Abstract: Apparatuses, components and methods are provided herein useful to provide assistance to customers and/or workers in a shopping facility. In some embodiments, a shopping facility personal assistance system comprises: a plurality of motorized transport units located in and configured to move through a shopping facility space; a plurality of user interface units, each corresponding to a respective motorized transport unit during use of the respective motorized transport unit; and a central computer system having a network interface such that the central computer system wirelessly communicates with one or both of the plurality of motorized transport units and the plurality of user interface units, wherein the central computer system is configured to control movement of the plurality of motorized transport units through the shopping facility space based at least on inputs from the plurality of user interface units.

Abstract: Embodiments in accordance with the present invention relate to heat exchangers, and more specifically to graphitic foam (GF) heat exchanger assemblies developed for a plurality of thermal management applications including the management of heat from electronic components, primary engine cooling and energy recovery. According to certain embodiments, these assemblies are designed using a pressure normal to the GF exchange element to ensure thermal contact without the use of bonding materials or methods. The bondless assembly is designed to be resistant to high thermal stresses and large thermal expansion coefficient differences thereby achieving and maintaining the highest possible thermal performance.

Abstract: The present invention provides a semiconductor device, a method of manufacture therefor, and an integrated circuit including the-same. In one advantageous embodiment the semiconductor device includes a doped layer located over a semiconductor substrate and an isolation trench located in the doped layer. The isolation trench may further include a bottom surface and a sidewall. Additionally, the semiconductor device may include a dopant barrier layer located on the sidewall and a doped region located in the bottom surface.

Abstract: The present invention provides a semiconductor device, a method of manufacture therefor, and an integrated circuit including the same. In one advantageous embodiment, the semiconductor device includes a doped layer located over a semiconductor substrate, and an isolation trench located in the doped layer and having a dielectric layer located on a sidewall thereof. The semiconductor device may further include a conductive material located within the isolation trench and an interconnect that electrically connects the conductive material and the doped layer.

Abstract: A packaged medicinal product comprising a medicinal preparation packaged in a plastic container having a fluorinated barrier layer on a surface of its body wall is disclosed. The fluorinated barrier layer on the surface of container body wall reduces the loss of an ingredient in the medicinal preparation through the container body wall, and reduces the transfer of impurities into the medicinal preparation from the container materials, from label-related materials, or from the environment where the packaged medicinal preparation is stored.

Abstract: A case carries an inhaler holding a canister of medicant. An elastically radially deformable cylindrical sleeve is resiliently expandable to slidably axially receive and grip the inhaler. An elastically lengthwise deformable strap stretches diametrically across the sleeve to secure the canister against inadvertent release from the inhaler. A spring clip is connected to the sleeve by a loop for attaching and detaching the case to and from an external object such as a belt loop, fence wire, storage ring or the like. An aperture in the sleeve exposes a portion of the inhaler to display indices, such as the user's initials, uniform number or the like, suitable to distinguish any given inhaler from similar inhalers.

Abstract: The present invention provides a semiconductor device, a method of manufacture therefor, and an integrated circuit including the same. In one advantageous embodiment the semiconductor device includes a doped layer located over a semiconductor substrate and an isolation trench located in the doped layer. The isolation trench may further include a bottom surface and a sidewall. Additionally, the semiconductor device may include a dopant barrier layer located on the sidewall and a doped region located in the bottom surface.

Abstract: The present invention provides a semiconductor device, a method of manufacture therefor, and an integrated circuit including the same. In one advantageous embodiment, the semiconductor device includes a doped layer located over a semiconductor substrate, and an isolation trench located in the doped layer and having a dielectric layer located on a sidewall thereof. The semiconductor device may further include a conductive material located within the isolation trench and an interconnect that electrically connects the conductive material and the doped layer.

Abstract: A pair of steam turbine inlet ports are disposed at opposite sides of a steam turbine housing for flowing steam in opposite circumferential directions in a generally annular steam chamber to first stages of a turbine through axially opposite outlets. Portions of the chamber in the upper and lower housing have decreasing cross-sections in a generally circumferential direction away from the steam inlet portions to provide a substantially uniform flow of steam about the chamber in a generally radially inward direction and about and through the axial outlets.

Abstract: The present invention provides a method of manufacturing a semiconductor device. The method may include forming first and second adjacent tubs in an epitaxial layer, and simultaneously forming a base region in the first tub and lightly doped drain (LDD) regions in the second tub adjacent a first gate located over the second tub. The method may also include simultaneously forming a base contact region and a source/drain contact region.

Abstract: A pair of steam turbine inlet ports are disposed at opposite sides of a steam turbine housing for flowing steam in opposite circumferential directions in a generally annular steam chamber to first stages of a turbine through axially opposite outlets. Portions of the chamber in the upper and lower housing have decreasing cross-sections in a generally circumferential direction away from the steam inlet portions to provide a substantially uniform flow of steam about the chamber in a generally radially inward direction and about and through the axial outlets.

Abstract: An endotracheal tube for artificial ventilation employs a primary cuff and a secondary cuff for locating and positioning the tube in the trachea of a patient. The secondary cuff employs a balloon sleeve which is located in close proximity to the distal end of the tube. The secondary balloon sleeve is sealed against the tube in a reverse folded configuration. The tube wall includes a number of lumens which may be employed for various auxiliary functions.