Abstract: A rotating machine system include a rotating machine. The rotating machine system can include a housing. The housing can include an inner surface. The housing can surround at least a portion of the rotating machine. The inner surface of the housing can be spaced from the rotating machine such that a space is defined therebetween. The rotating machine system can include a plurality of vibration isolators. The vibration isolators can be positioned in the space and can be operatively connected to the rotating machine and to the inner surface of the housing. The vibration isolators can be compression-type vibration isolators.

Abstract: Processes for the purification of silicon carbide structures, including silicon carbide coated silicon carbide structures, are disclosed. The processes described can reduce the amount of iron contamination in a silicon carbide structure by 100 to 1000 times. After purification, the silicon carbide structures are suitable for use in high temperature silicon wafer processing.

Abstract: Processes for the purification of silicon carbide structures, including silicon carbide coated silicon carbide structures, are disclosed. The processes described can reduce the amount of iron contamination in a silicon carbide structure by 100 to 1000 times. After purification, the silicon carbide structures are suitable for use in high temperature silicon wafer processing.

Abstract: A process for removing a contaminant selected from among copper, nickel, and a combination thereof from a silicon wafer having a surface and an interior. The process comprises cooling the silicon wafer in a controlled atmosphere from a temperature at or above an oxidation initiation temperature and initiating a flow of an oxygen-containing atmosphere at said oxidation initiation temperature to create an oxidizing ambient around the silicon wafer surface to form an oxide layer on the silicon wafer surface and a strain layer at an interface between the oxide layer and the silicon wafer interior. The cooling of the wafer is also controlled to permit diffusion of atoms of the contaminant from the silicon wafer interior to the strain layer. Then the silicon wafer is then cleaned to remove the oxide layer and the strain layer, thereby removing said contaminant having diffused to the strain layer.