Abstract: A method of manufacturing a semiconductor device having an active region and a termination region includes providing a semiconductor substrate having first and second main surfaces opposite to each other. The semiconductor substrate has an active region and a termination region surrounding the active region. The first main surface is oxidized. A first plurality of trenches and a first plurality of mesas are formed in the termination region. The first plurality of trenches in the termination region are filled with a dielectric material. A second plurality of trenches in the termination region. The second plurality of trenches are with the dielectric material.

Abstract: A method of manufacturing a semiconductor device having an active region and a termination region includes providing a semiconductor substrate having first and second main surfaces opposite to each other. The semiconductor substrate has an active region and a termination region surrounding the active region. The first main surface is oxidized. A first plurality of trenches and a first plurality of mesas are formed in the termination region. The first plurality of trenches in the termination region are filled with a dielectric material. A second plurality of trenches in the termination region. The second plurality of trenches are with the dielectric material.

Abstract: A method of manufacturing a semiconductor device having an active region and a termination region includes providing a semiconductor substrate having first and second main surfaces opposite to each other. The semiconductor substrate has an active region and a termination region surrounding the active region. The first main surface is oxidized. A first plurality of trenches and a first plurality of mesas are formed in the termination region. The first plurality of trenches in the termination region are filled with a dielectric material. A second plurality of trenches in the termination region. The second plurality of trenches are with the dielectric material.

Abstract: A method of manufacturing a semiconductor device having an active region and a termination region includes providing a semiconductor substrate having first and second main surfaces opposite to each other. The semiconductor substrate has an active region and a termination region surrounding the active region. The first main surface is oxidized. A first plurality of trenches and a first plurality of mesas are formed in the termination region. The first plurality of trenches in the termination region are filled with a dielectric material. A second plurality of trenches in the termination region. The second plurality of trenches are with the dielectric material.

Abstract: A method of manufacturing a semiconductor device having an active region and a termination region includes providing a semiconductor substrate having first and second main surfaces opposite to each other. The semiconductor substrate has an active region and a termination region surrounding the active region. The first main surface is oxidized. A first plurality of trenches and a first plurality of mesas are formed in the termination region. The first plurality of trenches in the termination region are filled with a dielectric material. A second plurality of trenches in the termination region. The second plurality of trenches are with the dielectric material.

Abstract: A method of manufacturing a semiconductor device having an active region and a termination region includes providing a semiconductor substrate having first and second main surfaces opposite to each other. The semiconductor substrate has an active region and a termination region surrounding the active region. The first main surface is oxidized. A first plurality of trenches and a first plurality of mesas are formed in the termination region. The first plurality of trenches in the termination region are filled with a dielectric material. A second plurality of trenches in the termination region. The second plurality of trenches are with the dielectric material.

Abstract: A method of manufacturing a semiconductor device includes providing semiconductor substrate having trenches and mesas. At least one mesa has first and second sidewalls. The method includes angularly implanting a dopant of a second conductivity into the first sidewall, and angularly implanting a dopant of a second conductivity into the second sidewall. The at least one mesa is converted to a pillar by diffusing the dopants into the at least one mesa. The pillar is then converted to a column by angularly implanting a dopant of the first conductivity into a first sidewall of the pillar, and by angularly implanting the dopant of the first conductivity type into a second sidewall of the pillar. The dopants are then diffused into the pillar to provide a P-N junction of the first and second doped regions located along the depth direction of the adjoining trench. Finally, the trenches are filled with an insulating material.

Abstract: A method of manufacturing a semiconductor device having an active region and a termination region includes providing a semiconductor substrate having first and second main surfaces opposite to each other. The semiconductor substrate has an active region and a termination region surrounding the active region. The first main surface is oxidized. A first plurality of trenches and a first plurality of mesas are formed in the termination region. The first plurality of trenches in the termination region are filled with a dielectric material. A second plurality of trenches are formed in the termination region. The trenches of the second plurality of trenches are filled with the dielectric material.

Abstract: A method of manufacturing a semiconductor device includes providing semiconductor substrate having trenches and mesas. At least one mesa has first and second sidewalls. The method includes angularly implanting a dopant of a second conductivity into the first sidewall, and angularly implanting a dopant of a second conductivity into the second sidewall. The at least one mesa is converted to a pillar by diffusing the dopants into the at least one mesa. The pillar is then converted to a column by angularly implanting a dopant of the first conductivity into a first sidewall of the pillar, and by angularly implanting the dopant of the first conductivity type into a second sidewall of the pillar. The dopants are then diffused into the pillar to provide a P-N junction of the first and second doped regions located along the depth direction of the adjoining trench. Finally, the trenches are filled with an insulating material.

Abstract: A method of forming a trench within a semiconductor substrate. The method comprises, for example, the following: (a) providing a semiconductor substrate; (b) providing a patterned first CVD-deposited masking material layer having a first aperture over the semiconductor substrate; (c) depositing a second CVD-deposited masking material layer over the first masking material layer; (d) etching the second masking material layer until a second aperture that is narrower than the first aperture is created in the second masking material within the first aperture; and (e) etching the semiconductor substrate through the second aperture such that a trench is formed in the semiconductor substrate. In preferred embodiments, the method of the present invention is used in the formation of trench MOSFET devices.

Abstract: A method is provided for forming shallow and deep dopant implants adjacent source regions of a first conductivity type within an upper portion of an epitaxial layer in a trench MOSFET device.

Abstract: A method of forming a trench within a semiconductor substrate. The method comprises, for example, the following: (a) providing a semiconductor substrate; (b) providing a patterned first CVD-deposited masking material layer having a first aperture over the semiconductor substrate; (c) depositing a second CVD-deposited masking material layer over the first masking material layer; (d) etching the second masking material layer until a second aperture that is narrower than the first aperture is created in the second masking material within the first aperture; and (e) etching the semiconductor substrate through the second aperture such that a trench is formed in the semiconductor substrate. In preferred embodiments, the method of the present invention is used in the formation of trench MOSFET devices.

Abstract: A method is provided for forming shallow and deep dopant implants adjacent source regions of a first conductivity type within an upper portion of an epitaxial layer in a trench MOSFET device.