Abstract: A controllable grounded response generation framework includes a machine learning model, a grounding interface, and a control interface. The machine learning model is trained to output computer-generated text based on input text. The grounding interface is useable by the machine learning model to access a grounding source including information related to the input text. The control interface is useable by the machine learning model to recognize a control signal. The machine learning model is configured to include information from the grounding source in the computer-generated text and focus the computer-generated text based on the control signal.

Abstract: An articulation joint for a medical device has a proximal end and a distal end. The articulation joint includes a plurality of links, one or more actuating wire, and at least one stiffening element. Each link of the plurality of links is configured to articulate relative to adjacent links of the plurality of links. Each actuating wire extends through an actuation channel of the plurality of links. Each actuating wire is fixedly attached proximate the distal end of the articulation joint and translatable relative to the plurality of links to articulate the articulation joint. The at least one stiffening element extends through a stiffening channel of the plurality of links. The at least one stiffening element has a proximal end fixedly attached to one link of the plurality of links and has a distal end fixedly attached to another link of the plurality of links.

Abstract: An elongate endovascular element for crossing through an obstruction in a blood vessel comprises: a proximal section; a distal tip section of smaller diameter than the proximal section; and a distally-tapering intermediate section extending between the proximal and distal tip sections; wherein the tapered intermediate section has a length that is substantially ?/2 or a multiple of ?/2, where ? is a wavelength of a driving frequency that will produce longitudinal resonance in the element.

Abstract: Gaming machines cabinets are disclosed that are designed and constructed to resist viruses, bacteria and fungi and that are generally configured to curb the spread of infectious diseases.

Abstract: Methods of removing metal from a portion of a substrate include exposing the substrate to a reducing environment comprising at least one reducing agent and at least one oxidizing agent, determining whether metal remaining on the portion of the substrate is less than or equal to a particular level, and exposing the substrate to an oxidizing environment comprising at least one oxidizing agent and at least one reducing agent if the metal remaining on the portion of the substrate is deemed to be greater than the particular level.

Abstract: Methods of removing metal from a portion of a substrate include exposing the substrate to a reducing environment comprising at least one reducing agent and at least one oxidizing agent, determining whether metal remaining on the portion of the substrate is less than or equal to a particular level, and exposing the substrate to an oxidizing environment comprising at least one oxidizing agent and at least one reducing agent if the metal remaining on the portion of the substrate is deemed to be greater than the particular level.

Abstract: Methods of removing metal from a portion of a substrate are useful in integrated circuit fabrication. Methods include exposing the substrate to an oxidizing environment comprising at least one oxidizing agent and at least one reducing agent, determining whether metal remaining on the portion of the substrate is less than or equal to a particular level, and if the metal remaining on the portion of the substrate is deemed to be greater than the particular level, exposing the substrate to a reducing environment comprising at least one reducing agent and at least one oxidizing agent.

Abstract: In embodiments of the present invention improved capabilities are described for developing, training, validating and deploying discovery avatars embodying mathematical models that may be used for document and data discovery and deployed within large data repositories. For example, an avatar may be constructed by machine learning processes, including by processing information related to what types of information analysts find useful in large data sets. Once constructed, an avatar may be deployed as an aid to human intuition in a wide range of analytical processes, such as related to national security, enterprise management (e.g., programs related to sales, marketing, product, promotions, placement, pricing and the like), dispute resolution (including litigation), forensic analysis, criminal, administrative, civil and private investigations, scientific investigations, research and development, and a wide range of others.

Abstract: In embodiments of the present invention improved capabilities are described for developing, training, validating and deploying discovery avatars embodying mathematical models that may be used for document and data discovery and deployed within large data repositories. For example, an avatar may be constructed by machine learning processes, including by processing information related to what types of information analysts find useful in large data sets. Once constructed, an avatar may be deployed as an aid to human intuition in a wide range of analytical processes, such as related to national security, enterprise management (e.g., programs related to sales, marketing, product, promotions, placement, pricing and the like), dispute resolution (including litigation), forensic analysis, criminal, administrative, civil and private investigations, scientific investigations, research and development, and a wide range of others.

Abstract: Methods of removing metal from a portion of a substrate are useful in integrated circuit fabrication. Methods include exposing the substrate to an oxidizing environment comprising at least one oxidizing agent and at least one reducing agent, determining whether metal remaining on the portion of the substrate is less than or equal to a particular level, and if the metal remaining on the portion of the substrate is deemed to be greater than the particular level, exposing the substrate to a reducing environment comprising at least one reducing agent and at least one oxidizing agent.

