Abstract: A warewash machine arm includes a body formed of a single piece of sheet metal. Adjacent edge parts of the formed sheet metal mat be sealed, such as by a seam weld, an epoxy or another sealing technique.

Abstract: A hydrocarbon reformer system including a first reactor configured to generate hydrogen-rich reformate by carrying out at least one of a non-catalytic thermal partial oxidation, a catalytic partial oxidation, a steam reforming, and any combinations thereof, a second reactor in fluid communication with the first reactor to receive the hydrogen-rich reformate, and having a catalyst for promoting a water gas shift reaction in the hydrogen-rich reformate, and a heat exchanger having a first mass of two-phase water therein and configured to exchange heat between the two-phase water and the hydrogen-rich reformate in the second reactor, the heat exchanger being in fluid communication with the first reactor so as to supply steam to the first reactor as a reactant is disclosed. The disclosed reformer includes an auxiliary reactor configured to generate heated water/steam and being in fluid communication with the heat exchanger of the second reactor to supply the heated water/steam to the heat exchanger.

Abstract: A gate quality oxide-compound semiconductor structure (10) is formed by the steps of providing a III-V compound semiconductor wafer structure (13) with an atomically ordered and chemically clean semiconductor surface in an ultra high vacuum (UHV) system (20), directing a molecular beam (26) of gallium oxide onto the surface of the wafer structure to initiate the oxide deposition, and providing a second beam (28) of atomic oxygen to form a Ga.sub.2 O.sub.3 layer (14) with low defect density on the surface of the wafer structure. The second beam of atomic oxygen is supplied upon completion of the first 1-2 monolayers of Ga.sub.2 O.sub.3. The molecular beam of gallium oxide is provided by thermal evaporation from a crystalline Ga.sub.2 O.sub.3 or gallate source, and the atomic beam of oxygen is provided by either RF or microwave plasma discharge, thermal dissociation, or a neutral electron stimulated desorption atom source.

Abstract: A method of passivating interface states of oxide-compound semiconductor interfaces using molecular, atomic, or isotopic species wherein said species are applied before oxide deposition in ultra-high vacuum, or during interruption of oxide deposition in ultra-high vacuum (preferentially after oxide surface coverage of a submonolayer, a monolayer, or a few monolayers), or during oxide deposition in ultra-high vacuum, or after completion of oxide deposition, or before or after any processing steps of the as deposited interface structure. In a preferred embodiment, hydrogen or deuterium atoms are applied to a Ga.sub.2 O.sub.3 --GaAs interface at some point before, during, or after oxide deposition in ultra-high vacuum, or before or after any processing steps of the as deposited interface structure, at any given and useful substrate temperature wherein the atomic species can be provided by any one of RF discharge, microwave plasma discharge, or thermal dissociation.

Abstract: A method of fabricating submicron HFETs includes forming a buffered substrate structure with a supporting substrate of GaAs, a portion of low temperature AlGaAs grown on the supporting substrate at a temperature of approximately 300.degree. C., a layer of low temperature GaAs grown on the portion AlGaAs layer at a temperature of 200.degree. C., a layer of low temperature AlGaAs grown on the GaAs layer at a temperature of 400.degree. C., and a buffer layer of undoped GaAs grown on the second AlGaAs layer. Complementary pairs of HFETs can be formed on the buffered substrate structure, since the structure supports the operation of p and n type transistors equally well.

Abstract: A method of fabricating a gate quality oxide-compound semiconductor structure includes forming an insulating Ga.sub.2 O.sub.3 layer on the surface of a compound semiconductor wafer structure by a supersonic gas jet containing gallium oxide molecules and oxygen. In a preferred embodiment, a III-V compound semiconductor wafer structure with an atomically ordered and chemically clean semiconductor surface is transferred from a semiconductor growth chamber into an insulator deposition chamber via an ultra high vacuum preparation chamber. Ga.sub.2 O.sub.3 deposition onto the surface of the wafer structure is initiated by a supersonic gas jet pulse and proceeds via optimization of pulse duration, speed of gas jet, mole fraction of gallium oxide molecules and oxygen atoms, and plasma energy.

Abstract: Heat-sensitive, foamable liquids such as latex, are concentrated in a continuous process without foaming by feeding a heated liquid to a tubular evaporation chamber maintained at a reduced pressure where the liquid is adiabatically vaporized and forms an annularly flowing two-phase stream. The liquid and vapor phases are largely separated in the evaporation chamber by centrifugal forces acting on the stream. The final separation and isolation of the liquid phase is achieved in a separator consisting of a cyclone separator, a reservoir for the concentrated liquid and a settling chamber.