Abstract: An apparatus for growing a crystalline sheet from a melt includes a cold block assembly. The cold block assembly may include a cold block and a shield surrounding the cold block and being at an elevated temperature with respect to that of the cold block, the shield defining an opening disposed along a surface of the cold block proximate a melt surface that defines a cold area comprising a width along a first direction of the cold block, the cold area operable to provide localized cooling of a region of the melt surface proximate the cold block. The apparatus may further include a crystal puller arranged to draw a crystalline seed in a direction perpendicular to the first direction when the cold block assembly is disposed proximate the melt surface.

Abstract: An apparatus for growing a crystalline sheet from a melt includes a cold block assembly. The cold block assembly may include a cold block and a shield surrounding the cold block and being at an elevated temperature with respect to that of the cold block, the shield defining an opening disposed along a surface of the cold block proximate a melt surface that defines a cold area comprising a width along a first direction of the cold block, the cold area operable to provide localized cooling of a region of the melt surface proximate the cold block. The apparatus may further include a crystal puller arranged to draw a crystalline seed in a direction perpendicular to the first direction when the cold block assembly is disposed proximate the melt surface.

Abstract: An apparatus for growing a crystalline sheet from a melt includes a cold block assembly. The cold block assembly may include a cold block and a shield surrounding the cold block and being at an elevated temperature with respect to that of the cold block, the shield defining an opening disposed along a surface of the cold block proximate a melt surface that defines a cold area comprising a width along a first direction of the cold block, the cold area operable to provide localized cooling of a region of the melt surface proximate the cold block. The apparatus may further include a crystal puller arranged to draw a crystalline seed in a direction perpendicular to the first direction when the cold block assembly is disposed proximate the melt surface.

Abstract: A method of horizontal ribbon growth from a melt of material includes forming a leading edge of the ribbon using radiative cooling, drawing the ribbon in a first direction along a surface of the melt, removing heat radiated from the melt in a region adjacent the leading edge of the ribbon by setting a temperature Tc of a cold plate proximate a surface of the melt at a value that is greater than 50° C. below a melting temperature Tm of the material, setting a temperature at a bottom of the melt at a value that is between 1° C. and 3° C. greater than the Tm, and providing the heat flow through the melt at a heat flow rate that is above that of an instability regime characterized by segregation of solutes during crystallization of the melt, and is below a heat flow rate for stable isotropic crystal growth.

Abstract: A method of horizontal ribbon growth from a melt includes forming a leading edge of the ribbon using radiative cooling on a surface of the melt, drawing the ribbon in a first direction along the surface of the melt, and removing heat radiated from the melt in a region adjacent the leading edge of the ribbon at a heat removal rate that is greater than a heat flow through the melt into the ribbon.

Abstract: An apparatus for growing a crystalline sheet from a melt includes a cold block assembly. The cold block assembly may include a cold block and a shield surrounding the cold block and being at an elevated temperature with respect to that of the cold block, the shield defining an opening disposed along a surface of the cold block proximate a melt surface that defines a cold area comprising a width along a first direction of the cold block, the cold area operable to provide localized cooling of a region of the melt surface proximate the cold block. The apparatus may further include a crystal puller arranged to draw a crystalline seed in a direction perpendicular to the first direction when the cold block assembly is disposed proximate the melt surface.

Abstract: Apparatus for use in edge etching a plurality of flat semiconductor wafers comprises a carousel releasably holding a plurality of carriers that are adapted to support a horizontal stack of wafers at selected points along the edges of the wafers. The carousel is adapted to be releasably attached to a dual axis rotary drive mechanism in a reaction chamber containing a plasma jet stream generator. The drive mechanism is operated to cause axis rotation of the carriers over the plasma jet stream, with selected edges of the wafers being directly exposed to and etched by the plasma. The etching process is interrupted to permit the carriers to be removed from the carousel for reorientation of the wafers. Thereafter, the etching process is resumed, whereby other edges of the wafers are subjected to etching by the plasma jet stream.

Abstract: An improved mechanical arrangement controls the introduction of silicon particles into an EFG (Edge-defined Film-fed Growth) crucible/die unit for melt replenishment during a crystal growth run. A feeder unit injects silicon particles upwardly through a center hub of the crucible/die unit and the mechanical arrangement intercepts the injected particles and directs them so that they drop into the melt in a selected region of the crucible and at velocity which reduces splashing, whereby to reduce the likelihood of interruption of the growth process due to formation of a solid mass of silicon on the center hub and adjoining components. The invention also comprises use of a Faraday ring to alter the ratio of the electrical currents flowing through primary and secondary induction heating coils that heat the crucible die unit and the mechanical arrangement.