Abstract: Methods of removing metal from a portion of a substrate are useful in integrated circuit fabrication. Methods include exposing the substrate to an oxidizing environment comprising at least one oxidizing agent and at least one reducing agent, and exposing the substrate to a reducing environment comprising at least one reducing agent and at least one oxidizing agent.

Abstract: In embodiments of the present invention improved capabilities are described for developing, training, validating and deploying discovery avatars embodying mathematical models that may be used for document and data discovery and deployed within large data repositories.

Abstract: Some embodiments include methods of removing noble metal-containing particles from over a substrate. The substrate is exposed to a composition that reduces adhesion between the noble metal-containing particles and the substrate, and simultaneously the substrate is spun to sweep at least some of the noble metal-containing particles off from the substrate. Some embodiments include methods in which tunnel dielectric material is formed across a semiconductor wafer. Metallic nanoparticles are formed across the tunnel dielectric material. A stack of two or more different materials is formed over the metallic nanoparticles. A portion of the stack is covered with a protective mask while another portion of the stack is left unprotected. The unprotected portion of the stack is removed to expose some of the metallic nanoparticles. The semiconductor wafer to is subjected to etchant suitable to undercut at least some of the exposed metallic nanoparticles, and simultaneously the semiconductor wafer is spun.

Abstract: In embodiments of the present invention improved capabilities are described for developing, training, validating and deploying discovery avatars embodying mathematical models that may be used for document and data discovery and deployed within large data repositories.

Abstract: Methods of removing metal from a portion of a substrate are useful in integrated circuit fabrication. Methods include exposing the substrate to an oxidizing environment comprising at least one oxidizing agent and at least one reducing agent, and exposing the substrate to a reducing environment comprising at least one reducing agent and at least one oxidizing agent.

Abstract: Some embodiments include methods of removing noble metal-containing particles from over a substrate. The substrate is exposed to a composition that reduces adhesion between the noble metal-containing particles and the substrate, and simultaneously the substrate is spun to sweep at least some of the noble metal-containing particles off from the substrate. Some embodiments include methods in which tunnel dielectric material is formed across a semiconductor wafer. Metallic nanoparticles are formed across the tunnel dielectric material. A stack of two or more different materials is formed over the metallic nanoparticles. A portion of the stack is covered with a protective mask while another portion of the stack is left unprotected. The unprotected portion of the stack is removed to expose some of the metallic nanoparticles. The semiconductor wafer to is subjected to etchant suitable to undercut at least some of the exposed metallic nanoparticles, and simultaneously the semiconductor wafer is spun.

Abstract: Some embodiments include methods of removing noble metal-containing particles from over a substrate. The substrate is exposed to a composition that reduces adhesion between the noble metal-containing particles and the substrate, and simultaneously the substrate is spun to sweep at least some of the noble metal-containing particles off from the substrate. Some embodiments include methods in which tunnel dielectric material is formed across a semiconductor wafer. Metallic nanoparticles are formed across the tunnel dielectric material. A stack of two or more different materials is formed over the metallic nanoparticles. A portion of the stack is covered with a protective mask while another portion of the stack is left unprotected. The unprotected portion of the stack is removed to expose some of the metallic nanoparticles. The semiconductor wafer to is subjected to etchant suitable to undercut at least some of the exposed metallic nanoparticles, and simultaneously the semiconductor wafer is spun.

Abstract: Methods include forming a charge storage transistor gate stack over semiconductive material. One such stack includes a tunnel dielectric, charge storage material over the tunnel dielectric, a high-k dielectric over the charge storage material, and conductive control gate material over the high-k dielectric. The stack is etched at least to the tunnel dielectric to form a plurality of charge storage transistor gate lines over the semiconductive material. Individual of the gate lines have laterally projecting feet which include the high-k dielectric. After etching the stack to form the gate lines, ions are implanted into an implant region which includes the high-k dielectric of the laterally projecting feet. The ions are chemically inert to the high-k dielectric. The ion implanted high-k dielectric of the projecting feet is etched selectively relative to portions of the high-k dielectric outside of the implant region.

Abstract: Methods include forming a charge storage transistor gate stack over semiconductive material. One such stack includes a tunnel dielectric, charge storage material over the tunnel dielectric, a high-k dielectric over the charge storage material, and conductive control gate material over the high-k dielectric. The stack is etched at least to the tunnel dielectric to form a plurality of charge storage transistor gate lines over the semiconductive material. Individual of the gate lines have laterally projecting feet which include the high-k dielectric. After etching the stack to form the gate lines, ions are implanted into an implant region which includes the high-k dielectric of the laterally projecting feet. The ions are chemically inert to the high-k dielectric. The ion implanted high-k dielectric of the projecting feet is etched selectively relative to portions of the high-k dielectric outside of the implant region.