the metastructure have a relatively high aspect ratio.

Abstract: The manufacture of surface emitting lasers that include an optical metastructure are described. For example, in accordance with some implementations, a method includes providing a sequence of semiconductor layers and processing the sequence of semiconductor layers to form an upper reflector disposed over an active layer, the active layer being disposed over a lower reflector, and the lower reflector layer being disposed over a substrate. The semiconductor layers in which the upper reflector is formed include one or more outer semiconductor layers, and the method includes forming a metastructure in the one or more outer semiconductor layers.

Abstract: Metastructures having meta-atoms composed of a high refractive index material are described, as are methods for manufacturing the metastructures. Intermediate wafers that can be produced during the methods also are described.

Abstract: The present disclosure describes techniques for fabricating a multi-level structure. For example, in accordance with some implementations, the disclosure describes techniques for fabricating a multi-level master from which optical elements can be replicated either directly or by way of a sub-master. The disclosure also describes multi-level optical elements and processes for making them.

Abstract: The present disclosure describes techniques that, in some instances, can help reduce stress and potential damage during the manufacture of optical elements such as those that include a metastructure formed by imprinting. In one aspect, a method of manufacturing an optical element includes imprinting a stamp into a polymeric material on a substrate, wherein the stamp includes first projections corresponding to an active area of the stamp for formation of meta-atoms in the polymeric material. The stamp further includes a protective structure laterally surrounding the first projections. The protective structure includes at least one additional projection extending in parallel to the first projections. The method includes removing the stamp from the polymeric material, thereby forming openings in the polymeric material in positions corresponding to the first projections and in one or more positions corresponding to the at least one additional projection.

Abstract: Methods of manufacturing an optical device can include, in some implementations, providing a substrate having a first polymeric layer on a surface of the substrate and a second polymeric layer on the first polymeric layer, forming first openings in the second polymeric layer to define an etch mask composed of material of the second polymeric layer, and etching to form second openings in the first polymeric layer, wherein locations of the second openings are defined by the etch mask. A material is deposited in the second openings to form meta-atoms of a first metastructure, wherein adjacent ones of the meta-atoms are separated from one another by polymeric material of the first polymeric layer. Optical devices including metastructures can be formed, where meta-atoms of the metastructure have a relatively high aspect ratio.

Abstract: Manufacturing an optical device includes providing a substrate (102) having a polymeric layer (104) on a surface of the substrate, forming openings in the polymeric layer, and depositing a material in the openings to form meta-atoms (114, 214) of a first metastructure. Adjacent ones of the meta-atoms are separated from one another by polymeric material of the polymeric layer. Optical devices that include one or more metastructures in which meta-atoms are separated from one another by polymeric material are described, as are modules that incorporate the optical devices.

Abstract: The present invention relates to a method for performing high speed electron beam lithography (EBL). An electron beam source (EBS), capable of emitting an electron beam towards the energy sensitive resist, forms a first pattern (P1) on the substrate, the first pattern defining a first direction (D1) on the substrate. The electron beam source then forms a second pattern (P2) on the substrate. The energy and/or dose delivered to the energy sensitive resist during the exposure of the first and the second pattern is dimensioned so that the threshold dose/energy of the energy sensitive resist is reached on the overlapping portions of the first and the second patterns (P1, P2). The invention provides a high speed technique for the production of substrates with high quality developed patterns, e.g. hole or dot arrays, by electron beam lithography. Each hole or dot may be defined by the mutually overlapping portions of the first and second pattern, e.g.

Abstract: The present invention relates to a method for performing high speed electron beam lithography (EBL). An electron beam source (EBS), capable of emitting an electron beam towards the energy sensitive resist, forms a first pattern (P1) on the substrate, the first pattern defining a first direction (D1) on the substrate. The electron beam source then forms a second pattern (P2) on the substrate. The energy and/or dose delivered to the energy sensitive resist during the exposure of the first and the second pattern is dimensioned so that the threshold dose/energy of the energy sensitive resist is reached on the overlapping portions of the first and the second patterns (P1, P2). The invention provides a high speed technique for the production of substrates with high quality developed patterns, e.g. hole or dot arrays, by electron beam lithography. Each hole or dot may be defined by the mutually overlapping portions of the first and second pattern, e.g.