Patents by Inventor Brian E. Roberds
Brian E. Roberds has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7615465Abstract: A method for fabricating a strained silicon film to a silicon on insulation (SOI) wafer. A layer of oxide is deposited onto a wafer that has a stack structure of a first base substrate, a layer of relaxed film and a second layer of strained film. The SOI wafer has a stack structure of a second base substrate and a layer of oxidized film. The SOI wafer is attached to the wafer and is heated at a first temperature. This causes a silicon dioxide (SiO2) dangling bond to form on the second base substrate of the SOI wafer, transferring the strained film from one wafer to the other.Type: GrantFiled: May 8, 2006Date of Patent: November 10, 2009Assignee: Intel CorporationInventors: Brian S. Doyle, Brian E. Roberds
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Patent number: 7485541Abstract: A method for fabricating a strained silicon film to a silicon on insulation (SOI) wafer. A layer of oxide is deposited onto a wafer that has a stack structure of a first base substrate, a layer of relaxed film=and a second layer of strained film. The SOI wafer has a stack structure of a second base substrate and a layer of oxidized film. The SOI wafer is attached to the wafer and is heated at a first temperature. This causes a silicon dioxide (SiO2) dangling bond to form on the second base substrate of the SOI wafer, transferring the strained film from one wafer to the other.Type: GrantFiled: April 13, 2006Date of Patent: February 3, 2009Assignee: Intel CorporationInventors: Brian S. Doyle, Brian E. Roberds
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Patent number: 7067386Abstract: A method for fabricating a strained silicon film to a silicon on insulation (SOI) wafer. A layer of oxide is deposited onto a wafer that has a stack structure of a first base substrate, a layer of relaxed film-and a second layer of strained film. The SOI wafer has a stack structure of a second base substrate and a layer of oxidized film. The SOI wafer is attached to the wafer and is heated at a first temperature. This causes a silicon dioxide (SiO2) dangling bond to form on the second base substrate of the SOI wafer, transferring the strained film from one wafer to the other.Type: GrantFiled: February 6, 2004Date of Patent: June 27, 2006Assignee: Intel CorporationInventors: Brian S. Doyle, Brian E. Roberds
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Patent number: 6908832Abstract: A method for chemically bonding semiconductor wafers and other materials to one another without exposing wafers to wet environments, and a bonding chamber for in situ plasma bonding are disclosed. The in situ plasma bonding chamber allows plasma activation and bonding to occur without disruption of the vacuum level. This precludes rinsing of the surfaces after placement in the chamber, but allows for variations in ultimate pressure, plasma gas species, and backfill gases. The resulting bonded materials are free from macroscopic and microscopic voids. The initial bond is much stronger than conventional bonding techniques, thereby allowing for rougher materials to be bonded to one another. This bonded materials can be used for bond and etchback silicon on insulator, high voltage and current devices, radiation resistant devices, micromachined sensors and actuators, and hybrid semiconductor applications. This technique is not limited to semiconductors.Type: GrantFiled: October 6, 2003Date of Patent: June 21, 2005Assignee: Silicon Genesis CorporationInventors: Sharon N. Farrens, Brian E. Roberds
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Publication number: 20040157402Abstract: A method for fabricating a strained silicon film to a silicon on insulation (SOI) wafer. A layer of oxide is deposited onto a wafer that has a stack structure of a first base substrate, a layer of relaxed film=and a second layer of strained film. The SOI wafer has a stack structure of a second base substrate and a layer of oxidized film. The SOI wafer is attached to the wafer and is heated at a first temperature. This causes a silicon dioxide (SiO2) dangling bond to form on the second base substrate of the SOI wafer, transferring the strained film from one wafer to the other.Type: ApplicationFiled: February 6, 2004Publication date: August 12, 2004Inventors: Brian S. Doyle, Brian E. Roberds
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Publication number: 20040132304Abstract: A method for chemically bonding semiconductor wafers and other materials to one another without exposing wafers to wet environments, and a bonding chamber for in situ plasma bonding are disclosed. The in situ plasma bonding chamber allows plasma activation and bonding to occur without disruption of the vacuum level. This precludes rinsing of the surfaces after placement in the chamber, but allows for variations in ultimate pressure, plasma gas species, and backfill gases. The resulting bonded materials are free from macroscopic and microscopic voids. The initial bond is much stronger than conventional bonding techniques, thereby allowing for rougher materials to be bonded to one another. This bonded materials can be used for bond and etchback silicon on insulator, high voltage and current devices, radiation resistant devices, micromachined sensors and actuators, and hybrid semiconductor applications. This technique is not limited to semiconductors.Type: ApplicationFiled: October 6, 2003Publication date: July 8, 2004Applicant: Silicon Genesis CorporationInventors: Sharon N. Farrens, Brian E. Roberds
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Patent number: 6717213Abstract: A method for fabricating a strained silicon film to a silicon on insulation (SOI) wafer. A layer of oxide is deposited onto a wafer that has a stack structure of a first base substrate, a layer of relaxed film and a second layer of strained film. The SOI wafer has a stack structure of a second base substrate and a layer of oxidized film. The SOI wafer is attached to the wafer and is heated at a first temperature. This causes a silicon dioxide (SiO2) dangling bond to form on the second base substrate of the SOI wafer, transferring the strained film from one wafer to the other.Type: GrantFiled: June 29, 2001Date of Patent: April 6, 2004Assignee: Intel CorporationInventors: Brian S. Doyle, Brian E. Roberds
