Abstract: This invention provides a ferromagnetic material Fe.sub.60 M.sub.x N.sub.y where M is at least one element selected from Al, Ga, In and Tl, N is at least one element selected from P, As, Sb and Bi, x has a range of 1.ltoreq..times..ltoreq.39 and x+y=40 and excluding Fe.sub.60 Ga.sub.X AS.sub.y. A preferred ferromagnetic material is Fe.sub.60 Ga.sub.x As.sub.y , preferably when x has a range of 3.ltoreq..times..ltoreq.37, more preferably when x has a range of 20.ltoreq..times..ltoreq.37, and even more preferably when x has a range of 30.ltoreq..times..ltoreq.37. Typically, ferromagnetic materials of this type can be homogenised by annealing or melt spinning. Melt spun Fe.sub.60 Ga.sub.x As.sub.y can show Curie Temperatures (T.sub.c) of about 470.degree. C. and saturation magnestions of about 89 emu/g. Typically a ferromagentic material of the Fe.sub.60 M.sub.x N.sub.y has a B8.sub.2 type structure.

Abstract: A ferromagnetic material having the formula MGa.sub.2-x As.sub.x where 0.15.ltoreq.x.ltoreq.0.99 and M represents one of Fe.sub.3, Fe.sub.3 partially substituted by manganese or Fe.sub.3 partially substituted by cobalt.

Abstract: There is provided a method of producing inorganic thin films by metal inorganic chemical vapor deposition. The method comprises forming a vapor stream comprising a vapor mixture of an organometallic compound and a heterocyclic organic compound incorporating a group V or group VI element, and thermally decomposing the mixture on a heated substrate to form an inorganic layer. The heterocyclic compound may be an aliphatic or aromatic ring compound. The mixture may include vapors appropriate for deposition of ternary or higher order compounds, and/or for introducing dopants.

Abstract: A method in which a phosphor film of manganese doped zinc chalcogenide is produced by chemical vapor deposition from alkyl zinc vapor and the gaseous hydride of the chalcogen. The manganese dopant is introduced uniformly during deposition by decomposition of tricarbonyl alkylcyclopentadienyl manganese: ##STR1## where here R denotes the alkyl radical. Preferably dimethyl zinc and tricarbonyl methylcyclopentadienyl manganese are used.The phosphor produced may be one of the following manganese doped compounds: zinc sulphide, zinc selenide, zinc sulphur selenide, zinc oxy-sulphide, zinc oxy-selenide or zinc cadmium sulphide.