Abstract: An improved mechanical arrangement controls the introduction of silicon particles into an EFG (Edge-defined Film-fed Growth) crucible/die unit for melt replenishment during a crystal growth run. A feeder unit injects silicon particles upwardly through a center hub of the crucible/die unit and the mechanical arrangement intercepts the injected particles and directs them so that they drop into the melt in a selected region of the crucible and at velocity which reduces splashing, whereby to reduce the likelihood of interruption of the growth process due to formation of a solid mass of silicon on the center hub and adjoining components. The invention also comprises use of a Faraday ring to alter the ratio of the electrical currents flowing through primary and secondary induction heating coils that heat the crucible die unit and the mechanical arrangement.

Abstract: A novel capillary die and crystal growing method are provided for growing a hollow crystalline body by EFG. Inner and outer annular moats surround the die tip. Passageways are provided for supplying melt to those moats from a crucible, so that melt in said moats will wet and cover the inner and outer exterior surfaces of the die tip during growth of a hollow crystalline body. The novel die may be constructed so as to have a lower die tip and a shorter capillary than EFG dies heretofore used to successfully grow hollow bodies. The die design facilitates keeping the temperature of the die tip substantially uniform about its circumference, thereby improving the uniformity of thickness of the wall of the crystalline body grown from a film of melt on the die tip. The moats reduce the likelihood of the growth process being interrupted or adversely affected by flooding of the die.

Abstract: A control system for controlling the operation of a system for replenishing the melt in the crucible of an apparatus for growing tubular crystalline bodies of a selected material. The melt replenishment system comprises a container for storing solid particles of said selected material and a dispenser for transporting the particles from the container to the crucible. The control system controls the rate at which the dispenser transports particles from the container to the crucible based on the weight of the solid particles stored in the container, the weight of the crystalline body, and the pressure inside the crystalline body. Additionally, the control system may be adapted to control the temperature of the crucible heater of the apparatus. Compensation is provided by this invention for weight measurement errors that are created by pressure fluctuations within the tubular crystalline body.

Abstract: A novel capillary die and crystal growing method are provided for growing a hollow crystalline body by EFG. Inner and outer annular moats surround the die tip. Passageways are provided for supplying melt to those moats from a crucible, so that melt in said moats will wet and cover the inner and outer exterior surfaces of the die tip during growth of a hollow crystalline body. The novel die may be constructed so as to have a lower die tip and a shorter capillary than EFG dies heretofore used to successfully grow hollow bodies. The die design facilitates keeping the temperature of the die tip substantially uniform about its circumference, thereby improving the uniformity of thickness of the wall of the crystalline body grown from a film of melt on the die tip. The moats reduce the likelihood of the growth process being interrupted or adversely affected by flooding of the die.

Abstract: A control system for controlling the operation of an apparatus for growing tubular crystalline bodies. The control system comprises a weight sensor for measuring the weight of the crystal, a length sensor for measuring the length of the crystal, a pressure sensor for measuring the pressure inside the crystal, and a controller coupled to the weight, length and pressure sensors for controlling the operation of the crystal growing apparatus. The controller is coupled to the die heater of the apparatus for controlling the temperature of melt contained in the crucible of the apparatus based on the outputs of the weight, length and pressure sensors. To ensure the wall of the tubular crystalline body is maintained at a substantially uniform thickness, precise measurement of the weight of the body must be made. Compensation is provided by this invention for weight measurement errors that are created by pressure fluctations within the tubular crystalline body.

Abstract: An improved furnace is provided for growing crystalline bodies from a melt. The improved furnace is characterized by a door assembly which is remotely controlled and is arranged so as to selectively shut off or permit communication between an access port in the furnace enclosure and a hot zone within that enclosure. The invention is especially adapted to facilitate use of crystal growing cartridges of the type disclosed in U.S. Pat. No. 4,118,197.

Abstract: A novel cartridge containing selected crystal growth components is provided for use in a crystal growing system. The cartridge is adapted to be mounted directly to a crystal pulling mechanism and is arranged so that it can be inserted into a furnace containing a supply of molten feed material. The cartridge includes a crystal growing die, a die holder, and associated crystal growth components arranged to permit rapid growth of selected shape. The cartridge is assembled outside of the furnace at room temperature and can be inserted into and removed from the furnace without having to cool the latter.

Abstract: A control system for controlling the operation of an apparatus for growing tubular crystalline bodies. The control system comprises a weight sensor for measuring the weight of the crystal, a length sensor for measuring the length of the crystal, a pressure sensor for measuring the pressure inside the crystal, and a controller coupled to the weight, length and pressure sensors for controlling the operation of the crystal growing apparatus. The controller is coupled to the die heater of the apparatus for controlling the temperature of melt contained in the crucible of the apparatus based on the outputs of the weight, length and pressure sensors. To ensure the wall of the tubular crystalline body is maintained at a substantially uniform thickness, precise measurement of the weight of the body must be made. Compensation is provided by this invention for weight measurement errors that are created by pressure fluctuations within the tubular crystalline body.