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Patent number: 6645828Abstract: A method for chemically bonding semiconductor wafers and other materials to one another without exposing wafers to wet environments, and a bonding chamber for in situ plasma bonding are disclosed. The in situ plasma bonding chamber allows plasma activation and bonding to occur without disruption of the vacuum level. This precludes rinsing of the surfaces after placement in the chamber, but allows for variations in ultimate pressure, plasma gas species, and backfill gases. The resulting bonded materials are free from macroscopic and microscopic voids. The initial bond is much stronger than conventional bonding techniques, thereby allowing for rougher materials to be bonded to one another. These bonded materials can be used for bond and etchback silicon on insulator, high voltage and current devices, radiation resistant devices, micromachined sensors and actuators, and hybrid semiconductor applications. This technique is not limited to semiconductors.Type: GrantFiled: September 8, 2000Date of Patent: November 11, 2003Assignee: Silicon Genesis CorporationInventors: Sharon N. Farrens, Brian E. Roberds
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Patent number: 6605498Abstract: A stressed channel is formed in a PMOS transistor by etching a recess and subsequently backfilling the recess with an epitaxially formed alloy of silicon, germanium, and an n-type dopant. The alloy has the same crystal structure as the underlying silicon, but the spacing of the crystal is larger, due to the inclusion of the germanium. An NMOS transistor can be formed by including carbon instead of germanium.Type: GrantFiled: March 29, 2002Date of Patent: August 12, 2003Assignee: Intel CorporationInventors: Anand S. Murthy, Brian S. Doyle, Brian E. Roberds
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Publication number: 20030003679Abstract: A method for fabricating a strained silicon film to a silicon on insulation (SOI) wafer. A layer of oxide is deposited onto a wafer that has a stack structure of a first base substrate, a layer of relaxed film and a second layer of strained film. The SOI wafer has a stack structure of a second base substrate and a layer of oxidized film. The SOI wafer is attached to the wafer and is heated at a first temperature. This causes a silicon dioxide (SiO2) dangling bond to form on the second base substrate of the SOI wafer, transferring the strained film from one wafer to the other.Type: ApplicationFiled: June 29, 2001Publication date: January 2, 2003Inventors: Brian S. Doyle, Brian E. Roberds
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Patent number: 6362078Abstract: A method of making an active device is provided. A conductive line is formed in a substrate of a Metal-Oxide Semiconductor Field Effect Transistor (MOSFET). The conductive line runs alongside a gate of the MOSFET. The gate is coupled to the conductive line.Type: GrantFiled: February 26, 1999Date of Patent: March 26, 2002Assignee: Intel CorporationInventors: Brian S. Doyle, Chunlin Liang, Brian E. Roberds
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Patent number: 6300221Abstract: A method includes forming a spacer mask having a defined edge over a portion of a substrate, and alternatively conformally depositing over a portion of a substrate including the spacer mask a predetermined member of at least a first material and a second material. In one aspect, the first material and the second material have a different etch rate for a predetermined etchant. The method also includes forming a free-standing spacer comprising the first material and the second material having a width equivalent to the thickness of one of a layer of the first material and the second material.Type: GrantFiled: September 30, 1999Date of Patent: October 9, 2001Assignee: Intel CorporationInventors: Brian E. Roberds, Brian S. Doyle, Peng Cheng
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Patent number: 6180496Abstract: A method for chemically bonding semiconductor wafers and other materials to one another without exposing wafers to wet environments, and a bonding chamber for in situ plasma bonding are disclosed. The in situ plasma bonding chamber allows plasma activation and bonding to occur without disruption of the vacuum level. This precludes rinsing of the surfaces after placement in the chamber, but allows for variations in ultimate pressure, plasma gas species, and backfill gases. The resulting bonded materials are free from macroscopic and microscopic voids. The initial bond is much stronger than conventional bonding techniques, thereby allowing for rougher materials to be bonded to one another. These bonded materials can be used for bond and etchback silicon on insulator, high voltage and current devices, radiation resistant devices, micromachined sensors and actuators, and hybrid semiconductor applications. This technique is not limited to semiconductors.Type: GrantFiled: August 28, 1998Date of Patent: January 30, 2001Assignee: Silicon Genesis CorporationInventors: Sharon N. Farrens, Brian E. Roberds
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Patent number: 5503704Abstract: A process for direct bonding similar or dissimilar materials at low temperatures in which a material surface is rendered hydrophilic and reactive by creating nitrogen based radicals on the surface, the surface is direct bonded to a second surface, and the bonded surfaces are annealed at a temperature below approximately 500.degree. C. A nitrogen based constituent is combined with an activator to render the surface hydrophilic and reactive through ammonia plasma activation or activation by use of hydrofluoric acid.Type: GrantFiled: June 8, 1994Date of Patent: April 2, 1996Assignee: The Regents of the University of CaliforniaInventors: Robert W. Bower, Mohd S. Ismail, Brian E. Roberds