Abstract: The present disclosure is drawn to an amorphous thin metal film coated substrate including a crosslinked polymer substrate and a 10 angstrom nm to 10 ?m amorphous thin metal film applied directly to the crosslinked polymer substrate. The amorphous thin metal film can include from 10 at % to 50 at % of a metalloid, wherein the metalloid is carbon, silicon, boron, or a mixture thereof. The film can also include from 5 at % to 70 at % of a first metal and 5 at % to 70 at % of a second metal. The first and the second metal can be, independently, titanium, vanadium, chromium, iron, cobalt, nickel, zirconium, niobium, molybdenum, ruthenium, rhodium, palladium, hafnium, tantalum, tungsten, osmium, iridium, or platinum. The first metal and the second metal can also be from different periods of the periodic table of elements.

Abstract: An emitter has an electron supply layer and a tunneling layer formed on the electron supply layer. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within in which the tunneling layer is formed. A cathode layer is formed on the tunneling layer to provide a surface for energy emissions of electrons and/or photons. Preferably, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.

Abstract: An emitter has an electron supply layer and a tunneling layer formed on the electron supply layer. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within which the tunneling layer is formed. A cathode layer is formed on the tunneling layer to provide a surface for energy emissions of electrons and/or photons. Preferably, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.