Patents by Inventor Brian Gawlik

Brian Gawlik has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10816482
    Abstract: The present disclosure regards a large area functional metrology system for inspecting nanophotonic devices. The large area functional metrology system can include one or more light sources, optical components such as lenses and polarizers, and one or more camera sensors. The light source can irradiate light onto a nanophotonic device while the optical components can guide the light through the system and modulate states of the light. The camera sensor can record images of the nanophotonic device interacting with the irradiated light. The images can be taken as a function of one or more states. The system can also include a detector which can processes the images in order to detect defects. The defects can then be classified using one or more defect signatures. Based on this classification, the root causes of the defects can be automatically identified.
    Type: Grant
    Filed: October 26, 2017
    Date of Patent: October 27, 2020
    Assignee: Board of Regents, The University of Texas System
    Inventors: S. V. Sreenivasan, Brian Gawlik, Shrawan Singhal
  • Publication number: 20190250107
    Abstract: The present disclosure regards a large area functional metrology system for inspecting nanophotonic devices. The large area functional metrology system can include one or more light sources, optical components such as lenses and polarizers, and one or more camera sensors. The light source can irradiate light onto a nanophotonic device while the optical components can guide the light through the system and modulate states of the light. The camera sensor can record images of the nanophotonic device interacting with the irradiated light. The images can be taken as a function of one or more states. The system can also include a detector which can processes the images in order to detect defects. The defects can then be classified using one or more defect signatures. Based on this classification, the root causes of the defects can be automatically identified.
    Type: Application
    Filed: October 26, 2017
    Publication date: August 15, 2019
    Applicant: Board of Regents, The University Of Texas System
    Inventors: S. V. Sreenivasan, Brian Gawlik, Shrawan Singhal
  • Patent number: 10026609
    Abstract: A method for template fabrication of ultra-precise nanoscale shapes. Structures with a smooth shape (e.g., circular cross-section pillars) are formed on a substrate using electron beam lithography. The structures are subject to an atomic layer deposition of a dielectric interleaved with a deposition of a conductive film leading to nanoscale sharp shapes with features that exceed electron beam resolution capability of sub-10 nm resolution. A resist imprint of the nanoscale sharp shapes is performed using J-FIL. The nanoscale sharp shapes are etched into underlying functional films on the substrate forming a nansohaped template with nanoscale sharp shapes that include sharp corners and/or ultra-small gaps. In this manner, sharp shapes can be retained at the nanoscale level. Furthermore, in this manner, imprint based shape control for novel shapes beyond elementary nanoscale structures, such as dots and lines, can occur at the nanoscale level.
    Type: Grant
    Filed: October 23, 2015
    Date of Patent: July 17, 2018
    Assignee: Board of Regents, The University of Texas System
    Inventors: Sidlgata V. Sreenivasan, Anshuman Cherala, Meghali Chopra, Roger Bonnecaze, Ovadia Abed, Bailey Yin, Akhila Mallavarapu, Shrawan Singhal, Brian Gawlik
  • Publication number: 20160118249
    Abstract: A method for template fabrication of ultra-precise nanoscale shapes. Structures with a smooth shape (e.g., circular cross-section pillars) are formed on a substrate using electron beam lithography. The structures are subject to an atomic layer deposition of a dielectric interleaved with a deposition of a conductive film leading to nanoscale sharp shapes with features that exceed electron beam resolution capability of sub-10 nm resolution. A resist imprint of the nanoscale sharp shapes is performed using J-FIL. The nanoscale sharp shapes are etched into underlying functional films on the substrate forming a nansohaped template with nanoscale sharp shapes that include sharp corners and/or ultra-small gaps. In this manner, sharp shapes can be retained at the nanoscale level. Furthermore, in this manner, imprint based shape control for novel shapes beyond elementary nanoscale structures, such as dots and lines, can occur at the nanoscale level.
    Type: Application
    Filed: October 23, 2015
    Publication date: April 28, 2016
    Inventors: Sidlgata V. Sreenivasan, Anshuman Cherala, Meghali Chopra, Roger Bonnecaze, Ovadia Abed, Bailey Yin, Akhila Mallavarapu, Shrawan Singhal, Brian Gawlik