Abstract: A drum-in-hat (DIH) disc brake assembly has a disc service brake, a DIH parking and emergency brake, and a parking brake anchor. A backing plate, an axle flange, and a caliper bracket each have at least two mounting apertures formed therethrough. The parking brake anchor includes a bracket portion having a pair of studs extending axially outwardly therefrom. The studs are structured and configured to extend through the respective mounting apertures of the backing plate, the axle flange, and the caliper bracket for securing the caliper bracket, parking brake anchor, and the backing plate to the axle flange.

Abstract: An improved structure for an electric actuator unit for use in a brake assembly.

Abstract: The invention relates to vectors comprising nucleic acid sequences encoding transcriptional repressor silencing element binding factor referred as “SEBF”, transformed vegetal host and plants comprising said vectors. The invention also relates to methods of altering resistance of a plant to pathogens with SEBF encoding nucleic acids.

Abstract: This invention relates to an improved park brake cable end assembly for a drum-in-hat disc brake assembly having a disc service brake and a drum-in-hat parking and emergency brake. The drum-in-hat disc brake assembly includes a backing plate adapted to support a drum brake shoe assembly of the drum-in-hat parking and emergency brake; a caliper bracket adapted support a disc brake caliper assembly of the disc service brake; and a drum-in-hat adapter adapted support a disc brake caliper assembly of the disc service brake. According to a feature of the present invention, the drum-in-hat parking and emergency brake includes a park brake cable end assembly including a lever pivotally supported on a link having an end having a configuration which is adapted to accommodate either a parking brake cable having a S-shaped cable end or a clevis shaped cable end.

Abstract: The present application describes a plant gene regulatory element and the uses thereof. More particularly a silencing element for modulating plant responses to pathogens, auxin and ethylene is described. The invention also describes transcriptional repressors which specifically binds onto the silencing element of the invention. Nucleotide and amino acid sequences of a novel transcriptional repressor referred as “SEBF” are given.

Abstract: A method for the in situ cleaning of a semiconductor deposition chamber utilized for the deposition of a semiconductor material such as titanium or titanium nitride comprising, between wafers, introducing chlorine gas into the chamber at elevated temperature, purging the chamber with an inert gas and evacuating it before introduction of the next wafer. A two-stage between wafer cleaning process is carried out by introducing chlorine into the chamber at elevated temperature, thereafter initiating a plasma without removing the chlorine, purging the chamber with an inert gas and evacuating it before introduction of the next wafer. In a preferred embodiment, a thin protective film of titanium is deposited on the inner sur aces of the chamber prior to utilizing the chamber for he deposition of such material. The protective layer is replenished following each two-stage cleaning.

Abstract: A method for the in situ cleaning of a semiconductor deposition chamber utilized for the deposition of a semiconductor material such as titanium or titanium nitride comprising, between wafers, introducing chlorine gas into the chamber at elevated temperature, purging the chamber with an inert gas and evacuating it before introduction of the next wafer. A two-stage between wafer cleaning process is carried out by introducing chlorine into the chamber at elevated temperature, thereafter initiating a plasma without removing the chlorine, purging the chamber with an inert gas and evacuating it before introduction of the next wafer. In a preferred embodiment, a thin protective film of titanium is deposited on the inner surfaces of the chamber prior to utilizing the chamber for the deposition of such material. The protective layer is replenished following each two-stage cleaning.

Abstract: A method for the in situ cleaning of a semiconductor deposition chamber utilized for the deposition of a semiconductor material such as titanium or titanium nitride comprising, between wafers, introducing chlorine gas into the chamber at elevated temperature, purging the chamber with an inert gas and evacuating it before introduction of the next wafer. A two-stage between wafer cleaning process is carried out by introducing chlorine into the chamber at elevated temperature, thereafter initiating a plasma without removing the chlorine, purging the chamber with an inert gas and evacuating it before introduction of the next wafer. In a preferred embodiment, a thin protective film of titanium is deposited on the inner surfaces of the chamber prior to utilizing the chamber for the deposition of such material. The protective layer is replenished following each two-stage cleaning.