Abstract: A method of producing a rare earth oxysulfide scintillating ceramic body includes heat treatment to form a consolidated body, followed by gas hot isostatic pressing (GHIPing). A powder is first provided having the general formula (M1-xLnx)2O2S, wherein M is a rare earth element, and Ln is at least one element selected from the group consisting of Eu, Ce, Pr, Tb, Yb, Dy, Sm, and Ho, and 1×10?6<X<2×10?1. The powder is heat treated to form a consolidated body having closed porosity, wherein heat treating is carried out at a temperature Tht. The consolidated body is GHIPed to a density not less than 99% of theoretical density, in a GHIPing environment having a temperature Thip, where 1100° C.<Thip<1500° C., to thereby form a densified body.

Abstract: An electrostatic chuck is provided which includes a ceramic body comprising aluminum nitride (AlN), and at least one electrode in the ceramic body. According to a particular feature of this embodiment, the aluminum nitride has a resistivity ratio ?10V/?500V less than about 5. In this regard, ?10V represents the resistivity of the electrostatic chuck at 10 applied volts while ?500V represents the resistivity of the AlN material at 500 applied volts.

Abstract: An electrostatic chuck is provided which includes a ceramic body comprising aluminum nitride (AlN), and at least one electrode in the ceramic body. According to a particular feature of this embodiment, the aluminum nitride has a resistivity ratio &rgr;10V/&rgr;500V less than about 5. In this regard, &rgr;10V represents the resistivity of the electrostatic chuck at 10 applied volts while &rgr;500V represents the resistivity of the AlN material at 500 applied volts.

Abstract: A ceramic heater for use as a platform or support in producing a semiconductor wafer is described. A method for use of the ceramic heater as well as a method for controlling the temperature of a semiconductor wafer is provided. In a exemplary embodiment, the heater is made from a ceramic compound which has a thermally conductive ceramic layer and a ceramic heater element. In this embodiment, the thermally conductive ceramic layer is aluminum nitride doped with oxygen at such a level that it promotes thermal conductivity. The heater may also have a thermally insulative ceramic layer comprised of a mixture of aluminum nitride with a dopant at a level that makes the aluminum nitride thermally insulating. The heater element may be embedded within the ceramic chuck in a variety of shapes and configurations as necessary and as particular to the semiconductor processing requirements.