Abstract: A method of manufacturing an ion optical device includes printing the ion optical device in a printing direction from a first end to a second end. The ion optical device includes a first end support at the first end, a first set of rods extending from the first end support and formed with a first set of rings, a second set of rods extending from the first end support and formed with a second set of rings, and a second end support at the second end to which the first and second sets of rods extend. Cutting the first and second end supports away from the ion optical device defines a first electrical circuit through the first set of rods and the first set of rings and a second electrical circuit through the second set of rods and the second set of rings that are electrically isolated from each other.

Abstract: Apparatus for measuring wafer support pedestal temperature in a semiconductor wafer processing system. The apparatus measures infrared energy emitted by the bottom of the pedestal via a tube having one end inserted in a bore through the underside of the cathode pedestal base. The distal end of the tube is coupled to a temperature sensor. Both the tube and temperature sensor are fitted with insulating sleeve adapters to suppress unwanted RF signals from coupling to the sensor.