Abstract: A plasma etching system includes a reaction chamber configured to react plasma with a substrate to perform an etching process, and a chamber port providing visual access to an internal area of the reaction chamber. A chamber port assembly is disposed in the chamber port and is configured to generate an electric field in response to receiving a voltage. The plasma etching system can also repel plasma ions by forming an electrically conductive transparent window-protective film on surface of a data collection window, and disposing the data collection window in a chamber port of a plasma etching system. A voltage can then be applied to the electrically conductive transparent window-protective film to generate an electric field. A plasma etching process can then be performed in the reaction chamber and the plasma ions produced during the etching process are repelled away from the data collection window via the electric field.

Abstract: A semiconductor device structure and related method forming super via (SVIA) structures using a via first, trench last (VFTL) damascene processing technique. The formed SVIA connects a top metallization level structure formed in a stack of interlevel dielectric (ILD) material layers and extends through an intermediate ILD layer and a dielectric etch stop layer therebetween to connect to an underlying metallization level structure of an underlying ILD layer below the intermediate ILD layer. The VFTL processing to form the SVIA avoids a punching through of an etch stop layer provided between the intermediate ILD layer and the bottom ILD material layer after a final trench and OPL strip. The SVIA further includes a metal plug contacting the underlying metallization level structure of the underlying ILD layer and is of a material different than the material of said metallization level structure. The formed SVIA exhibits a straight via profile and chamfer.

Abstract: Disclosed are process control systems and methods incorporating a crystal microbalance (CM) (e.g., a quartz crystal microbalance (QCM)) into gas flow line(s) entering and/or exiting a processing chamber. A CM measures the resonance of a quartz crystal sensor contained therein as gas flows over that crystal sensor and can, thereby be used to accurately monitor, in real time, the mass flow rate of the gas. The mass flow rate may indicate that gas contamination has occurred and, in response, a controller can cause the gas flow to stop. Additionally, the mass flow rate may indicate the desired result will not be achieved within the processing chamber and, in response, advanced process control (APC) can be performed (e.g., the controller can adjust the gas flow). CM(s) incorporated into gas flow lines entering and/or exiting a processing chamber can provide precise measurements for process monitoring at minimal cost.

Abstract: Disclosed are process control systems and methods incorporating a crystal microbalance (CM) (e.g., a quartz crystal microbalance (QCM)) into gas flow line(s) entering and/or exiting a processing chamber. A CM measures the resonance of a quartz crystal sensor contained therein as gas flows over that crystal sensor and can, thereby be used to accurately monitor, in real time, the mass flow rate of the gas. The mass flow rate may indicate that gas contamination has occurred and, in response, a controller can cause the gas flow to stop. Additionally, the mass flow rate may indicate the desired result will not be achieved within the processing chamber and, in response, advanced process control (APC) can be performed (e.g., the controller can adjust the gas flow). CM(s) incorporated into gas flow lines entering and/or exiting a processing chamber can provide precise measurements for process monitoring at minimal cost.