Abstract: The present invention provides a quantum dot light emitting diode comprising i) an emitting layer of at least one semiconductor nanoparticle made from semiconductor materials selected from the group consisting of Group II-VI compounds, Group II-V compounds, Group III-VI compounds, Group III-V compounds, Group IV-VI compounds, Group I-III-VI compounds, Group II-IV-VI compounds, Group II-IV-V compounds, or any combination thereof; and ii) a polymer for hole injection or hole transport layer, comprising one or more triaryl aminium radical cations having the structure (S1).

Abstract: The present invention provides a quantum dot light emitting diode comprising i) an emitting layer of at least one semiconductor nanoparticle made from semiconductor materials selected from the group consisting of Group II-VI compounds, Group II-V compounds, Group III-VI compounds, Group III-V compounds, Group IV-VI compounds, Group I-III-VI compounds, Group II-IV-VI compounds, Group II-IV-V compounds, or any combination thereof; and ii) a polymer for hole injection or hole transport layer; and the polymer comprises, as polymerized units, at least one or more monomers having a first monomer structure comprising a) a polymerizable group, b) an electroactive group with formula NAr1Ar2Ar3 wherein Ar1, Ar2 and Ar3 independently are C6-C50 aromatic substituents, and (c) a linker group connecting the polymerizable group and the electroactive group.

Abstract: Provided is an organic light-emitting diode comprising a substrate, an anode layer, optionally one or more hole injection layers, one or more hole transport layers, optionally one or more electron blocking layers, an emitting layer, optionally one or more hole blocking layers, optionally one or more electron transport layers, an electron injection layer, and a cathode, wherein either the hole injection layer, or the hole transport layer, or both of the hole injection layer and the hole transport layer, or a layer that functions as both a hole injection layer and a hole transport layer, comprises a polymer that comprises one or more triaryl aminium radical cations having the structure (S1) wherein each of R11, R12, R13, R14, R15, R21, R22, R23, R24, R25, R31, R32, R33, R34, and R35 is independently selected from the group consisting of hydrogen, deuterium halogens, amine groups, hydroxyl groups, sulfonate groups, nitro groups, and organic groups, wherein two or more of R11, R12, R13, R14, R15, R21, R22, R23, R

Abstract: The present invention provides a quantum dot light emitting diode comprising i) an emitting layer of at least one semiconductor nanoparticle made from semiconductor materials selected from the group consisting of Group II-VI compounds, Group II-V compounds, Group III-VI compounds, Group III-V compounds, Group IV-VI compounds, Group I-III-VI compounds, Group II-IV-VI compounds, Group II-IV-V compounds, or any combination thereof; and ii) a polymer for hole injection or hole transport layer, comprising one or more triaryl aminium radical cations having the structure (S1).

Abstract: The present invention provides a quantum dot light emitting diode comprising i) an emitting layer of at least one semiconductor nanoparticle made from semiconductor materials selected from the group consisting of Group II-VI compounds, Group II-V compounds, Group III-VI compounds, Group III-V compounds, Group IV-VI compounds, Group I-III-VI compounds, Group II-IV-VI compounds, Group II-IV-V compounds, or any combination thereof; and ii) a polymer for hole injection or hole transport layer; and the polymer comprises, as polymerized units, at least one or more monomers having a first monomer structure comprising a) a polymerizable group, b) an electroactive group with formula NAr1Ar2Ar3 wherein Ar1, Ar2 and Ar3 independently are C6-C50 aromatic substituents, and (c) a linker group connecting the polymerizable group and the electroactive group.

Abstract: Provided is an organic light-emitting diode comprising a substrate, an anode layer, optionally one or more hole injection layers, one or more hole transport layers, optionally one or more electron blocking layers, an emitting layer, optionally one or more hole blocking layers, optionally one or more electron transport layers, an electron injection layer, and a cathode, wherein either the hole injection layer, or the hole transport layer, or both of the hole injection layer and the hole transport layer, or layer that functions as both a hole injection layer and a hole transport layer, comprises a polymer that comprises one or more triaryl aminium radical cations having the structure (S1) wherein each of R11, R12, R13, R14, R15, R21, R22, R23, R24, R25, R31, R32, R33, R34, and R35 is independently selected from the group consisting of hydrogen, deuterium halogens, amine groups, hydroxyl groups, sulfonate groups, nitro groups, and organic groups, wherein two or more of R11, R12, R13, R14, R15, R21, R22, R23, R24

Abstract: The present disclosure relates to photovoltaic devices that include a chalcogenide-containing photovoltaic light-absorber having a composition profile defined by at least a first region, a second region, and a third region. The second region is located between the first region and the third region. Each region of the chalcogenide-containing photovoltaic light-absorber includes Cu, In, Ga, Al, and at least one chalcogen. The concentration of Al present in the second region is less than the concentration of Al present in each of the first region and third region. Methods of making such chalcogenide-containing photovoltaic light-absorbers are also disclosed.